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FSYC9055D, FSYC9055R
July 1999
Features
* Total Dose
CT UCT ODU D E PR TE PRO R ET SOL BSTITU C9055 OB SU Y , FST LE SSIB YC9055D PO ST F
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
Description
The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Harris portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Harris Semiconductor for any desired deviations from the data sheet.
* 59A, -60V, rDS(ON) = 0.027
[ /Title (FSYC 9055D, FSYC 9055R) /Subject Radiaion ardned, EGR esisant hanel ower OSETs) /Autho () /Keyords Radiaion ardned, EGR esisant Phanel ower OSETs) /Cretor () /DOCI
- Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM * Photo Current - 6nA Per-RAD(Si)/s Typically * Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14Neutrons/cm2g
Ordering Information
RAD LEVEL 10K 10K 100K 100K 100K SCREENING LEVEL Commercial TXV Commercial TXV Space PART NUMBER/BRAND FSYC9055D1 FSYC9055D3 FSYC9055R1 FSYC9055R3 FSYC9055R4
Symbol
D
Formerly available as type TA17750.
G
S
Package
SMD-2
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright
(c) Harris Corporation 1999
File Number
4525.1
1
FSYC9055D, FSYC9055R
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified FSYC9055D, FSYC9055R -60 -60 59 38 177 20 162 65 1.30 177 59 177 -55 to 150 300 UNITS V V A A A V W W W/ oC A A A oC oC
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100H, (See Test Figure). . . . . . . . . . . . . . . . . . . .IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC MIN -60 -2.0 -1.0 VGS = 0V to -20V VGS = 0V to -12V VGS = 0V to -2V VDD = -30V, ID = 59A ID = 59A, VDS = -15V VDS = -25V, VGS = 0V, f = 1MHz TYP 0.017 140 38 26 -6 6100 2200 300 MAX -7.0 -6.0 25 250 100 200 -1.79 0.027 0.043 55 35 85 35 280 160 17 49 38 0.77 UNITS V V V V A A nA nA V ns ns ns ns nC nC nC nC nC V pF pF pF
oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On-State Voltage Drain to Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge at 12V Threshold Gate Charge Gate Charge Source Gate Charge Drain Plateau Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case
IDSS IGSS VDS(ON) rDS(ON)12 td(ON) tr td(OFF) tf Qg(TOT) Qg(12) Qg(TH) Qgs Qgd V(PLATEAU) CISS COSS CRSS RJC
VDS = -48V, VGS = 0V VGS = 20V
VGS = -12V, ID = 59A ID = 38A, VGS = -12V
VDD = -30V, ID = 59A, RL = 0.51, VGS = -12V, RGS = 2.35
Source to Drain Diode Specifications
PARAMETER Forward Voltage Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD = 59A ISD = 59A, dISD/dt = 100A/s MIN -0.6 TYP MAX -1.8 120 UNITS V ns
2
FSYC9055D, FSYC9055R
Electrical Specifications up to 100K RAD
PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Leakage Zero Gate Leakage Drain to Source On-State Volts Drain to Source On Resistance NOTES: 1. Pulse test, 300s Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . (Note 3) (Note 3) (Notes 2, 3) (Note 3) (Notes 1, 3) (Notes 1, 3) TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IGSS IDSS VDS(ON) rDS(ON)12 TEST CONDITIONS VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = 20V, VDS = 0V VGS = 0, VDS = -48V VGS = -12V, ID = 59A VGS = -12V, ID = 38A MIN -60 -2.0 MAX -6.0 100 25 -1.79 0.027 UNITS V V nA A V
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5) ION SPECIES Ni Br Br Br I I I I I NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 60 60 60 60 60 TYPICAL RANGE () 43 36 36 36 31 31 31 31 31 APPLIED VGS BIAS (V) 20 10 15 20 0 5 10 15 20 (NOTE 6) MAXIMUM VDS BIAS (V) -60 -60 -48 -36 -60 -48 -36 -24 -12
TEST Single Event Effects Safe Operating Area
SYMBOL SEESOA
Typical Performance Curves Unless Otherwise Specified
123-70 -60 -50 VDS (V) -40 -30 -20 -10 TEMP = 25oC 0 0 5 10 15 VGS (V) 20 25 1E-7 -10 -30 -100 DRAIN SUPPLY (V) -300 -1000 LET = 26MeV/mg/cm2, RANGE = 43 LET = 37MeV/mg/cm2, RANGE = 36 LET = 60MeV/mg/cm2, RANGE = 31 FLUENCE = 1E5 IONS/cm2 (TYPICAL) LIMITING INDUCTANCE (HENRY) 1E-3
1E-4
ILM = 10A 30A
1
1E-5
100A 300A
2 3
1E-6
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS
3
FSYC9055D, FSYC9055R Typical Performance Curves Unless Otherwise Specified
70 60 ID , DRAIN CURRENT (A) 50 ID , DRAIN (A) 40 30 20 10 0 -50 1 -1 100 100s
(Continued)
500 TC = 25oC
1ms
10 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) -10 -100 VDS , DRAIN-TO-SOURCE VOLTAGE (V) -200
0 50 100 TC , CASE TEMPERATURE (oC)
150
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5 PULSE DURATION = 250ms, VGS = 12V, ID = 38A 2.0 NORMALIZED rDS(ON)
-12V
QG
1.5
1.0
QGS VG
QGD
0.5
0.0 -80 CHARGE
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 5. BASIC CHARGE WAVEFORM
10
FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
THERMAL RESPONSE (ZJC)
1 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-3 10-2 10-1 PDM
NORMALIZED
0.1
t1 t2 100 101
0.001 10-5
10-4
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
4
FSYC9055D, FSYC9055R Typical Performance Curves Unless Otherwise Specified
300
(Continued)
IAS , AVALANCHE CURRENT (A)
STARTING TJ = 25oC 100 STARTING TJ = 150oC
IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 10 0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS BVDSS L + CURRENT I TRANSFORMER AS IAS tP VDS VDD
-
VARY tP TO OBTAIN REQUIRED PEAK IAS 0V tP
50
+
DUT 50
VDD
50V-150V tAV
VGS 20V
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
VDD
tON td(ON)
tOFF td(OFF) tr tf 90%
RL VDS 0V DUT
VDS
90%
10%
10%
VGS = -12V
90% RGS VGS 10% 50% PULSE WIDTH 50%
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUI
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
5
FSYC9055D, FSYC9055R Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current Drain to Source On Resistance Gate Threshold Voltage NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. SYMBOL IGSS IDSS rDS(ON) VGS(TH) TEST CONDITIONS VGS = 20V VDS = 80% Rated Value TC = 25oC at Rated ID ID = 1.0mA MAX 20 (Note 7) 25 (Note 7) 20% (Note 8) 20% (Note 8) UNITS nA A V
Screening Information
TEST Gate Stress Pind Pre Burn-In Tests (Note 9) JANTXV EQUIVALENT VGS = -30V, t = 250s Optional MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours 10% MIL-S-19500, Group A, Subgroup 2 JANS EQUIVALENT VGS = -30V, t = 250s Required MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours 5% MIL-S-19500, Group A, Subgroups 2 and 3
Steady State Gate Bias (Gate Stress)
Interim Electrical Tests (Note 9)
Steady State Reverse Bias (Drain Stress)
PDA Final Electrical Tests (Note 9)
NOTE: 9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER Safe Operating Area Unclamped Inductive Switching Thermal Response Thermal Impedance SYMBOL SOA IAS VSD VSD TEST CONDITIONS VDS = -48V, t = 10ms VGS(PEAK) = -15V, L = 0.1mH tH = 10ms; VH = -25V; IH = 4A tH = 500ms; VH = -20V; IH = 4A (Heat Sink Required) MAX 9.0 177 65 135 UNITS A A mV mV
6
FSYC9055D, FSYC9055R Rad Hard Data Packages - Harris Power Transistors
TXV Equivalent 1. Rad Hard TXV Equivalent - Standard Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A E. Group B F. Group C G. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group A G. Group B H. Group C I. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet
2. Rad Hard TXV Equivalent - Optional Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data D. Group A E. Group B - Attributes Data Sheet - Group A Lot Traveler - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data
2. Rad Hard Max. "S" Equivalent - Optional Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data
F. Group C
G. Group B
H. Group C
G. Group D
I. Group D
Class S - Equivalents 1. Rad Hard "S" Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report
7
FSYC9055D, FSYC9055R SMD-2
3 PAD CERAMIC LEADLESS CHIP CARRIER INCHES
E
MILLIMETERS MIN 3.27 3.43 13.20 11.05 2.92 17.40 11.94 3.86 MAX 3.53 3.68 13.46 11.30 3.17 17.65 12.19 4.11 NOTES -
SYMBOL A b D
MIN 0.129 0.135 0.520 0.435 0.115 0.685 0.470 0.152
MAX 0.139 0.145 0.530 0.445 0.125 0.695 0.480 0.162
D
D1 D2 E E1 E2 NOTES:
A
1. No current JEDEC outline for this package. 2. Controlling dimension: INCH. 3. Revision 2 dated 6-98.
E2
E1
2 3 D2
D1
1
b
1 - GATE 2 - SOURCE 3 - DRAIN
8

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