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| Band Switching Diodes MA3Z080D, MA3Z080E Silicon epitaxial planar type Unit : mm For band switching 2.1 0.1 0.425 1.25 0.1 0.425 + 0.1 * Low forward dynamic resistance rf * Less voltage dependence of diode capacitance CD * S-mini type package containing two elements, allowing downsizing of equipment and automatic insertion through the taping package 2.0 0.2 1.3 0.1 0.65 0.65 1 3 2 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Symbol VR IF Topr Tstg Rating 35 100 -25 to +85 -55 to +150 Unit V mA C C 0.9 0.1 1 : Cathode 1 2 : Cathode 2 3 : Anode 1, 2 EIAJ : SC-70 Flat S-Mini Type Package (3-pin) Storage temperature Note) * : Maximum ambient temperature during operation Marking Symbol * MA3Z080D : M1X * MA3Z080E : M1Y Internal Connection 1 3 2 D 1 3 2 E I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Conditions Min Typ 0.01 0.92 0.9 0.65 Max 100 1.0 1.2 0.85 Unit nA V pF Note) 1 Each characteristic is a standard for individual diodes 2 Rated input/output frequency: 100 MHz 3 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.15 - 0.05 + 0.1 0.3 - 0 I Features 1 MA3Z080D, MA3Z080E IF V F 1 000 Ta = 25C 10 Band Switching Diodes CD VR f = 1 MHz Ta = 25C IR T a 100 VR = 33 V 5 3 2 10 1 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 100 Diode capacitance CD (pF) Forward current IF (mA) 10 1 0.5 0.3 0.2 1 0.1 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 0.01 0 20 40 60 80 100 120 140 160 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) rf IF 1.0 f = 100 MHz Ta = 25C rf f 1.0 IF = 2 mA Ta = 25C Forward dynamic resistance rf () 0.8 Forward dynamic resistance rf () 1 3 10 30 100 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 0 10 30 100 300 1 000 Forward current IF (mA) Frequency f (MHz) 2 |
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