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| Silicon Switching Diode Array SMBD 2837 SMBD 2838 For high-speed switching applications q Common cathode q Type SMBD 2837 SMBD 2838 Marking sA5 sA4 Ordering Code (tape and reel) Q68000-A8487 Q68000-A8437 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 s Total power dissipation, TS = 35 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VR VRM IF IFS Ptot Tj Tstg Values Unit SMBD 2837 SMBD 2838 30 35 50 75 200 4.5 250 150 - 65 ... + 150 mA A mW C V 600 460 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBD 2837 SMBD 2838 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 A Forward voltage IF = 10 mA IF = 50 mA IF = 100 mA Reverse current VR = 30 V VR = 50 V AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 measured at IR = 1 mA Test circuit for reverse recovery time CD trr - - - - 4 6 pF ns SMBD 2837 SMBD 2838 V(BR) SMBD 2837 SMBD 2838 VF - - - IR - - - - 100 100 - - - 855 1000 1200 nA 35 75 - - - - mV V Values typ. max. Unit Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Oscillograph: R = 50 tr = 0.35 ns C 1 pF Semiconductor Group 2 SMBD 2837 SMBD 2838 Forward current IF = f (TA*; TS) * Package mounted on epoxy Reverse current IR = f (TA) Forward current IF = f (VF) TA = 25 C Peak forward current IFM = f (t) TA = 25 C Semiconductor Group 3 SMBD 2837 SMBD 2838 Forward voltage VF = f (TA) Semiconductor Group 4 |
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