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MJW3281A (NPN) MJW1302A (PNP)
Preferred Devices
Complementary NPN-PNP Silicon Power Bipolar Transistors
The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications.
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* Designed for 100 W Audio Frequency * Gain Complementary: * * *
Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A Low Harmonic Distortion High Safe Operation Area - 1 A/100 V @ 1 Second High fT - 30 MHz Typical
15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current - Continuous Collector Current - Peak (Note 1) Base Current - Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 230 230 5.0 230 15 25 1.5 200 1.43 -65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/C C 1 BASE Symbol RJC RJA Max 0.7 40 Unit C/W C/W MJW xxxxA LLYWW 3 EMITTER 1 2 3 TO-247 CASE 340K STYLE 3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
2 COLLECTOR MJWxxxxA = Device Code xxxx = 3281 OR 1302 LL = Location Code Y = Year WW = Work Week
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
ORDERING INFORMATION
Device MJW3281A MJW1302A Package TO-247 TO-247 Shipping 30 Units/Rail 30 Units/Rail
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2002
1
March, 2002 - Rev. 1
Publication Order Number: MJW3281A/D
MJW3281A (NPN) MJW1302A (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCB = 230 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non-repetitive) (VCE = 100 Vdc, t = 1 s (non-repetitive) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 7 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) (IC = 15 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 1 Adc) Base-Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) fT - Cob - - 600 30 - pF MHz hFE 50 50 50 50 50 45 12 VCE(sat) - VBE(on) - - 2 0.4 2 Vdc 125 - - - 115 - 35 200 200 200 200 200 - - Vdc - IS/b 4 1 - - - - Adc VCEO(sus) 230 ICBO - IEBO - - 5 - 50 Adc - - Adc Vdc Symbol Min Typ Max Unit
PNP MJW1302A
f T, CURRENT BANDWIDTH PRODUCT (MHz) 50 VCE = 10 V 40 30 20 10 0 TJ = 25C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 5V f T, CURRENT BANDWIDTH PRODUCT (MHz) 60 50 40 30 20 10 0 0.1 TJ = 25C ftest = 1 MHz
NPN MJW3281A
VCE = 10 V 5V
1.0 IC, COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain Bandwidth Product
Figure 2. Typical Current Gain Bandwidth Product
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MJW3281A (NPN) MJW1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJW1302A
1000 1000
NPN MJW3281A
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
25C TJ = 100C 100 -25C
TJ = 100C 100 -25C
25C
10
VCE = 20 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
VCE = 20 V 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
PNP MJW1302A
1000 1000
NPN MJW3281A
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
25C TJ = 100C 100 -25C
TJ = 100C 100 25C -25C
10
VCE = 5 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
VCE = 5 V 10 0.1 1.0 10 100
IC, COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
PNP MJW1302A
45 40 IC , COLLECTOR CURRENT (A) 35 30 25 20 15 10 5.0 0 0 TJ = 25C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 1.5 A IB = 2 A IC, COLLECTOR CURRENT (A) 45 40 35 30 25 20 15 10 5.0 0 0
NPN MJW3281A
1.5 A IB = 2 A 1A 0.5 A
1A 0.5 A
TJ = 25C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25
Figure 7. Typical Output Characteristics http://onsemi.com
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Figure 8. Typical Output Characteristics
MJW3281A (NPN) MJW1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJW1302A
3.0 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 2.5 2.0 1.5 1.0 0.5 0 0.1 TJ = 25C IC/IB = 10 VBE(sat) 2.5 2.0 1.5 VBE(sat) 1.0 0.5 0 TJ = 25C IC/IB = 10
NPN MJW3281A
VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1
VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
Figure 9. Typical Saturation Voltages PNP MJW1302A
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) TJ = 25C VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 10 10
Figure 10. Typical Saturation Voltages NPN MJW3281A
TJ = 25C VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID)
VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID)
0.1
0.1
1.0 10 IC, COLLECTOR CURRENT (AMPS)
100
0.1
0.1
1.0 10 IC, COLLECTOR CURRENT (AMPS)
100
Figure 11. Typical Base-Emitter Voltage
Figure 12. Typical Base-Emitter Voltage
PNP MJW1302A
100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100
NPN MJW3281A
10 1 Sec 1.0
10 mSec 100 mSec
10 1 Sec 1.0
10 mSec 100 mSec
0.1
1.0
100 10 VCE, COLLECTOR EMITTER (VOLTS)
1000
0.1
1.0
100 10 VCE, COLLECTOR EMITTER (VOLTS)
1000
Figure 13. Active Region Safe Operating Area
Figure 14. Active Region Safe Operating Area
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MJW3281A (NPN) MJW1302A (PNP)
There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 13 and 14 is based on TJ(pk) = 150C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
TYPICAL CHARACTERISTICS
PNP MJW1302A
10000 Cib 10000 Cib
NPN MJW3281A
C, CAPACITANCE (pF)
1000
Cob
C, CAPACITANCE (pF)
1000 Cob
100
TJ = 25C ftest = 1 MHz 0.1 1.0 10 100
100
TJ = 25C ftest = 1 MHz 0.1 1.0 10 100
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. MJW1302A Typical Capacitance
Figure 16. MJW3281A Typical Capacitance
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MJW3281A (NPN) MJW1302A (PNP)
PACKAGE DIMENSIONS
TO-247 CASE 340K-01 ISSUE C
-Q- TBM U A
1 2 3
-T- E -B- L R
DIM A B C D E F G H J K L P Q R U V
0.25 (0.010)
M
C
4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134
K
P
-Y-
V F D 0.25 (0.010)
M
H J
G
YQ
S
STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER
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MJW3281A (NPN) MJW1302A (PNP)
Notes
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MJW3281A (NPN) MJW1302A (PNP)
PowerBase is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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MJW3281A/D

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