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| AM42-0007 GaAs MMIC VSAT Power Amplifier 2.0W 14.0 - 14.5 GHz Features * * * * * * * High Linear Gain: 22 dB Typ. High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 22% Typ. High P1dB: 32 dBm Typ. 50=Input/Output Broadband Matched Integrated Output Power Detector High Performance Ceramic Bolt Down Package CR-15 -C .70 .530 .085 10 .050 MIN. X 10 9 8 7 6 -B.159 .328 .010 .318 .010 2X o .096 THRU o.004 M A B C 1 2 3 4 5 Description M/A-COM's AM42-0007 is a three-stage MMIC linear power amplifier in a ceramic bolt down style hermetic package. The AM42-0007 employs a fully matched chip with internally decoupled Gate and Drain bias networks and an ouput power detector. The AM42-0007 is designed to be operated from a constant voltage Drain supply. The AM42-0007 is designed for use as an output stage or a driver, in applications for VSAT systems. This design is fully monolithic and requires a minimum of external components. M/A-COM's AM42-0007 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications. .010 SQ. ORIENTATION TAB .115 .010 4X .050 4X .100 .33 .005 .002 10 .010 .003 X 4X .06 X 45 CHAMFER CERAMIC .040 .090 MAX -A .030 BASE PLATE Notes: (unless otherwise specified) 1. Dimensions are in inches. 2. Tolerance: .XXX = 0.005 .XX = 0.010 Ordering Information Part Number AM42-0007 Package Ceramic Bolt Down Package Electrical Specifications: TC = +25C, VDD = +9V, VGG = -5.0V, Z0 = 50,=Frequency = 14.0-14.5 GHz ,= , Parameter Linear Gain Input VSWR Output VSWR Saturated Output Power Output Power @ Output IP3 Power Added Efficiency Bias Currents Thermal Resistance Detector Output Voltage Abbv. GL VSWRIN VSWROU T Test Conditions PIN 0 dBm PIN 0 dBm PIN 0 dBm PIN = +14 dBm -- (Refer to Note 1) PIN = +14 dBm PIN = +14 dBm 25C Heat Sink RL=10K, POUT =+31dBm Units dB -- -- dBm dBm dBm % mA C/W V Min. 19 -- -- -- 31 -- -- Typ. 22 2.5:1 2.7:1 33 32 41 22 18 9.5 +3.5 Max. -- 2.7:1 -- -- -- -- -- 25 -- -- PSAT P1dB IP3 PAE IGG JC Vdet -- -- IP3 is measured with two +24 dBm output tones @ 1 MHz spacing. Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. V 4.0 1 GaAs MMIC VSAT Power Amplifier 2.0W, 14.0 - 14.5 GHz Absolute Maximum Ratings1,2,3,4 Parameter VDD AM42-0007 Typical Bias Configuration3,4,7 10 K V det 7 V DD 3.3 F 6 0.01 F VGG Power Dissipation RF Input Power Channel Temperature Storage Temperature Ids Absolute Maximum 12 Volts -10 Volts 13.2 W +23 dBm 150C -65C to +150C 2100 mA 1. Operation of this device outside any of these limits may cause permanent damage. 2. Case Temperature (TC) = +25C. 3. Nominal bias is obtained by first connecting -5 volts to pin 4 (VGG), followed by connection +9 volts to pin 6 (VDD). Note sequence. 4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 5. No dc bias voltage appears at the RF ports. 6. The dc resistance at the input port is an open circuit and at the ouput port is a short circuit. 7. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of pin 6. 3 IN AM42-0007 0.01 F 8 OUT GND 1,2,5,9,10 4 V GG Pin Configuration Pin No. 1 2 3 4 5 6 7 8 9 10 Pin Name GND GND IN VGG GND VDD Vdet OUT GND GND Description DC and RF Ground DC and RF Ground RF Input Gate Supply DC and RF Ground Voltage Drain Supply Output Power Detector RF Output DC and RF Ground DC and RF Ground Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. V 4.0 2 GaAs MMIC VSAT Power Amplifier 2.0W, 14.0 - 14.5 GHz Typical Performance @ +25C Test Conditions are listed in the section "Electrical Specifications". 25 AM42-0007 Linear Gain vs. Frequency Magnitude (dB) 25 Input and Output Return Loss vs. Frequency Linear Gain (dB) 15 15 5 5 S11 -5 S22 -5 -15 10 12 14 16 18 -15 10 12 14 16 18 Frequency (GHz) Frequency (GHz) 35 33 Output Power vs. Input Power @ 14.25 GHz POUT 50 40 30 6 5 4 Detector Voltage vs. Output Power @ 14.25 GHz POUT (dBm) 31 29 VDET (V) PAE 3 2 1 0 19 21 23 25 20 27 25 0 4 8 12 16 10 0 PIN (dBm) POUT (dBm) 27 29 31 33 35 33 Output Power vs. Frequency @ PIN = +14 dBm 50 40 Power Added Efficiency vs. Frequency @ PIN = +14 dBm POUT (dBm) PAE (%) 31 29 27 25 12 13 14 15 16 30 20 10 0 12 13 14 15 16 Frequency (GHz) Frequency (GHz) Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. V 4.0 3 |
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