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PROFET(R) Preliminary Data Sheet BTS550P
Smart Highside High Current Power Switch
Features
* Overload protection * Current limitation * Short circuit protection * Overtemperature protection * Overvoltage protection (including load dump) * Clamp of negative voltage at output * Fast deenergizing of inductive loads 1) * Low ohmic inverse current operation * Reverse battery protection * Diagnostic feedback with load current sense * Open load detection via current sense * Loss of Vbb protection2) * Electrostatic discharge (ESD) protection
Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio
Vbb(AZ) 63 V VON(CL) 42 V Vbb(on) 5.0 ... 34 V RON 4.0 m IL(ISO) 97 A IL(SCp) 180 A IL : IIS 21000
TO-218AB/5
* Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads * Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads * Replaces electromechanical relays, fuses and discrete circuits
Application
5 1 Straight leads
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS(R) chip on chip technology. Fully protected by embedded protection functions.
3 & Tab
Voltage source Overvoltage protection Current limit Gate protection
OUT R bb + V bb
1, 5
IL
Voltage sensor
Charge pump Level shifter Rectifier
Limit for unclamped ind. loads Output Voltage detection Current Sense
2
IN
Load
ESD
Logic
I IN
Temperature sensor
IS
I IS
(R) PROFET
Load GND
VIN V IS
Logic GND
4
R IS
1) 2)
With additional external diode. Additional external diode required for energized inductive loads (see page 8).
Semiconductor Group
Page 1 of 15
1998-Aug-31
Preliminary Data Sheet BTS550P
Pin 1 2 3
Symbol OUT IN Vbb O I
Function Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!3) Input, activates the power switch in case of short to ground Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection instead of this pin4). Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 6) Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!3)
+
4 5
IS OUT
S O
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection, Tj,start =-40 ...+150C: Load current (short circuit current, see page 4) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI5) = 2 , RL = 0.54 , td = 200 ms, IN, IS = open or grounded Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const., IL = 20 A, ZL = 15 mH, 0 , see diagrams on page 9 Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 k
Symbol Vbb Vbb
Values 42 34 self-limited 90 -40 ...+150 -55 ...+150 360 3 4 +15 , -250 +15 , -250
Unit V V A V C W J kV mA
IL VLoad dump6) Tj Tstg Ptot EAS VESD IIN IIS
Current through input pin (DC) Current through current sense status pin (DC)
see internal circuit diagrams on page 6 and 7
3) 4) 5) 6)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Otherwise add up to 0.5 m (depending on used length of the pin) to the RON if the pin is used instead of the tab. RI = internal resistance of the load dump test pulse generator. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Semiconductor Group
Page 2
1998-Aug-31
Preliminary Data Sheet BTS550P Thermal Characteristics
Parameter and Conditions Thermal resistance Symbol min --chip - case: RthJC7) junction - ambient (free air): RthJA Values typ max -- 0.35 30 -Unit K/W
Electrical Characteristics
Parameter and Conditions
at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,5, see measurement IL = 20 A, Tj = 25 C: circuit page 6) VIN = 0, IL = 20 A, Tj = 150 C: IL = 120 A, Tj = 150 C: 8), I = 20 A, T = 150 C: Vbb = 6V L j 9) (Tab to pins 1,5) Nominal load current ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 C 10) Maximum load current in resistive range (Tab to pins 1,5) VON = 1.8 V, Tc = 25 C: see diagram on page 12 VON = 1.8 V, Tc = 150 C: 11) Turn-on time IIN to 90% VOUT: Turn-off time IIN to 10% VOUT: RL = 1 , Tj =-40...+150C Slew rate on 11) (10 to 30% VOUT ) RL = 1 ,Tj =25C Slew rate off 11) (70 to 40% VOUT ) RL = 1 ,Tj =25C Inverse Load Current Operation On-state resistance (Pins 1,5 to pin 3) VbIN = 12 V, IL = - 20 A
RON
--
RON(Static) IL(ISO) IL(Max) ton toff
dV/dton -dV/dtoff
-80
3.3 6.4 -9 97
4.0 7.8 8 12 --
m
A
350 180 140 40 ---
----0.45 0.55
--600 150 ---
A s
V/s V/s
Tj = 25 C: RON(inv) see diagram on page 9 Tj = 150 C: Nominal inverse load current (Pins 1,5 to Tab) IL(inv) 10 VON = -0.5 V, Tc = 85 C Drain-source diode voltage (Vout > Vbb) -VON IL = - 20 A, IIN = 0, Tj = +150C
-80 --
3.3 6.4 97 0.8
4.0 7.8 ---
m A V
7) 8) 9) 10) 11)
Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included! Decrease of Vbb below 10 V causes a slowly a dynamic increase of RON to a higher value of RON(Static). As long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 C. Not tested, specified by design. TJ is about 105C under these conditions. See timing diagram on page 13.
Semiconductor Group
Page 3
1998-Aug-31
Preliminary Data Sheet BTS550P
Parameter and Conditions
at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Operating Parameters Operating voltage (VIN = 0) 8, 12) Undervoltage shutdown 13) Undervoltage start of charge pump see diagram page 14 Overvoltage protection14) Tj =-40C: Ibb = 15 mA Tj = 25...+150C: Standby current Tj =-40...+25C: IIN = 0 Tj = 150C: Protection Functions Short circuit current limit (Tab to pins 1,5)
Vbb(on) VbIN(u) VbIN(ucp) VbIN(Z) Ibb(off)
5.0 2.0 3.5 60 62 ---
-3.0 4.5 -66 15 25
34 4.5 6.0 --25 50
V V V V A
Tc =-40C: IL(SCp) Tc =25C: Tc =+150C: Short circuit shutdown delay after input current positive slope, VON > VON(SC) td(SC)
min. value valid only if input "off-signal" time exceeds 30 s
VON = 12 V, time until shutdown max. 350 s
--120 80 --39 -150 --
170 180 170 -16.8 19.0 42 6 -10
-250 -350 --46.5 ----
A
s V V V C K
Output clamp 15) IL= 40 mA: -VOUT(CL) (inductive load switch off) IL= 20 A: Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. overvoltage) VON(CL) IL= 40 mA Short circuit shutdown detection voltage (pin 3 to pins 1,5) VON(SC) Thermal overload trip temperature Tjt Thermal hysteresis Tjt
12) 13) 14) 15)
If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u). For the voltage range 0..34 V the device is fully protected against overtemperature and short circuit. VbIN = Vbb - VIN see diagram on page 6. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V (typ.) the charge pump is not active and VOUT Vbb - 3 V. See also VON(CL) in circuit diagram on page 7. This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 7). If the diode is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.
Semiconductor Group
Page 4
1998-Aug-31
Preliminary Data Sheet BTS550P
Parameter and Conditions
at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Reverse Battery Reverse battery voltage 16) -Vbb On-state resistance (Pins 1,5 to pin 3) Tj = 25 C: RON(rev) Vbb = -12V, VIN = 0, IL = - 20 A, RIS = 1 k Tj = 150 C: Integrated resistor in Vbb line
----
-3.8 -120
32 4.6 9 --
V m
Rbb
Diagnostic Characteristics Current sense ratio, IL = 120 A,Tj =-40C: kILIS static on-condition, Tj =25C: kILIS = IL : IIS, Tj =150C: VON < 1.5 V17), IL = 20 A,Tj =-40C: VIS 4.0 V Tj =150C: see diagram on page 11 IL = 12 A,Tj =-40C: Tj =25C: Tj =150C: IL = 6 A,Tj =-40C: Tj =25C: Tj =150C: IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads): Sense current saturation Current sense leakage current
19 000 19 000 18 400 19 300 19 500 18 500 19 000 19 000 17 500 17 000 17 000 17 000 6.5 ---60 62
21 100 20 900 19 600 22 500 21 500 20 500 23 000 22 500 20 000 26 000 23 800 20 000 --2 --66
22 500 22 500 22 000 25 500 24 800 23 000 27 500 26 000 22 000 42 000 33 000 26 000 -0.5 -500 --mA A s V
IIS,lim
IIN = 0, VIS = 0: IIS(LL) VIN = 0, VIS = 0, IL 0: IIS(LH) Current sense settling time18) ts(IS) Overvoltage protection Tj =-40C: VbIS(Z) Ibb = 15 mA Tj = 25...+150C:
Input Input and operating current (see diagram page 12) IIN(on)
IN grounded (VIN = 0)
---
0.8 --
1.5 80
mA A
Input current for turn-off19)
IIN(off)
16)
17)
18) 19)
The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (I IN = I IS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 8. If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see IIS,lim . Not tested, specified by design. We recommend the resistance between IN and GND to be less than 0.5 k for turn-on and more than 500k for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb.
Semiconductor Group
Page 5
1998-Aug-31
Preliminary Data Sheet BTS550P
Parameter and Conditions
at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Truth Table
Input current level Normal operation Very high load current Currentlimitation Short circuit to GND Overtemperature Short circuit to Vbb Open load Negative output voltage clamp Inverse load current L H H H L H L H L H L H L L H Output level L H H H L L L L H H Z21) H L H H Current Sense IIS 0 nominal IIS, lim 0 0 0 0 0 0 VON(Fold back) if VON>VON(SC), shutdown will occure Remark
L = "Low" Level H = "High" Level Overtemperature reset by cooling: Tj < Tjt (see diagram on page 14) Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 13)
Terms
I bb VbIN 3 Vbb IL V bb RIN V
IN
RON measurement layout
VON
5.5 mm
2
IN PROFET IS
OUT 1,5
VbIS I IN VIS
4
Vbb force contacts
I IS DS R IS VOUT
Out Force Sense contacts contacts (both out pins parallel)
Two or more devices can easily be connected in parallel to increase load current capability.
20) 21)
Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS. Power Transistor "OFF", potential defined by external impedance.
Semiconductor Group
Page 6
1998-Aug-31
Preliminary Data Sheet BTS550P
Input circuit (ESD protection)
V bb
Short circuit detection
Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...350 s).
+ Vbb
V V bIN
ZD
R bb
VON
Z,IN
IN I
IN
OUT Logic unit Short circuit detection
V IN
Inductive and overvoltage output clamp
+ Vbb VZ1 VON
When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 66 V (typ).
Current sense status output
Vbb R bb
ZD IS
VZG
OUT
PROFET
IS DS VOUT
V
Z,IS
I IS R
IS
VIS
VON is clamped to VON(Cl) = 42 V typ. At inductive load switch-off without DS, VOUT is clamped to VOUT(CL) = -19 V typ. via VZG. With DS, VOUT is clamped to Vbb VON(CL) via VZ1. Using DS gives faster deenergizing of the inductive load, but higher peak power dissipation in the PROFET.
VZ,IS = 66 V (typ.), RIS = 1 k nominal (or 1 k /n, if n Overvoltage protection of logic part devices are connected in parallel). IS = IL/kilis can be driven only by the internal circuit as long as Vout - VIS > + Vbb 5 V. If you want to measure load currents up to IL(M), R bb V Vbb - 5 V Z,IN V Z,IS RIS should be less than . IL(M) / Kilis R IN Note: For large values of RIS the voltage VIS can IN Logic reach almost Vbb. See also overvoltage protection. V OUT If you don't use the current sense output in your application, you can leave it open. PROFET
IS
R IS
RV
Signal GND
V Z,VIS
Rbb = 120 typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 k nominal. Note that when overvoltage exceeds 71 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used.
Semiconductor Group
Page 7
1998-Aug-31
Preliminary Data Sheet BTS550P
Reverse battery protection
- V bb
Rbb
Version b:
V
IN
bb IN
Vbb PROFET OUT
OUT
R IN
Logic
IS
Power Transistor
IS
DS
V Zb
RL RV
Power GND
D
Signal GND
RIS
Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Version c: Sometimes a neccessary voltage clamp is given by non inductive loads RL connected to the same switch and eliminates the need of clamping circuit:
RV 1 k, RIS = 1 k nominal. Add RIN for reverse battery protection in applications with Vbb above 1 1 1 16 V16); recommended value: + + = RIN RIS RV 0.1A 1 0.1A if DS is not used (or = if DS RIN |Vbb| - 12V |Vbb| - 12V is used). To minimize power dissipation at reverse battery operation, the summarized current into the IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS and RV.
V
bb IN
Vbb PROFET OUT
RL
IS
Vbb disconnect with energized inductive load
Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 72 V or VZb < 30 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. Version a:
V
bb IN
V
bb OUT
PROFET
IS
V ZL
Semiconductor Group
Page 8
1998-Aug-31
Preliminary Data Sheet BTS550P
Inverse load current operation
Energy stored in load inductance:
EL = 1/2*L*I L
V bb
+ IN Vbb
2
- IL
PROFET IS OUT
While demagnetizing load inductance, the energy dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)*iL(t) dt,
with an approximate solution for RL > 0 : IL* L IL*RL (Vbb + |VOUT(CL)|) ln (1+ |V ) 2*RL OUT(CL)|
-
V OUT + IIS
-
V IN V IS
EAS=
R IS
The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. If the device is switched on (VIN = 0), this power dissipation is decreased to the much lower value RON(INV) * I2 (specifications see page 3). Note: Temperature protection during inverse load current operation is not possible!
Maximum allowable load inductance for a single switch off
L = f (IL ); Tj,start = 150C, Vbb = 12 V, RL = 0
L [mH] 10000
1000
Inductive load switch-off energy dissipation
E bb E AS V V bb ELoad bb i L(t) IN PROFET OUT EL
100
10
IS I ZL
{
L
1 0 5 10 15 20
IN
RIS
RL
ER
IL [A]
Semiconductor Group
Page 9
1998-Aug-31
Preliminary Data Sheet BTS550P
Options Overview Type BTS 550P 555 650P
X X X X X23) X X X23) X X
Overtemperature protection with hysteresis Tj >150 C, latch function22) Tj >150 C, with auto-restart on cooling Short circuit to GND protection
switches off when VON>6 V typ. (when first turned on after approx. 180 s)
Overvoltage shutdown Output negative voltage transient limit
to Vbb - VON(CL) to VOUT = -19 V typ
22)
23)
Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). Can be "switched off" by using a diode DS (see page 7) or leaving open the current sense output.
Semiconductor Group
Page 10
1998-Aug-31
Preliminary Data Sheet BTS550P
Characteristics
Current sense versus load current: IIS = f(IL) IIS [mA]
7
Current sense ratio: KILIS = f(IL), TJ = 25 C kilis
34000 32000
6
30000
5
28000
4
max
26000
max 3 min 2
20000 24000 22000
typ
1
18000 16000
min
0 0 20 40 60 80 100 120
0
20
40
60
80
100
120
IL [A]
Current sense ratio: KILIS = f(IL), TJ = -40 C Kilis
42000 40000 38000 36000 34000 32000
24000 26000 28000
IL [A]
Current sense ratio: KILIS = f(IL), TJ = 150 C Kilis
30000
30000 28000
22000
max max
26000 24000 22000 20000 18000 16000 0 20 40
max
20000
typ typ typ
typ
18000
min
16000
min min
60
80
100
120
0
20
40
60
80
100
120
IL [A]
IL [A]
Semiconductor Group
Page 11
1998-Aug-31
Preliminary Data Sheet BTS550P
Typ. current limitation characteristic IL = f (VON, Tj ) Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN
IL [A]
IIN [mA]
1.6
700
1.4
600
1.2
500
400
VON > VON(SC) only for t < td(SC) (otherwise immediate
1 0.8
300
TJ = 25C
200
0.6 0.4
100
TJ = -40C
TJ = 150C
0.2 0 0 20 40 60 80
0 0
VON(FB)
5
10
15
20
VON [V] In case of VON > VON(SC) (typ. 6 V) the device will be switched off by internal short circuit detection. Typ. on-state resistance RON = f (Vbb, Tj ); IL = 20 A; VIN = 0
VbIN [V]
RON [mOhm]
10 9 8 7 6 5 4 3 2 1 0 0 5 10 15 40 20 85C 25C -40C Tj = 150C static dynamic
Vbb [V]
Semiconductor Group
Page 12
1998-Aug-31
Preliminary Data Sheet BTS550P
Timing diagrams
Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2b: Switching an inductive load:
IIN
IIN
VOUT
90% t on dV/dton 10% t off
dV/dtoff
VOUT
IL
tslc(IS)
t slc(IS)
IL
Load 1
Load 2
IIS
t t
IIS
tson(IS)
t soff(IS)
The sense signal is not valid during a settling time after turn-on/off and after change of load current.
Figure 3a: Short circuit: shut down by short circuit detection, reset by IIN = 0.
Figure 2a: Switching motors and lamps:
IIN
IIN IL IL(SCp) VOUT td(SC)
IIL
IIS VOUT>>0 VOUT=0 t
IIS
t
Shut down remains latched until next reset via input.
Sense current saturation can occur at very high inrush currents (see IIS,lim on page 5).
Semiconductor Group
Page 13
1998-Aug-31
Preliminary Data Sheet BTS550P
Figure 4a: Overtemperature Reset if TjIIN
IIS
VOUT
Auto Restart
Tj
t
Figure 6a: Undervoltage restart of charge pump, overvoltage clamp
VOUT
VIN = 0
6
4
dynamic, short Undervoltage not below VbIN(u)
2
IIN = 0
VON(CL)
0 0
V bIN(u)
4
V bIN(ucp)
V bb
Semiconductor Group
Page 14
V ON(CL)
1998-Aug-31
Preliminary Data Sheet BTS550P
Package and Ordering Code
All dimensions in mm
TO-218AB/5 Option E3146 Ordering code
E3146 Q67060-S6952A3
Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, D-81541 Munchen (c) Siemens AG 1998. All Rights Reserved Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing: Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components24) of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems25) with the express written approval of the Semiconductor Group of Siemens AG.
24) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 25) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.
Semiconductor Group
Page 15
1998-Aug-31

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