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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1002MA/D Microwave Pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. * Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB * 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR * Industry Standard Package * Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Internal Input Matching for Broadband Operation * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Symbol RJC Value 20 50 3.5 250 7.0 40 - 65 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/C C MRF1002MA MRF1002MB 2.0 W (PEAK), 960 - 1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON CASE 332-04, STYLE 1 MRF1002MA THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Max 25 Unit C/W CASE 332A-03, STYLE 1 MRF1002MB ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 5.0 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 20 50 50 3.5 -- -- -- -- -- -- -- -- -- -- 0.5 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) hFE 10 -- 100 -- NOTES: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 MRF1002MA MRF1002MB 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 35 Vdc, IE = 0, f = 1.0 MHz) Cob -- 2.5 5.0 pF FUNCTIONAL TESTS (Pulse Width = 10 s, Duty Cycle = 1.0%) Common-Base Amplifier Power Gain (VCC = 35 Vdc, Pout = 2.0 W pk, f = 1090 MHz) Collector Efficiency (VCC = 35 Vdc, Pout = 2.0 W pk, f = 1090 MHz) Load Mismatch (VCC = 35 Vdc, Pout = 2.0 W, f = 1090 MHz, VSWR = 10:1 All Phase Angles) GPB No Degradation in Power Output 10 40 12 45 -- -- dB dB + C2 L1 C3 C4 + 35 Vdc - Z2 Z5 DUT Z9 Z12 C1 RF INPUT Z1 Z4 Z7 Z8 Z11 Z14 RF OUTPUT Z3 Z6 Z10 Z13 C1, C3 -- 220 pF Chip Capacitor, 100 mil ATC C2 -- 20 F/50 Vdc Electrolytic C4 -- 0.1 F Erie Redcap L1, L2 -- 2 Turns #18 AWG, 1/8 ID Z1-Z14 -- Distributed Microstrip Elements, See Photomaster Board Material -- 0.031 Thick Teflon-Fiberglass, Board Material -- r = 2.56 Figure 1. 1090 MHz Test Circuit MRF1002MA MRF1002MB 2 MOTOROLA RF DEVICE DATA 3 f = 0.96 GHz Pout , OUTPUT POWER (W pk) 1.09 GHz 2 1.215 GHz 1.5 VCC = 35 V tP = 10 s D = 1% Pout , OUTPUT POWER (W pk) 2.5 3 Pin = 200 mW pk 160 mW pk 2.5 2 120 mW pk 1.5 VCC = 35 V tP = 10 s D = 1% 960 1090 f, FREQUENCY (MHz) 1 1 80 mW pk 0.5 0 40 80 120 Pin, INPUT POWER (mW pk) 160 200 0.5 1215 Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency 2 tP = 10 s D = 1% f = 1090 MHz Pin = 200 mW pk 125 mW pk 15 Pout = 2 W pk VCC = 35 V tP = 10 s D = 1% Pout , OUTPUT POWER (W pk) 100 mW pk 1 75 mW pk G PB , POWER GAIN (dB) 40 1.5 14 13 12 0.5 11 0 0 5 10 15 20 25 30 VCC, SUPPLY VOLTAGE (V) 35 10 960 1090 f, FREQUENCY (MHz) 1215 Figure 4. Output Power versus Supply Voltage Figure 5. Power Gain versus Frequency + j50 + j25 Zin + j10 f = 960 MHz 1215 1090 + j100 + j150 + j250 + j500 0 10 25 50 100 150 250 500 VCC = 35 Vdc, tP = 10 s, D = 1.0% f MHz Zin Ohms 15.5 + j16.5 15 + j20 14 + j27 ZOL* Ohms Pout = 2.0 W pk 20 + j32.5 25 + j34 33.5 + j42.5 ZOL* Ohms Pin = 0.2 W pk 25 + j21 31 + j26 37 + j32.5 ZOL* (Pin = 0.2 W pk) f = 960 MHz - j10 960 1090 1090 1215 1215 - j150 - j500 - j250 960 1090 1215 ZOL* (Pout = 2 W pk) - j25 COORDINATES IN OHMS - j50 - j100 ZOL* = Conjugate of the optimum load impedance into which ZOL* = the device output operates at a given output power, ZOL* = voltage, and frequency. Figure 6. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRF1002MA MRF1002MB 3 Pout = 2 W pk VCC = 35 V tP = 1 ms D = 10% f = 1090 MHz Figure 7. Typical Long Pulse Performance MRF1002MA MRF1002MB 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS L M 4 NOTES: 1. DIMENSION K APPLIES TWO PLACES. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1973. 3 2 K 1 D DIM A B C D E F H J K L M N U BASE EMITTER BASE COLLECTOR A H F U 8-32 UNC 2A J N C -T- SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 6.86 7.62 6.10 6.60 16.26 16.76 4.95 5.21 1.40 1.65 2.67 4.32 1.40 1.65 0.08 0.18 15.24 --- 2.41 2.67 45 _NOM 4.97 6.22 2.92 3.68 INCHES MIN MAX 0.270 0.300 0.240 0.260 0.640 0.660 0.195 0.205 0.055 0.065 0.105 0.170 0.055 0.065 0.003 0.007 0.600 --- 0.095 0.105 45 _NOM 0.180 0.245 0.115 0.145 E -B- 0.76 (0.030) M TB M CASE 332-04 ISSUE D MRF1002MA F 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS MIN 6.86 2.93 4.96 2.42 1.27 0.08 15.24 MAX 7.36 3.42 5.20 2.66 1.77 0.17 --- K 1 3 D DIM A C MIN 0.270 0.115 0.195 0.095 0.050 0.003 0.600 MAX 0.290 0.135 0.205 0.105 0.070 0.007 --- 2 D F H J K H SEATING PLANE A J C STYLE 1: PIN 1. 2. 3. 4. BASE EMITTER BASE COLLECTOR CASE 332A-03 ISSUE D MRF1002MB MOTOROLA RF DEVICE DATA MRF1002MA MRF1002MB 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF1002MA MRF1002MB 6 *MRF1002MA/D* MRF1002MA/D MOTOROLA RF DEVICE DATA |
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