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| PROFET(R) BTS 410 G2 Smart Highside Power Switch Features * Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in ON-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 65 V 4.7 ... 42 V 220 m 1.8 A 2.7 A TO-220AB/5 5 1 Straight leads 5 5 1 Standard SMD Application * C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * Most suitable for inductive loads * Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS(R) technology. Fully protected by embedded protection functions. + V bb 3 Voltage source Overvoltage protection Current limit Gate protection V Logic Voltage sensor Charge pump Level shifter Rectifier Open load ESD Logic detection Limit for unclamped ind. loads OUT 2 IN Temperature sensor 5 Load 4 ST GND (R) PROFET Load GND 1 Signal GND 1) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistors in series with IN and ST connections, reverse load current limited by connected load. Semiconductor Group 1 03.97 BTS 410 G2 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 , RL= 6.6 , td= 400 ms, IN= low or high Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const. IL = 1.8 A, ZL = 2.3 H, 0 : Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Symbol Vbb VLoad dump4) Values 65 100 self-limited -40 ...+150 -55 ...+150 50 4.5 1 2 -0.5 ... +6 5.0 5.0 Unit V V A C W J kV V mA IL Tj Tstg Ptot EAS VESD VIN IIN IST Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min ---chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB5): Values typ max -2.5 -75 35 -Unit K/W 2) 3) 4) 5) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 2 BTS 410 G2 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics Tj=25 C: Tj=150 C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7, Tj =-40...+150C Turn-on time IN to 90% VOUT: to 10% VOUT: Turn-off time IN RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C Operating Parameters Operating voltage 6) Undervoltage shutdown On-state resistance (pin 3 to 5) IL = 1.6 A RON -- 190 390 220 440 -1 m IL(ISO) IL(GNDhigh) 1.6 -- 1.8 -- A mA s ton toff dV /dton -dV/dtoff 12 5 --- ----- 125 85 3 6 V/s V/s Tj =-40...+150C: Tj =25C: Tj =-40...+150C: Tj =-40...+150C: Undervoltage restart Undervoltage restart of charge pump see diagram page 11 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Tj =-40...+150C: Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: Overvoltage protection7) Ibb=4 mA Tj=-40...+25C: Standby current (pin 3) VIN=0 Tj= 150C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150C 6) 7) Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) 4.7 2.9 2.7 ---42 40 -65 ----- ----5.6 0.1 --0.1 70 10 18 -1 42 4.5 4.7 4.9 6.0 -52 ---15 25 20 2.1 V V V V V V V V V A A mA Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) Ibb(off) IL(off) IGND At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 6. Semiconductor Group 3 BTS 410 G2 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions Initial peak short circuit current limit (pin 3 to 5) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit shutdown current limit Tj = Tjt (see timing diagrams, page 10) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150C: IL= 1 A, Tj =-40..+150C: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 9) Diagnostic Characteristics Open load detection current (on-condition) IL(SCp) 4.0 3.5 2.0 -5.5 3.5 2.7 68 --10 -11 10 7.5 -73 75 --32 A IL(SCr) -A V C K V VON(CL) Tjt Tjt -Vbb 61 -150 --- Tj=-40 ..150C: IL (OL) 2 -150 mA Input and Status Feedback10) Input turn-on threshold voltage Tj =-40..+150C: Tj =-40..+150C: Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V On state input current (pin 2), VIN = 5 V Status invalid after positive input slope Tj=-40 ... +150C: (open load) Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +50 uA: ST low voltage Tj =-40...+150C, IST = +1.6 mA: VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST) 1.5 1.0 -1 10 300 --0.5 -25 -- 2.4 --30 70 1400 V V V A A s VST(high) VST(low) 5.0 -- 6 -- -0.4 V 8) 9) Add IST, if IST > 0, add IIN, if VIN>5.5 V Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 6). 10) If a ground resistor R GND is used, add the voltage drop across this resistor. Semiconductor Group 4 BTS 410 G2 Truth Table Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H 11) Status 412 B2 H H L H H L L H L L L13) L13) L L 410 D2 H H H L H L H H (L12)) L L L13) L13) L L 410 E2/F2 H H H L H L H H (L12)) L L H H H H 410 G2 H H H L H H H H (L12)) L L H H H H 410 H2 H H L H H L L H L L H H H H H L L H H L L L L L L X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11) 11) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for open load detection. 12) Low resistance short V to output may be detected in ON-state by the no-load-detection bb 13) No current sink capability during undervoltage shutdown Semiconductor Group 5 BTS 410 G2 Terms Ibb I IN 2 I ST V V bb R IN VST 4 ST GND 1 GND GND Inductive and overvoltage output clamp + V bb V Z 3 IN Vbb IL PROFET OUT 5 VON VON OUT PROFET I GND VOUT VON clamped to 68 V typ. Input circuit (ESD protection) R IN I Overvolt. and reverse batt. protection + V bb V Z2 R IN IN ESDZDI1 ZDI2 GND Logic I I R ST ST V Z1 PROFET GND R GND ZDI1 6 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode Signal GND may result in a drift of the zener voltage (increase of up VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND= 150 , RIN, to 1 V). RST= 15 k Status output +5V Open-load detection ON-state diagnostic condition: VON < RON * IL(OL); IN high R ST(ON) ST + V bb GND ESDZD ESD-Zener diode: 6 V typ., max 5 mA; RST(ON) < 250 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). ON VON OUT Logic unit Open load detection Semiconductor Group 6 BTS 410 G2 GND disconnect 3 IN Vbb PROFET 4 V bb V IN V ST ST GND 1 V GND V bb high 2 Vbb disconnect with charged external inductive load S IN 3 Vbb PROFET 4 ST GND 1 OUT 2 OUT 5 5 D Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. GND disconnect with GND pull up 3 IN Vbb PROFET 4 ST GND 1 V V bb IN ST V V OUT Inductive Load switch-off energy dissipation E bb E AS 2 5 IN V bb PROFET OUT ELoad = GND ST GND ZL EL { L RL ER Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with energized inductive load 3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT Energy stored in load inductance: EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is 2 EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, 5 with an approximate solution for RL > 0 : EAS= IL* L IL*RL *(V + |VOUT(CL)|)* ln (1+ ) |VOUT(CL)| 2*RL bb bb Normal load current can be handled by the PROFET itself. Semiconductor Group 7 BTS 410 G2 Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150C,TC = 150C const., Vbb = 12 V, RL = 0 Typ. transient thermal impedance chip case ZthJC = f(tp, D), D=tp/T ZthJC [K/W] 10 L [mH] 10000 1 1000 0.1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 100 1.5 1.75 2 2.25 2.5 2.75 3 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] IL [A] Semiconductor Group 8 BTS 410 G2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection with 150 in GND connection, protection against loss of ground Type Logic version BTS 412 B2 410D2 410E2 410F2 410G2 410H2 B X D X X E F X X X X X X X X X X X X X X X X X X X X X X X X -17) X X X X X X X X X X X X X X X -17) X X X X X X -17) X X X X X -17) X X X X X X X X X X X X X X X X X X X X X G H X X X X 307 308 Overtemperature protection with hysteresis Tj >150 C, latch function14)15) Tj >150 C, with auto-restart on cooling Short circuit to GND protection switches off when VON>3.5 V typ. and Vbb> 7 V typ14) (when first turned on after approx. 150 s) switches off when VON>8.5 V typ.14) (when first turned on after approx. 150 s) Achieved through overtemperature protection Open load detection in OFF-state with sensing current 30 A typ. in ON-state with sensing voltage drop across power transistor X Undervoltage shutdown with auto restart Overvoltage shutdown with auto Status feedback for overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage restart16) Status output type CMOS Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X X X X X X X X X X X X X X X X X X X X X Load current limit high level (can handle loads with high inrush currents) low level (better protection of application) Protection against loss of GND Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 15) With latch function. Reseted by a) Input low, b) Undervoltage 16) No auto restart after overvoltage in case of short circuit 17) Low resistance short V to output may be detected in ON-state by the no-load-detection bb 14) Semiconductor Group 9 BTS 410 G2 Timing diagrams Figure 1a: Vbb turn on: Figure 3a: Turn on into overload, Short circuit shut down by overtempertature, reset by cooling IN IN V bb IL I L(SCp) IL(SCr) V OUT ST open drain ST t proper turn on under all conditions Heating up may require several seconds, depending on external conditions t Figure 2a: Switching an inductive load Figure 4a: Overtemperature: Reset if Tj *) d(ST) ST V OUT V OUT IL I L(OL) t *) if the time constant of load is too large, open-load-status may occur T J t Semiconductor Group 10 BTS 410 G2 Figure 5a: Open load: detection in ON-state, turn on/off to open load Figure 6a: Undervoltage: IN IN V ST t d(ST) bb V bb(under) Vbb(u cp) Vbb(u rst) V OUT V OUT I L open t ST open drain t Figure 6b: Undervoltage restart of charge pump Figure 5b: Open load: detection in ON-state, open load occurs in on-state V on IN VON(CL) t d(ST OL1) ST t d(ST OL2) off-state on-state V bb(over) V OUT V V V bb(u rst) bb(o rst) bb(u cp) I normal L open normal V bb(under) V bb t charge pump starts at Vbb(ucp) =5.6 V typ. td(ST OL1) = tbd s typ., td(ST OL2) = tbd s typ Semiconductor Group 11 off-state BTS 410 G2 Figure 7a: Overvoltage: IN Vbb V ON(CL) Vbb(over) V bb(o rst) V OUT ST t Figure 9a: Overvoltage at short circuit shutdown: IN Vbb V bb(o rst) Output short to GND V OUT short circuit shutdown I L ST t Overvoltage due to power line inductance. No overvoltage autorestart of PROFET after short circuit shutdown. Semiconductor Group 12 BTS 410 G2 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 BTS 410 G2 Ordering code Q67060-S6104-A2 SMD TO-220AB/5, Opt. E3062 Ordering code BTS410G2 E3062A T&R: Q67060-S6104-A4 TO-220AB/5, Option E3043 Ordering code BTS 410 G2 E3043 Q67060-S6104-A3 Semiconductor Group 13 |
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