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| Bulletin I27119 rev. B 06/02 GA100TS60SQ "HALF-BRIDGE" IGBT INT-A-PAK Features * Standard Speed IGBT * * * * * Generation 4 Standard Speed IGBT Technology QuietIR Antiparallel diodes with Fast Soft recovery Very Low Conduction Losses Industry Standard Package Aluminum Nitride DBC UL approved (file E78996) VCES = 600V IC = 220A DC VCE(on) typ. = 1.39V @ IC = 200A TJ = 25C Benefits * * * * * Optimized for high current inverter stages (AC TIG welding machines) Direct mounting to heatsink Hard switching operation frequency up to 1 KHz Very low junction-to-case thermal resistance Low EMI INT-A-PAK Absolute Maximum Ratings Parameters VCES IC ICM ILM VGE VISOL PD Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 130C Max 600 220 100 440 440 20 2500 780 312 Units V A V W www.irf.com 1 GA100TS60SQ Bulletin I27119 rev. B 06/02 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameters VBRCES V CE(on) Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min Typ Max Units Test Conditions 600 1.11 1.39 1.08 1.21 1.17 6 1 1.21 1.16 10 1.28 1.24 250 nA mA V V V GE = 0V, I C = 1mA V GE = 15V, I C = 100A IC = 200A V GE = 15V, I C = 100A, T J = 125C I C = 0.25mA V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, T J = 125C I C = 100A, V GE = 0V I C = 100A, V GE = 0V, T J = 125C V GE = 20V V GE(th) I CES V FM I GES Gate Threshold Voltage Collector-to-Emiter Leakage Current Diode Forward Voltage drop Gate-to-Emitter Leakage Current 3 Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameters Qg Qge Qgc tr tf Eon Eoff Ets Eon Eoff Ets Cies Coes Cres trr Irr Qrr Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Rise Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Current Diode Recovery Charge Min Typ 640 108 230 0.45 1.0 4 23 27 6 35 41 Max Units Test Conditions 700 120 300 s 6 29 35 12 40 52 mJ nC IC = 100A VCC = 400V VGE = 15V IC = 100A, VCC = 480V, VGE = 15V Rg = 15 mJ IC = 100A, VCC = 480V, VGE = 15V Rg = 15, TJ = 125C 16250 1040 190 440 480 15 18 3400 4000 pF ns A nC VGE = 0V VCC = 30V f = 1.0 MHz IF = 50A, d IF/dt = 50A/s VRR = 200V TJ = 125C Thermal- Mechanical Specifications Parameters TJ TSTG RthJC RthCS T Operating Junction Temperature Range Storage Temperature Range Junction-to-Case Case-to-Sink Mounting torque Weight per Switch Per Diode Per Module Case to heatsink Case to terminal 1, 2, 3 185 0.1 4 3 Nm g Min - 40 - 40 Typ Max 150 125 0.16 0.48 Units C C/ W 2 www.irf.com GA100TS60SQ Bulletin I27119 rev. B 06/02 1000 Vge = 15V IC, Collector-to-Emitter Current (A) 1000 IC , Collector-to-Emitter Current (A) T J = 125C 100 T J = 25C 100 10 Vce = 10V 380s PULSE WIDTH Tj = 25C Tj = 125C 10 0.6 0.8 1 1.2 1.4 1.6 1.8 1 5.5 6.5 7.5 8.5 VCE, Collector-to-Emitter Voltage (V) Fig. 1 - Typical Output Characteristics VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Transfer Characteristics 240 200 160 120 80 40 0 25 VCE, Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) 1.5 I C = 200A 1.3 1.1 I C = 100A I = 50A 0.9 50 75 100 125 150 0.7 25 50 75 100 125 150 TC, Case Temperature (C) Fig. 3 - Maximum Collector Current vs. Case Temperature TJ, Junction Temperature (C) Fig. 4 - Typical Collector-to-Emitter Voltage vs. Junction Temperature www.irf.com 3 GA100TS60SQ Bulletin I27119 rev. B 06/02 20 VGE, Gate-to-Emitter Voltage (V) 35 Vcc = 400V Ic = 100A Switching Losses (mJ) Tj = 25C, Vce = 480V 30 Vge = 15V, Ic = 100A 15 25 20 15 10 5 Eoff 10 Eon 5 0 0 100 200 300 400 500 600 700 QG, Total Gate Charge (nC) Fig. 5 - Typical Gate Charge vs. Gate-toEmitter Voltage 0 10 20 30 40 50 RG, Gate Reistance () Fig. 6 - Typical Switching Losses vs Gate Resistance 60 50 Switching Losses (mJ) Tj = 125C Vce = 480V Vge = 15V Rge = 15 Eoff 40 30 20 10 0 0 40 80 120 160 IC, Collector-to-Emitter Current (A) Eon Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current 4 www.irf.com GA100TS60SQ Bulletin I27119 rev. B 06/02 1000 500 Vr = 200V Instantaneous Forward Current - I F (A) 450 400 350 300 250 Tj = 25C If = 50A, Tj = 25C If = 50A, Tj = 125C 100 Tj = 125C t rr (ns) 200 10 0.6 0.8 1 1.2 1.4 1.6 150 0 200 400 600 800 1000 dif /dt - A/s Fig. 9 - Typical Reverse Recovery vs. dif /dt Forward Voltage Drop- VFM (V) Fig. 8 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 140 Vr = 200V 20 Vr = 200V 120 100 I RRM (A) If = 50A, Tj = 125C Q RR (nC) 15 I F = 50A, Tj = 125C 80 60 40 20 0 0 200 400 600 800 1000 dif /dt - A/s Fig. 10 - Typical Reverse Recovery Current vs. dif /dt 10 If = 50A, Tj = 25C 5 I F = 50A, Tj = 25C 0 0 200 400 600 800 1000 dif /dt - A/s Fig. 11 - Typical Stored Charge vs. dif /dt www.irf.com 5 GA100TS60SQ Bulletin I27119 rev. B 06/02 Outline Table Electrical Diagram Dimensions in millimeters Note: unused terminals are not assembled in the package 6 www.irf.com GA100TS60SQ Bulletin I27119 rev. B 06/02 Ordering Information Table Device Code GA 100 1 2 T 3 S 4 60 5 S 6 Q 7 1 2 3 4 5 6 7 - Essential Part Number IGBT modules Current rating Int-A-Pak Voltage Code Speed/ Type Diode Type (60 = 600V) (S = Standard Speed IGBT) (Moat Fast S02) (100 = 100A) Circuit Configuration (T = Half Bridge) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 06/02 www.irf.com 7 |
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