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| SI4500DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.030 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V 0.065 @ VGS = -4.5 V 0.100 @ VGS = -2.5 V ID (A) "7.0 "6.0 "4.5 "3.5 P-Channel -20 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D D D D G2 D G1 S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 20 "12 "7.0 "5.5 "30 1.7 2.5 1.6 P-Channel -20 "12 "4.5 "3.5 "20 -1.7 Unit V A W _C -55 to 150 THERMAL RESISTANCE RATINGS N-Channel Parameter P Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on FR4 Board. b. t v 10 sec Document Number: 70880 S-00269--Rev. A, 26-Apr-99 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady-State Steady-State P- Channel Typ 40 73 20 Symbol S bl RthJA RthJC Typ 38 73 17 Max 50 95 22 Max 50 95 26 Unit Ui _C/W 2-1 SI4500DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = -16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55_C VDS = -16 V, VGS = 0 V, TJ = 55_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 4.5 V VDS = -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 7.0 A DiS OS Ri Drain-Source On-State Resistanceb rDS(on) VGS = -4.5 V, ID = -4.5 A VGS = 2.5 V, ID = 6.0 A VGS = -2.5 V, ID = -3.5 A Forward Transconductanceb gfs VDS = 15 V, ID = 7.0 A VDS = -15 V, ID = -4.5 A IS = 1.7 A, VGS = 0 V IS = -1.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -20 0.022 0.058 0.030 0.087 22 10 0.70 -0.80 1.2 -1.2 V 0.030 0.065 0.040 0.100 S W 0.6 -0.6 "100 "100 1 -1 5 -5 A mA A nA V Symbol Test Condition Min Typa Max Unit Gate-Body Leakage IGSS Diode Forward Voltageb VSD Dynamica Total Gate Charge Qg N-Channel N Ch l Channel VDS = 10 V, VGS = 4.5 V, ID = 3.5 A P-Channel VDS = -10 V, VGS = -4.5 V, ID = -4.5 A 10 V 45V 45 Gate-Drain Charge Qgd N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Ch l N-Channel N Channel VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = -10 V RL = 10 W 10 V, ID ^ -1 A, VGEN = -4.5 V, RG = 6 W 1 4.5 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IF = 1.7 A, di/dt = 100 A/ms N-Ch P-Ch 13 8.5 3.0 2.8 3.3 1.7 22 15 40 32 50 57 20 40 40 40 40 30 80 60 100 100 40 80 80 80 ns 25 15 C nC Gate-Source Charge Qgs Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70880 S-00269--Rev. A, 26-Apr-99 SI4500DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 3 V 2.5 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Vishay Siliconix N-CHANNEL Transfer Characteristics 18 18 12 2V 12 TC = 125_C 6 25_C -55_C 0 6 1.5 V 0 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.08 2100 1800 r DS(on)- On-Resistance ( W ) C - Capacitance (pF) 0.06 Capacitance Ciss 1500 1200 900 600 300 Crss 0.04 VGS = 2.5 V VGS = 4.5 V 0.02 Coss 0 0 6 12 18 24 30 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 4.5 VDS = 10 V ID = 4.5 A Gate Charge 1.8 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 -50 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 3.6 VGS = 4.5 V ID = 4.5 A 2.7 1.8 0.9 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 70880 S-00269--Rev. A, 26-Apr-99 www.vishay.com S FaxBack 408-970-5600 2-3 SI4500DY Vishay Siliconix New Product N-CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 I S - Source Current (A) 10 0.08 ID = 4.5 A 0.06 TJ = 150_C 0.04 r DS(on) TJ = 25_C 0.02 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 0.2 V GS(th) Variance (V) Power (W) 60 80 Single Pulse Power, Juncion-To-Ambient -0.0 40 -0.2 20 -0.4 -0.6 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 73_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70880 S-00269--Rev. A, 26-Apr-99 SI4500DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Duty Cycle = 0.5 Vishay Siliconix N-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 3V 16 VGS = 5, 4.5, 4, 3.5 V I D - Drain Current (A) 2.5 V 12 I D - Drain Current (A) 16 20 P-CHANNEL Transfer Characteristics TC = -55_C 125_C 12 25_C 8 8 2V 4 1.5 V 0 0 1 2 3 4 5 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 1500 Capacitance r DS(on)- On-Resistance ( W ) 0.16 C - Capacitance (pF) 1200 Ciss 0.12 VGS = 2.5 V VGS = 2.7 V 900 0.08 VGS = 4.5 V 600 Coss 0.04 300 Crss 0 0 4 8 12 16 20 0 0 4 8 12 16 20 ID - Drain Current (A) Document Number: 70880 S-00269--Rev. A, 26-Apr-99 VDS - Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 2-5 SI4500DY Vishay Siliconix New Product P-CHANNEL 1.6 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 5 VDS = 10 V ID = 4.4 A r DS(on)- On-Resistance ( W ) (Normalized) 4 1.4 Gate Charge On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) VGS = 4.5 V ID = 4.4 A 3 1.2 2 1.0 1 0.8 0 0 2 4 6 8 10 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.20 On-Resistance vs. Gate-to-Source Voltage 10 I S - Source Current (A) r DS(on)- On-Resistance ( W ) 0.16 0.12 ID = 4.4 A 0.08 TJ = 150_C TJ = 25_C 0.04 1 0 0.25 0.50 0.75 1.00 1.25 1.50 0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 80 Single Pulse Power, Juncion-To-Ambient 0.4 60 V GS(th) Variance (V) 0.2 Power (W) ID = 250 mA 40 0.0 20 -0.2 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 70880 S-00269--Rev. A, 26-Apr-99 SI4500DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix P-CHANNEL 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 73_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 70880 S-00269--Rev. A, 26-Apr-99 www.vishay.com S FaxBack 408-970-5600 2-7 |
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