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 Data Sheet No.PD60145-K
IPS021L
FULLY PROTECTED POWER MOSFET SWITCH
Features
* * * * *
Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection
Product Summary Rds(on) V clamp Ishutdown Ton/Toff 150m (max) 50V 5A 1.5s
Description
The IPS021L is a fully protected three terminal SMART POWER MOSFET that features over-current, overtemperature, ESD protection and drain to source active clamp.This device combines a HEXFET(R) POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 5A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
Package
3 Lead SOT223
Typical Connection
Load
R in series (if needed)
Q
D IN control
S
S Logic signal
(Refer to lead assignment for correct pin configuration)
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IPS021L
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 m copper thickness..
Symbol Parameter
Vds Vin Iin, max Isd cont. Maximum drain to source voltage Maximum Input voltage Maximum IN current Diode max. continuous current (1) (rth=125oC/W) Isd pulsed Diode max. pulsed current (1) (1) P d ESD1 ESD2 T stor. Tj max.
Min.
-- -0.3 -10 -- -- -- -- -- -55 -40
Max.
47 7 +10 1.4 10 1 4 0.5 150 +150
Units
V mA
Test Conditions
A
Maximum power dissipation (rth=125oC/W) Electrostatic discharge voltage (Human Body) Electrostatic discharge voltage (Machine Model) Max. storage temperature Max. junction temperature
W C=100pF, R=1500, kV
o
C=200pF, R=0, L=10H
C
Thermal Characteristics
Symbol Parameter
Rth1 Rth2 Thermal resistance with standard footprint Thermal resistance with 1" square footprint
Min.
-- --
Typ.
100 50
Max. Units Test Conditions
-- --
o
C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Continuous drain to source voltage High level input voltage Low level input voltage Continuous drain current Tamb=85 o C ( TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC) Rin Recommended resistor in series with IN pin Tr-in (max) Max recommended rise time for IN signal (see fig. 2) Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) Vds (max) VIH VIL I ds
Min.
-- 4 0 -- 0.5 -- 0
Max.
35 6 0.5 1.4 5 1 1
Units
V
A k S kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Appl. notes.
2
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IPS021L
Static Electrical Characteristics
Standard footprint 70 m copper thickness. Tj = 25oC, (unless otherwise specified).
Symbol Parameter
ON state resistance Tj = 25oC Tj = 150oC Idss 1 Drain to source leakage current Idss 2 Drain to source leakage current V clamp 1 Drain to source clamp voltage 1 V clamp 2 Drain to source clamp voltage 2 Vin clamp IN to source clamp voltage Vth IN threshold voltage Iin, -on ON state IN positive current Iin, -off OFF state IN positive current Rds(on)
Min.
100 -- 0 0 48 50 7 1 25 50
Typ.
130 220 0.01 0.1 54 56 8 1.5 90 130
Max. Units Test Conditions
150 280 25 50 56 60 9.5 2 200 250 m A Vin = 5V, Ids = 1A Vcc = 14V, Tj = 25oC Vcc = 40V, Tj = 25oC Id = 20mA (see Fig.3 & 4) Id=Ishutdown (see Fig.3 & 4) Iin = 1 mA Id = 50mA, Vds = 14V Vin = 5V Vin = 5V
over-current triggered
V
A
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 10, Rinput = 50, 100s pulse, Tj = 25oC, (unless otherwise specified).
Symbol Parameter
Ton Tr Trf Toff Tf Qin Turn-on delay time Rise time Time to 130% final Rds(on) Turn-off delay time Fall time Total gate charge
Min.
0.15 0.4 2 0.8 0.5 --
Typ. Max. Units Test Conditions
0.5 0.9 6 2 1.3 30 1 2 12 3.5 2.5 -- See figure 2 s See figure 2 nC Vin = 5V
Protection Characteristics
Symbol Parameter
T sd I sd V reset Treset EOI_OT Over temperature threshold Over current threshold IN protection reset threshold Time to reset protection Short circuit energy (see application note)
Min.
-- 4 1.5 2 --
Typ.
165 5.5 2.3 10 400
Max. Units Test Conditions
-- 7 3 40 -- C A V s J
o
See fig. 1 See fig. 1 V in = 0V, Tj = 25oC Vcc = 14V
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IPS021L
Functional Block Diagram
All values are typical
DRAIN
47 V
1000 200 k
IN
8.1 V 80 A
S R
Q Q I sense T > 165c
I > Isd
SOURCE
Lead Assignments
(2) D
1 In
2 D
3 S
4
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IPS021L
Vin
5V 0V
Vin 10 %
t < T reset I shutdown t > T reset
90 %
Tr-in
Ids
Isd
90 %
Ids
10 %
Td on tr
Td off tf
T
Tsd
(165 c)
T shutdown
Vds
Figure 1 - Timing diagram
Figure 2 - IN rise time & switching time definitions
T clamp
Vin L
Rem : V load is negative during demagnetization V load +
Ids
Vds clamp
R D
14 V -
Vin Vds
( Vcc ) 5v 0v ( see Appl . Notes to evaluate power dissipation )
IN S
Vds Ids
Figure 3 - Active clamp waveforms
Figure 4 - Active clamp test circuit
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IPS021L
All curves are typical values with standard footprints. Operating in the shaded area is not recommended.
300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8
Tj = 25oC Tj = 150 C
o
200% 180% 160% 140% 120% 100% 80% 60% 40% 20% 0% -50 -25 0 25 50 75 100 125 150 175
Figure 5 - Rds ON (m) Vs Input Voltage (V)
Figure 6 - Normalised Rds(on) (%) Vs Tj (oC)
10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4
ton de lay ris e tim e 130% rds on
4
toff delay fall tim e
3
2
1
5
6
7
8
0 0 1 2 3 4 5 6 7 8
Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs Input Voltage (V)
Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V)
6
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IPS021L
100
100
delay on rise tim e 130% rdson
10 10
delay off fall tim e
1
1
0 .1 10 100 1000 10000
0 .1 10 100 1000 10000
Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs IN Resistor ()
Figure 10 - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor ()
8
6 5
6 4 4 3 2 2 Isd 25C 0 0 1 2 3 4 5 Ilim 25C 0 6 7 8 -50 -25 0 25 50 75 100 125 150 1
Figure 11 - Current Iim. & I shutdown (A) Vs Vin (V)
Figure 12 - I shutdown (A) Vs Temperature (oC)
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IPS021L
5 4 3
100
1" footprint
55C/W
T=25C Std. footprint T=100C Std footprint
Current path capability should be above this curve
std. footprint 100C/W
10
2 1 0 -50
Load characteristic should be below this curve
1
0
50
100
150
200
Figure 14 - Ids (A) Vs Protection Resp. Time (s)
Figure 13 - Max.Cont. Ids (A) Vs Amb. Temperature (oC)
10
s ingle puls e 100 Hz rth=100C/W dT=25C 1k Hz rth=100C/W dT=25C
100
10
1
1
Single pulse 0 .1
Vbat = 14 V Tjini = T sd all curves for 1 mosfet active
0 .0 1
0.1
0 .0 1 0 .1 1 10 100
Figure 15 - I clamp (A) Vs Inductive Load (mH)
Figure 16 - Transient Thermal Imped. (oC/W) Vs Time (s)
8
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IPS021L
200 180 160 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 Iin,on Iin,off
16 14 12 10 8 6 4 2 0 -50
Treset rise tim e fall tim e
-25
0
25
50
75
100 125 150
Figure 17 - Input Current (uA) Vs Junction Temperature (oC)
Figure 18 - Rise Time, Fall Time and Treset (s) Vs Tj (oC)
120% 115% 110% 105% 100% 95% 90% 85% 80% -50 -25 0 25 50 75 100 125 150 Vds clamp @ Isd Vin clamp @ 10mA
Figure 19 -Vin clamp and Vds clamp Vs Tj (oC)
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IPS021L
Case Outline
3-Lead SOT-223
01-6029 01-0022 05 (TO-261AA)
10
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IPS021L
Tape & Reel - SOT223
01-0028 05 / 01-0008 02
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 6/11/2001
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