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| 2SC3832 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3832 500 400 10 7(Pulse14) 2 50(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=-0.5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 50typ (Ta=25C) 2SC3832 Unit External Dimensions MT-25(TO220) 3.00.2 10.20.2 4.80.2 2.00.1 A A V V MHz pF 2.5 12.0min 4.0max 16.00.7 8.80.2 a b o3.750.2 V 1.35 0.65 +0.2 -0.1 2.5 BCE 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 66.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 IB2 (A) -0.6 ton (s) 1max tstg (s) 3max tf (s) 0.5max Weight : Approx 2.6g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 7 0m VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t)( V ) Base-Emitter Saturation Voltage V B E(s a t)( V ) (IC/I B= 5) I C - VBE Temperature Characteristics (Typical) 7 (VCE=4V) 60 0m A 80 6 A 6 Collector Current I C (A) VBE(sat) 1 -55C (Cas e Temp) mp) ) as e 2 5 Tem p) C 400mA Collector Current I C (A) 300mA 4 200mA Tem p) e Te 25C (Cas 125C (Case 4 ) emp se T 25C (Ca Temp 125 C 2 2 12 5 C V C E( sat) 0 0.02 0.05 0.1 0.5 1 -5 5 C 0 0 1 2 3 4 57 0 0 0.2 0.4 0.6 0.8 -55C (C (Cas IB=100mA (Ca e Te se mp) 1.0 1.2 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 j - a( C/W) hFE - IC Characteristics (Typical) 10 t on *t stg * tf - IC Characteristics (Typical) t on *t s t g*t f( s) j-a - t Characteristics 4 DC Cur rent Gain h F E 25C VCC 200V I C: I B1: -I B 2= 10:1:2 1 0.5 t on tf 0.1 0.2 0.5 1 5 -30 C Transient Thermal Resistance 125 C 5 t s tg Sw it ching Time 1 10 0.5 0.3 5 0.02 0.05 0.1 0.5 1 5 7 1 10 Time t(ms) 100 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 20 10 Reverse Bias Safe Operating Area 20 50 P c - T a Derating M aximum Power Dissipa ti on P C( W) 10 5 Collect or Curr ent I C( A) 0 s 10 5 Collector Curren t I C( A) 40 W ith In fin 30 ite he at si 1 1 Without Heatsink Natural Cooling L=3mH -IB2=1A Duty:less than 1% nk 20 0.5 Without Heatsink Natural Cooling 0.5 10 Without Heatsink 0 25 50 75 100 125 150 0.1 5 10 50 100 500 Collector-Emitter Voltage V C E( V) 0.1 5 10 50 100 500 2 0 Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 72 |
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