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| Datasheet File OCR Text: |
| TPV590 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV590 is a Common Emitter Device Designed for Class A High Linearity Amplifier Applications in TV Band IV-V Transmitters. PACKAGE STYLE 205 4L STUD FEATURES INCLUDE: * Gold Metallization * Emitter Ballasting * High Gain MAXIMUM RATINGS IC VCBO PDISS TJ T STG JC 300 mA 45 V 5.3 W @ TC = 25 OC -65 OC to +200 OC -65 OCto +200 OC 33 OC/W TC = 25 OC 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BV CBO BV CER BV EBO hFE COB PG VCE = 20 V IMD3 IC = 1.0mA IC = 10 mA IE = 1.0 mA VCE = 5 V VCB = 28 V VCE = 20 V TEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 45 45 3.5 UNITS V V V --- IC = 100 mA f = 1.0 MHz IC = 150 mA IC = 150 mA POUT = 0.5 W f = 860 MHz Pref = 0.5 W 20 2.0 13 14 3.0 pF dB Vision = -8dB Chroma = -16dB Sound =-10 dB -58 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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