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| BAS 125W Silicon Schottky Diodes Preliminary data * For low-loss, fast-recovery, meter protection, bias isolation and clamping application * Integrated diffused guard ring * Low forward voltage BAS 125-04W BAS 125-04W BAS 125-06W ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Marking Ordering Code Pin Configuration Type BAS 125-04W BAS 125-05W BAS 125-06W BAS 125W Parameter Diode reverse voltage Forward current Surge forward current (t 10ms) Total Power dissipation 14s 15s 16s 13s Q62702Q62702Q62702Q627021 = A1 1 = A1 1 = C1 1=A Symbol 2 = C2 2 = A2 2 = C2 Package 3=C1/A2 SOT-323 3=C1/C2 SOT-323 3=A1/A2 SOT-323 3=C Values 25 100 500 mW 250 150 - 55 ... + 150 310 425 230 265 C SOT-323 Unit V mA Maximum Ratings VR IF IFSM Ptot Tj Tstg 1) 1) TS 25 C Junction temperature Storage temperature Thermal Resistance Junction ambient, BAS125W RthJA RthJA RthJS RthJS K/W Junction ambient, BAS 125-04W...06W Junction - soldering point, BAS125W Junction - soldering point, BAS125-04W...06W 1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm Semiconductor Group 1 Dec-20-1996 BAS 125W Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 385 530 800 150 200 nA VR = 20 V VR = 25 V Forward voltage VF 400 650 900 mV IF = 1 mA IF = 10 mA IF = 35 mA AC Characteristics Diode capacitance CT 16 1.1 pF - VR = 0 V, f = 1 MHz Differential forward resistance RF IF = 5 mA, f = 10 kHz Semiconductor Group 2 Dec-20-1996 BAS 125W Forward current IF = f (TA*;TS) * Package mounted on epoxy BAS 125W 100 mA IF 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 TS TA 120 C 150 TA ,TS Permissible Pulse Load RTHJS = f(tp) BAS 125W 10 3 Permissible Pulse Load IFmax/IFDC = f(tp) BAS 125W 10 2 K/W RthJS 10 2 IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 3 Dec-20-1996 BAS 125W Forward current IF = f (TA*;TS) * Package mounted on epoxy BAS 125-04W... (IF per diode) 100 mA IF 80 TS 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 C 150 TA ,TS TA Permissible Pulse Load RTHJS = f(tp) BAS 125-04W... 10 3 Permissible Pulse Load IFmax/IFDC = f(tp) BAS 125-04W... 10 2 K/W RthJS 10 2 IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 4 Dec-20-1996 BAS 125W Forward Current IF = f(VF) Diode capacitance CT = f (VR) f = 1MHz Reverse current IR = f (VR) TA = Parameter Differential forward resistance RF = f(IF) f = 10kHz Semiconductor Group 5 Dec-20-1996 |
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