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 Transistors with built-in Resistor
UN5154
Silicon PNP epitaxial planer transistor
Unit: mm
2.10.1
For digital circuits
0.425
1.250.1
0.425
2.00.2
0.65
q q
q
0.2
High forward current transfer ratio hFE. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing.
1.30.1
s Features
0.65
1
3
2
0.90.1
(Ta=25C)
Ratings -30 -30 -100 150 150 -55 to +150 Unit V V mA mW C C
R1(10k)
1 : Base 2 : Emitter 3 : Collector
0 to 0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
0.70.1
0.20.1
EIAJ : SC-70 S-Mini Type Package
Marking Symbol:
EV
Internal Connection
C
B
R2 (47k)
E
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency
(Ta=25C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = -10V, IE = 1mA, f = 200MHz Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 VCB = -30V, IE = 0 VCE = -30V, IB = 0 VEB = -3V, IC = 0 VCE = -10V, IC = -5mA IC = -50mA, IB = - 0.33mA VCC = -5V, VB = - 0.5V, RL = 1k VCC = -5V, VB = -2.5V, RL = 1k -30% 10 0.213 80 -4.9 - 0.2 +30% 80 - 0.5 -1.2 min -30 -30 - 0.1 - 0.5 - 0.1 typ max Unit V V A A mA -- V V V k -- MHz
0.15 -0.05
+0.1
0.3 -0
+0.1
1
Transistors with built-in Resistor
PT -- Ta
250
-200 Ta=25C -175
UN5154
IC -- VCE
-100
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA
IC/IB=10
Total power dissipation PT (mW)
Collector current IC (mA)
200
-150 -125 -100 -75 -50 -25
-10
150
-0.4mA -0.3mA -0.2mA
-1 25C Ta=75C -0.1 -25C
100
50
-0.1mA
0 0 20 40 60 80 100 120 140 160
0 0 -2 -4 -6 -8 -10 -12
-0.01 -1
-10
-100
-1000
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (mA)
hFE -- IC
300 6 Ta=75C 250 25C 200
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=-10V f=1MHz IE=0 Ta=25C -10000
IO -- VIN
VO=-5V Ta=25C
Forward current transfer ratio hFE
5
Output current IO (A)
-1000
-25C
4
150
3
-100
100
2
-10
50
1
0 -1
-10
-100
-1000
0 -1
-10
-100
-1 -0.4
-0.6
-0.8
-1
-1.2
-1.4
Collector current IC (mA)
Collector to base voltage VCB (V)
Input voltage VIN (V)
VIN -- IO
-100 VO= -0.2V Ta=25C
Input voltage VIN (V)
-10
-1
-0.1
-0.01 -0.1
-1
-10
-100
Output current IO (mA)
2


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