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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10150/D Microwave Pulse Power Transistor . . . designed for 1025 - 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. * Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ) * 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR * Hermetically Sealed Package * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Internal Input and Output Matching * Characterized with 10 s, 10% Duty Cycle Pulses * Recommended Driver for a Pair of MRF10500 Transistors MRF10150 150 W (PEAK) 1025 - 1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 376B-02, STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Peak (1) Total Device Dissipation @ TC = 25C (1), (2) Derate above 25C Storage Temperature Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 65 65 3.5 14 700 4.0 - 65 to + 200 200 Unit Vdc Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RJC Max 0.25 Unit C/W NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case JC value measured @ 10 s, 10%.) (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 MRF10150 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 60 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 36 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 65 65 3.5 -- -- -- -- -- -- -- -- 25 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 20 -- -- -- FUNCTIONAL TESTS Common-Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz) Collector Efficiency (VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz) Load Mismatch (VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz, VSWR = 10:1 All Phase Angles) GPB 9.5 40 10 -- -- -- dB % No Degradation in Output Power Z5 L1 D.U.T. RF INPUT C2 C3 C4 + + - C1 Z1 Z2 Z3 Z4 Z6 Z7 Z8 Z9 RF OUTPUT C1 -- 82 pF 100 Mil Chip Capacitor C2 -- 39 pF 100 Mil Chip Capacitor C3 -- 0.1 F C4 -- 100 F, 100 Vdc, Electrolytic L1 -- 3 Turns #18 AWG, 1/8 ID, 0.18 Long Z1-Z9 -- Microstrip, See Details Board Material -- Teflon Glass Laminate Dielectric Thickness = 0.030 r = 2.55, 2 Oz. Copper .625 .15 .275 .081 .09 .522 .625 .39 1.751 .081 .583 0.943 .334 .34 .173 1.0 .081 .489 .787 .37 .100 .081 .363 .081 1.383 .081 1.803 Figure 1. Test Circuit MRF10150 2 MOTOROLA RF DEVICE DATA 220 POUT, OUTPUT POWER (WATTS) 180 140 100 60 20 0 f = 1090 MHz VCC = 50 V 0 2 4 6 8 10 12 14 16 18 20 22 24 PIN, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power f = 1030 MHz Zin 1060 1120 1090 Zo = 10 1150 ZOUT (ZOL*) 1150 1120 f = 1030 MHz 1060 1090 POUT = 150 W Pk VCC = 50 V f MHz 1030 1060 1090 1120 1150 Zin OHMS 3.8 + j3.5 4.0 + j3.3 4.2 + j3.0 4.4 + j2.3 4.1 + j1.8 ZOL* (ZOUT) OHMS 4.6 + j0.7 4.6 + j0.3 4.1 - j1.0 3.8 - j0.8 3.6 - j0.3 ZOL* is the conjugate of the optimum load impedance into which the device operates at a given output power voltage and frequency. Figure 3. Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA MRF10150 3 PACKAGE DIMENSIONS G Q 2 PL 0.25 (0.010) R K D 2 PL M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H K N Q R INCHES MIN MAX 0.890 0.910 0.370 0.400 0.145 0.160 0.140 0.160 0.055 0.065 0.003 0.006 0.650 BSC 0.110 0.130 0.180 0.220 0.390 0.410 0.115 0.135 0.390 0.140 MILLIMETERS MIN MAX 22.61 23.11 9.40 10.16 3.69 4.06 3.56 4.06 1.40 1.65 0.08 0.15 16.51 BSC 2.80 3.30 4.57 5.59 9.91 10.41 2.93 3.42 9.91 10.41 -B- 0.25 (0.010) M TA M B M H E N F 2 PL 0.25 (0.010) -T- M TA M B M -A- SEATING PLANE C STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE CASE 376B-02 ISSUE B Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF10150 4 *MRF10150/D* MRF10150/D MOTOROLA RF DEVICE DATA |
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