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 BFS 17P
NPN Silicon RF Transistor
* For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA * CECC-type available: CECC 50002/248.
Type BFS 17P
Marking Ordering Code MCs Q62702-F940
Pin Configuration 1=B 2=E 3=C
Package SOT-23
Maximum Ratings of any single Transistor Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Symbol Values 15 25 2.5 25 50 mA Unit V
VCEO VCBO VEBO IC ICM Ptot
f 10 MHz
Total power dissipation
mW 280 150 - 65 + 150 - 65 ... + 150 340 C
TS 55 C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
1)
Tj TA Tstg RthJS
K/W
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm
Semiconductor Group
1
Aug-02-1996
BFS 17P
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics of any single Transistor Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
15 70 0.1 -
V A 0.05 10 100 20 20 150 V 0.4
IC = 1 mA, IB = 0
Collector-base cutoff current
ICBO
VCB = 10 V, IE = 0 VCB = 25 V, IE = 0
Emitter-base cutoff current
IEBO
-
VEB = 2.5 V, IC = 0
DC current gain
hFE
IC = 2 mA, VCE = 1 V IC = 25 mA, VCE = 1 V
Collector-emitter saturation voltage
VCEsat
IC = 10 mA, IB = 1 mA
Semiconductor Group
2
Aug-02-1996
BFS 17P
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics of any single Transistor Transition frequency Values typ. max. Unit
fT
1 1.3 1.4 2.5 0.55 0.25 1.45 -
GHz
IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz
Collector-base capacitance
Ccb
0.8 1.5
pF
VCB = 5 V, VBE = vbe = 0 , f = 1 MHz
Collector-emitter capacitance
Cce
-
VCE = 5 V, VBE = vbe = 0 , f = 1 MHz
Input capacitance
Cibo
-
VEB = 0.5 V, IC = 0 , f = 1 MHz
Output capacitance
Cobs
-
VCE = 5 V, VBE = vbe = 0 , f = 1 MHz
Noise figure
F
|S21e|2 12.7 3.5 5
dB
IC = 2 mA, VCE = 5 V, f = 800 MHz ZS = 0
Transducer gain
IC = 20 mA, VCE = 5 V, f = 500 MHz ZS =ZL= 50
Linear output voltage
V01=V02
100 -
mV
IC = 14 mA, VCE = 5 V, dim = 60 dB f1 = 806 MHz, f2 = 810 MHz, ZS =ZL= 50
Third order intercept point
IP3
23 -
dBm
IC = 14 mA, VCE = 5 V, f = 800 MHz ZS = ZSopt, ZL = ZLopt
Semiconductor Group
3
Aug-02-1996
BFS 17P
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
300
mW
Ptot TS
200
150
TA
100
50
0 0 20 40 60 80 100 120 C 150 TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
10 3
K/W -
RthJS
10 2
P totmax/PtotDC
10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 0
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
Semiconductor Group
4
Aug-02-1996
BFS 17P
Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC) f = 500MHz
VCE = Parameter
1.3 pF 1.1
3.0
GHz
Ccb
1.0 0.9 0.8 0.7
fT
2.0
10V 5V 3V
2V 1.5
0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 4 8 12 16 20 V 26 V CB 0.0 0 5 10 15 20 mA IC 30 0.5 1V 0.7V 1.0
Package
Semiconductor Group
5
Aug-02-1996


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