 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BUV298V NPN TRANSISTOR POWER MODULE s s s s s s s NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE Pin 4 not con nected APPLICATIONS: s MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V EBO IC I CM IB I BM P t ot T stg Tj V ISO June 1997 Parameter Collector-Emitter Voltage (V BE = -5 V) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp = 10 ms) Base Current Base Peak Current (t p = 10 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Insulation W ithstand Voltage (AC-RMS) Value 1000 450 7 50 75 10 16 250 -55 to 150 150 2500 Uni t V V V A A A A W o o V CEO(sus) Collector-Emitter Voltage (I B = 0) C C V 1/7 BUV298V THERMAL DATA R t hj-ca se R thc -h Thermal Resistance Junction-case Thermal Resistance Case-heats ink With Conductive Grease Applied Max Max 0.5 0.05 o C/W C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 ) Collector Cut-off Current (V BE = -5V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0.2 A L = 25 mH V c la mp = 450 V I C = 32 A I C = 32 A I C = 32 A I C = 32 A I C = 32 A V CE = 5 V I B = 6.4 A I B = 6.4 A I B = 6.4 A I B = 6.4 A T j = 100 C T j = 100 C 160 o o Min. Typ . Max. 0.4 2 0.4 2 2 Un it mA mA mA mA mA V T j = 100 C T j = 100 C o o V CEO(SUS) * Collector-Emitter Sustaining Voltage hFE V CE(sat ) V BE(s at) di C /dt DC Current G ain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Rate of Rise of On-state Collector 450 12 0.35 0.6 1 0.9 210 4.5 2.5 3.2 0.25 0.5 450 8 4 4.5 0.4 0.7 1.2 2 1.5 1.5 V V V V A/s V V s s s V V CC = 300 V R C = 0 tp = 3 s I B1 = 9.6 A T j = 100 o C V CC = 300 V R C = 9.3 o I B1 = 9.6 A Tj = 100 C V CC = 300 V R C = 9.3 I B1 = 9.6 A Tj = 100 o C I C = 32 A V BB = -5 V V c la mp = 450 L = 78 H VCC = 50 V R BB = 0.39 V I B1 = 6.4 A Tj = 100 o C * V CE (3 s)* Collector-Emitter Dynamic Voltage V CE (5 s)* Collector-Emitter * Dynamic Voltage ts tf tc V CEW Storage Time Fall T ime Cross-over T ime Maximum Collector Emitter Voltage Without Snubber I CW off = 48 A I B1 = 6.4 A V BB = -5 V V CC = 50 V L = 52 H R BB = 0.39 T j = 125 o C Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/7 BUV298V Safe Operating Areas Thermal Impedance Derating Curve Collector-emitter Voltage Versus base-emitter Resistance Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/7 BUV298V Reverse Biased SOA Foward Biased SOA Reverse Biased AOA Forward Biased AOA Switching Times Inductive Load Switching Times Inductive Load Versus Temperature 4/7 BUV298V Dc Current Gain Turn-on Switching Test Circuit (1) Fast electronics switch (2) Non-inductive load Turn-on Switching Waveforms Turn-off Switching Test Circuit Turn-off Switching Waveforms (1) Fast electronic switch (3) Fast recovery rectifier (2) Non-inductive loa d 5/7 BUV298V ISOTOP MECHANICAL DATA DIM. MIN. A B C D E F G H J K L M N O 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 G B A O N D E F J C K L M 6/7 H BUV298V Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 7/7 |
Price & Availability of BUV298V
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |