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| PROFET(R) BTS 430 K2 Smart Highside Power Switch * Clamp of negative voltage at output Vbb-VOUT Avalanche * Short-circuit protection Vbb (operation) * Current limitation Vbb (reverse) * Thermal shutdown RON * Diagnostic feedback IL(lim) * Open load detection in ON-state IL(ISO) * CMOS compatible input * Electrostatic Discharge (ESD) protection * Loss of ground and loss of Vbb protection1) * Reverse battery protection * Undervoltage and overvoltage shutdown with auto-restart and hysteresis Features Product Summary Clamp 50 4.5 ... 32 -32 38 36 11 V V V m A A Application * C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays and discrete circuits 5 General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic fault feedback, integrated in Smart SIPMOS(R) chip on chip technology. Fully protected by embedded protection functions. R bb + V bb 3 Voltage source Overvoltage protection Current limit Gate protection V Logic Voltage sensor Charge pump Level shifter Rectifier Open circuit ESD Logic detection Limit for unclamped ind. loads OUT 2 IN Temperature sensor 5 Load 4 ST Short circuit detection GND (R) PROFET Load GND 1 Signal GND 1) Additional external diode required for charged inductive loads Semiconductor Group 1 04.96 BTS 430 K2 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation Electrostatic discharge capability (ESD) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6... Symbol Vbb Values 54 self-limited -40 ...+150 -55 ...+150 125 1.7 2.0 -10 ... +16 5.0 5.0 1 75 Unit V A C W J kV V mA IL Tj Tstg Ptot EAS VESD VIN IIN IST Thermal resistance chip - case: chip - ambient: RthJC RthJA K/W Semiconductor Group 2 BTS 430 K2 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, see diagram page 7 Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 Slew rate on 10 to 30% VOUT, RL = 12 Slew rate off 70 to 40% VOUT, RL = 12 Tj=25 C: RON Tj=150 C: IL(ISO) IL(GNDhigh) ton toff dV /dton -dV/dtoff -9 -50 10 0.4 1 30 55 11 -160 ---- 38 70 -1 260 60 2 4 m A mA s V/s V/s Operating Parameters Tj =-40...+150C: Operating voltage Tj =-40...+150C: Undervoltage shutdown Tj =-40...+150C: Undervoltage restart Undervoltage restart of charge pump see diagram page 12 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Tj =-40...+150C: Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: Overvoltage protection2) Ibb=4 mA Standby current (pin 3) Tj=-40...+25C: VIN=0 Tj=150C: 3), V =5 Operating current (Pin 1) IN Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) 4.5 2.4 ---32 32 -50 ---6.5 0.2 --0.2 57 32 4.5 4.5 7.5 -46 ---- V V V V V V V V V A Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) Ibb(off) IGND ---- 12 18 1.1 25 60 -- mA 2) 3) see also VON(CL) in table protection functions and circuit diagram page 7. Meassured without load. Add IST, if IST > 0 Semiconductor Group 3 BTS 430 K2 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions Overload current limit (pin 3 to 5) Tj=-40...+150C IL(lim) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150C: td(SC) min value valid only, if input "low" time exceeds 30 s 19 80 36 -- 57 400 A s V V C K J Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation4), Tj Start = 150 C Vbb = 12 V: Vbb = 24 V: Reverse battery (pin 3 to 1) 5) Integrated resistor in Vbb line Diagnostic Characteristics Open load detection current (on-condition, ) VON(CL) VON(SC) Tjt Tjt EAS ELoad12 ELoad24 -Vbb Rbb -- 50 8.3 -10 -- ----1.7 1.3 1.0 32 -- -150 --- --- -120 V Leakage output current (off-condition) Tj=25..150C: IL (OL) Tj=-40 C: IL(off) 10 10 -- --6 500 600 -- mA A 4) 5) While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx. VON(CL) 2 ), see diagramm page 8 EAS= 1/2 * L * IL * ( VON(CL) - Vbb Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 ). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). Semiconductor Group 4 BTS 430 K2 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Input and Status Feedback6) Input resistance see circuit page 6 Input turn-on threshold voltage RI Tj =-40..+150C: VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST SC) -1.5 1.0 -1 10 80 350 10 --0.5 -25 200 -- -2.4 --30 50 400 1600 k V V V A s s Input turn-off threshold voltage Tj =-40..+150C: Input threshold hysteresis VIN = 0.4 V: Off state input current (pin 2) VIN = 3.5 V: On state input current (pin 2) Tj=-40 ... +150C: Status valid after input slope (short circuit) Tj=-40 ... +150C: Status valid after input slope (open load) Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: ST low voltage Tj =-40...+150C, IST = +1.6 mA: Status voltage while Vbb <2.4 V Tj=25 ... +150C: IST = 500 A Tj=40C: td(ST) VST(high) VST(low) VST 5.4 --- 6.1 --- 6.9 0.4 1.0 1.2 V V 6) If a ground resistor RGND is used, add the voltage drop across this resistor. Internal Z-diode typ. 6.1 V, see maximum ratings page 2, circuit page 7 Semiconductor Group 5 BTS 430 K2 Truth Table Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H 7) Status 432 D2 H H H L H L H H (L9)) L L L10) L10) L L 432 E2/F2 H H H L H L H H (L9)) L L H H H H 432 I2 H H L H H L L H L L L10) L10) L L 430 K2 H H H L 8) H L L H H L L L L L L L H H (L9)) L L L11) L11) L L Terms Ibb I IN 2 I ST V V bb R IN VST 4 ST GND 1 GND IGND VOUT IN 3 Vbb IL PROFET OUT 5 VON Status output +5V ST GND ESDZD ESD zener diodes are not designed for continuous current Short Circuit detection Fault Condition: VON > 8.3 V typ.; IN high Input circuit (ESD protection) + V bb R IN I V ON ESD-ZD I GND I I OUT Logic unit Short circuit detection ESD zener diodes are not designed for continuous current 7) 8) 9) 10) 11) Power Transistor off, high impedance The short circuit signal from last ON state is latched until next turn-on, see timing diagram page 10 Low resistance short Vbb to output may be detected by no-load-detection No current sink capability during undervoltage shutdown Current sink capability see page 5 Semiconductor Group 6 BTS 430 K2 Inductive and overvoltage output clamp + V bb V Z V GND disconnect 3 ON 2 OUT GND IN Vbb PROFET OUT 5 4 ST GND 1 V GND VON clamped to 50 V typ. V bb V I V S Overvolt. and reverse batt. protection + V bb Any kind of load. In case of Input=high VOUT VI - VIN(T+) Due to VGND >0, no VS = low signal available. V R IN Z R bb GND disconnect with GND pull up V IN Logic R ST ST GND OUT 3 IN Vbb PROFET OUT PROFET 2 R GND Signal GND 5 4 ST GND 1 Rbb 120 typ., VZ 57 V typ., , add RGND, RIN, RST for extended protection V bb V I V S V GND Open-load detection Fault Condition: VON < RON * IL(OL); IN high + V bb Any kind of load. If VGND > VI - VIN(T+) device stays off Due to VGND >0, no VS = low signal available. Vbb disconnect with charged inductive load ON VON 3 OUT high 2 IN Vbb PROFET OUT Logic unit Open load detection 5 4 ST GND 1 V bb Semiconductor Group 7 BTS 430 K2 3 high 2 IN Vbb PROFET 4 ST GND 1 PROFET OUT EL GND ER OUT Inductive Load switch-off energy dissipation E bb E AS 5 IN V bb ELoad = V bb ST Energy dissipated in PROFET EAS = Ebb + EL - ER. ELoad < EL, EL = 1/2 * L * I L 2 Semiconductor Group 8 BTS 430 K2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection Type Logic version BTS 432D2 432E2 432F2 432I2 430K2 D X X X X X X E F X I X X X K Overtemperature protection Tj >150 C, latch function12)13) Tj >150 C, with auto-restart on cooling Short-circuit to GND protection switches off when VON>8.3 V typ.12) (when first turned on after approx. 200 s) Open load detection in OFF-state with sensing current 30 A typ. in ON-state with sensing voltage drop across power transistor X X X X X X -14) X X X X X X X X X X X -14) X X X X X X -14) X X X X X X X X X X X X X X X X15) -14) X X X Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart Status feedback for overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage Status output type CMOS Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X X X X X X X Load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 13) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 14) Low resistance short V to output may be detected by no-load-detection bb 15) with status latch until next turn on 12) Semiconductor Group 9 BTS 430 K2 Timing diagrams Figure 1a: Vbb turn on, : Figure 2b: Switching an inductive load IN IN t d(bb IN) t ST *) d(ST) V bb V OUT A VOUT ST open drain t IL IL(OL) t *) if the time constant of load is too large, open-load-status may occur A in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s Figure 2a: Switching a lamp, Figure 3a: Turn on into short circuit, IN IN ST ST V *) OUT **) V OUT t I d(SC) L I t L t typ. td(SC) approx. 200s, *) depends on history, **) error signal latched until next turn on Semiconductor Group 10 BTS 430 K2 Figure 5a: Open load: detection in ON-state, turn on/off to open load Figure 3b: Short circuit while on: IN IN t ST ST *) V V OUT OUT d(ST) I I L L open t t *) error signal latched until next turn on Figure 4a: Overtemperature: Reset if Tj IN IN td(ST OL1) ST ST t d(OL ST2) V V OUT OUT I T J L normal open normal t t td(ST OL1) = tbd s typ., td(ST OL2) = tbd s typ Semiconductor Group 11 BTS 430 K2 Figure 6a: Undervoltage: Figure 7a: Overvoltage: IN IN Vbb V bb(under) Vbb V bb(u rst) V ON(CL) Vbb(over) V bb(o rst) VOUT VOUT ST t ST t Figure 6b: Undervoltage restart of charge pump VON [V] VON(CL) off off V bb(u rst) Vbb(over) Vbb(o rst) Vbb(u cp) V bb(under) on Vbb [V] charge pump starts at Vbb(ucp) 6.5 V typ. Semiconductor Group 12 BTS 430 K2 Package and Ordering Code All dimensions in mm Standard TO-220 AB/5 BTS430K2 Ordering code Q67060-S6200-A2 TO-220 AB/5, OPTION E3043 Ordering code BTS430K2 E3043 Q67060-S6200-A3 SMD TO-220 AB/5, OPTION E3122 BTS430K2 E3122A T&R: Ordering code Q67060-S6200-A4 Changed since 04/96 Case E3122A drawing changed Semiconductor Group 13 |
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