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| DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D168 BYG60 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification File under Discrete Semiconductors, SC01 1996 Jun 05 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * UL 94V-O classified plastic package * Shipped in 12 mm embossed tape. Top view handbook, 4 columns BYG60 series The well-defined void-free case is of a transfer-moulded thermo-setting plastic. DESCRIPTION DO-214AC surface mountable package with glass passivated chip. cathode band a k Side view MSA474 Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYG60D BYG60G BYG60J BYG60K BYG60M VR continuous reverse voltage BYG60D BYG60G BYG60J BYG60K BYG60M IF(AV) average forward current averaged over any 20 ms period; Ttp = 100 C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb = 60 C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb = 60 C; see Fig.3 IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax - - - - - - - 200 400 600 800 1000 1.90 0.90 V V V V V A A PARAMETER repetitive peak reverse voltage - - - - - 200 400 600 800 1000 V V V V V CONDITIONS MIN. MAX. UNIT - 0.65 A - 25 A 1996 Jun 05 2 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers SYMBOL ERSM PARAMETER non-repetitive peak reverse avalanche energy BYG60D to J BYG60K and M Tstg Tj storage temperature junction temperature see Fig.4 CONDITIONS L = 120 mH; Tj = Tj max prior to surge; inductive load switched off - - -65 -65 BYG60 series MIN. MAX. UNIT 10 7 +175 +175 mJ mJ C C ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BYG60D BYG60G BYG60J BYG60K BYG60M IR reverse current VR = VRRMmax; see Fig.6 VR = VRRMmax; Tj = 165 C; see Fig.6 trr reverse recovery time BYG60D to J BYG60K and M Cd diode capacitance BYG60D to J BYG60K and M when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.8 VR = 0 V; f = 1 MHz - - 30 25 - - pF pF CONDITIONS IF = 1 A; Tj = Tj max; see Fig.5 IF = 1 A; see Fig.5 IR = 0.1 mA 300 500 700 900 1100 - - - - - - - - - - - - - - 5 100 V V V V V A A MIN. - - TYP. - - MAX. 0.98 1.20 V V UNIT - - - - 250 300 ns ns THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 note 2 Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper 35 m, see Fig.7. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig.7. For more information please refer to the `General Part of Handbook SC01'. CONDITIONS VALUE 25 100 150 UNIT K/W K/W K/W 1996 Jun 05 3 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers GRAPHICAL DATA MGD481 BYG60 series MGD482 handbook, halfpage 4 handbook, halfpage 1.6 IF(AV) (A) 3 IF(AV) (A) 1.2 2 0.8 1 0.4 0 0 100 Ttp (C) 200 0 0 100 Tamb (C) 200 VR = VRRMmax; = 0.5; a = 1.57. VR = VRRMmax; = 0.5; a = 1.57 Device mounted as shown in Fig.7; solid line: Al2O3 PCB; dotted line: epoxy PCB. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MGD483 handbook, halfpage 200 Tj (C) 160 MGD484 handbook, halfpage 10 IF (A) 8 120 6 80 D 40 G J K M 4 2 0 0 400 800 VR (V) 1200 0 0 1 2 VF (V) 3 Device mounted as shown in Fig.7 Solid line: Al2O3 PCB Dotted line: epoxy PCB. Solid line: Tj = 25 C. Dotted line: Tj = 175 C. Fig.4 Maximum permissible junction temperature as a function of reverse voltage. Fig.5 Forward current as a function of forward voltage; maximum values. 1996 Jun 05 4 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers BYG60 series 10 3 handbook, halfpage IR (A) 10 2 MGC532 50 4.5 50 10 2.5 1 0 100 Tj ( C) o 200 1.25 MSB213 VR = VRMMmax. Dimensions in mm. Material: AL2O3 or epoxy-glass. Fig.6 Reverse current as a function of junction temperature; maximum values. Fig.7 Printed-circuit board for surface mounting. handbook, full pagewidth DUT + IF (A) 0.5 1 t rr 10 25 V 50 0 0.25 0.5 IR (A) 1 t MAM057 Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns. Fig.8 Test circuit and reverse recovery time waveform and definition. 1996 Jun 05 5 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers PACKAGE OUTLINE BYG60 series handbook, full pagewidth 5.5 5.1 4.5 4.3 2.3 2.0 0.05 0.2 3.3 2.7 MSA414 2.8 1.6 2.4 1.4 Marking band indicates the cathode. Dimensions in mm. Fig.9 SOD106. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 05 6 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. |
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