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PD - 9.1356D IRF7416 HEXFET(R) Power MOSFET Generation V Technology Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S S S G 1 8 7 A D D D D 2 VDSS = -30V 3 6 4 5 RDS(on) = 0.02 T op V ie w Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS EAS dv/dt TJ,TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ - 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -10 -7.1 -45 2.5 0.02 20 370 -5.0 -55 to + 150 Units A W mW/C V mJ V/ns C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Typ. --- Max. 50 Units C/W 8/25/97 IRF7416 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -30 --- --- --- -1.0 5.6 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A -0.024 --- V/C Reference to 25C, ID = -1mA --- 0.020 VGS = -10V, ID = -5.6A --- 0.035 VGS = -4.5V, ID = -2.8A --- --- V VDS = VGS , ID = -250A --- --- S VDS = -10V, ID = -2.8A --- -1.0 VDS = -24V, VGS = 0V A --- -25 VDS = -24V, VGS = 0V, TJ = 125C --- -100 VGS = -20V nA --- 100 VGS = 20V 61 92 ID = -5.6A 8.0 12 nC VDS = -24V 22 32 VGS = -10V, See Fig. 6 and 9 18 --- VDD = -15V 49 --- ID = -5.6A ns 59 --- RG = 6.2 60 --- RD = 2.7, See Fig. 10 1700 --- VGS = 0V 890 --- pF VDS = -25V 410 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 56 99 -3.1 A -45 -1.0 85 150 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = -5.6A, VGS = 0V TJ = 25C, IF = -5.6A di/dt = 100A/s D G S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -5.6A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = 25mH RG = 25, IAS = -5.6A. (See Figure 12) Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. IRF7416 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT OM - 3.0V TOP 100 -I D , D ra in -to -S o u rc e C u rre n t (A ) -I D , D ra in -to -S o u rc e C u rre n t (A ) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT OM - 3.0V TOP 10 10 -3 .0V -3.0V 20 s P U LSE W IDTH TJ = 25 C A 0.1 1 10 1 1 0.1 1 20 s P U LSE W IDTH TJ = 15 0C A 10 -VD S , D rain-to-S ource V oltage (V ) -VD S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 2 5 C TJ = 1 5 0 C 10 R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D = -5.6A -I D , D rain -to- S our ce C urr ent ( A ) 1.5 1.0 0.5 1 3.0 3.5 4.0 V DS = -1 0 V 2 0 s P U L S E W ID T H 4.5 5.0 5.5 A 0.0 -60 -40 -20 0 20 40 60 80 VG S = -10 V 100 120 140 160 A -VG S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF7416 4000 -V G S , G a te -to -S o u rce V o lta g e (V ) V GS C is s C rss C oss = 0 V, f = 1M H z = C gs + C gd , Cds SH OR TE D = C gd = C d s + C gd 20 I D = -5.6 A V DS = -24 V V DS = -15 V 16 C , C a p a c ita n c e (p F ) 3000 C i ss 2000 12 C os s 8 1000 C rss 4 0 1 10 100 A 0 0 20 40 FO R TEST C IR C U IT SEE F IGU R E 9 60 80 A 100 V D S , D rain-to-S ource Voltage (V ) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -I S D , R e ve rse D ra in C u rre n t (A ) OPERATION IN THIS AREA LIMITED BY RDS(on) -I D , Drain Current (A) I 100us TJ = 1 50C 10 10 1ms TJ = 25 C 1 0.4 0.6 0.8 1.0 VG S = 0 V A 1.2 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 -V S D , S ource-to-Drain V oltage (V ) -V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRF7416 VDS QG RD VGS RG -10V VG D.U.T. + -10V Charge Pulse Width 1 s Duty Factor 0.1 % Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. Fig 10a. Switching Time Test Circuit 50K 12V .2F .3F td(on) tr t d(off) tf VGS 10% + D.U.T. VDS VGS 90% -3mA VDS IG ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit 100 Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x Z thJA + TA J 0.1 1 10 100 10 0.1 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient - QGS QGD VDD IRF7416 1000 EAS , Single Pulse Avalanche Energy (mJ) VDS L RG D .U .T IA S D R IV E R 0 .0 1 800 VD D A ID -2.5A -4.5A BOTTOM -5.6A TOP - 20V tp 600 400 15V Fig 12a. Unclamped Inductive Test Circuit I AS 200 0 25 50 75 100 125 150 o Starting T J, Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms IRF7416 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG VGS* ** * dv/dt controlled by RG * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test + - * VDD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [ VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS IRF7416 Package Outline SO8 Outline INCHES D -B- MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 DIM 5 MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H K L .050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8 0.10 (.004) -CB 8X 0.25 (.010) A1 M CASBS L 8X 6 C 8X RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X Part Marking Information SO8 E X A M P LE : TH IS IS A N IR F 7 101 D A T E C O D E (Y W W ) Y = LA S T D IG IT O F T H E YE A R W W = W EEK XX X X W AFER LO T C O D E (LA S T 4 D IG IT S ) 3 12 IN T E R N A TI ON A L R E C T IF IE R LO G O F 7 101 T OP PART NUMBER B O T TO M IRF7416 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) T ER M IN A L N U M B E R 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E ED D IR E C T IO N N O TE S: 1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R. 2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ). 3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 . 33 0. 00 (12 .99 2) M A X. 1 4. 40 ( .5 66 ) 1 2. 40 ( .4 88 ) N O T ES : 1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER . 2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 |
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