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| STP5NC70Z - STP5NC70ZFP STB5NC70Z - STB5NC70Z-1 N-CHANNEL 700V - 1.8 - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHTMIII MOSFET TYPE STP5NC70Z/FP STB5NC70Z/-1 s s VDSS 700V 700V RDS(on) <2 <2 ID 4.6 A 4.6 A 1 3 s s s TYPICAL RDS(on) = 1.8 EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED DPAK 1 2 3 TO-220 TO-220FP 12 3 DESCRIPTION The third generation of MESH OVERLAYTM Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s IPAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15K) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature --65 to 150 150 4.6 2.9 18.4 100 0.8 50 3 3 2000 Value STP(B)5NC70Z(-1) 700 700 25 4.6(*) 2.9(*) 18.4 35 0.32 STP5NC70ZFP V V V A A A W W/C mA KV V/ns V C C Unit (1)Pulse width limited by safe operating area December 2002 (q )ISD 4.5A, di/dt 100A/s, VDD V(BR)DSS, T j T JMAX (*).Limited only by maximum temperature allowed 1/12 STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 THERMAL DATA TO-220 / DPAK IPAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.25 62 300 TO-220FP 3.57 C/W C/W C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 4.6 200 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 A, VGS = 0 ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V Min. 700 0.8 1 50 10 Typ. Max. Unit V V/C A A A BVDSS/TJ Breakdown Voltage Temp. Coefficient IDSS IGSS Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 10V, ID = 2.4 A Min. 3 Typ. 4 1.8 Max. 5 2.0 Unit V DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 2.4A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 4 1200 98 9 Max. Unit S pF pF pF 2/12 STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 350 V, ID = 2.5 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 560V, ID = 5A, VGS = 10V Min. Typ. 22 10 27 8 10 36.4 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 560V, ID = 5 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 13 14 22 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4.6 A, VGS = 0 ISD = 5 A, di/dt = 100A/s, VDD = 100V, Tj = 150C (see test circuit, Figure 5) 570 4.4 15.5 Test Conditions Min. Typ. Max. 4.6 18.4 1.6 Unit A A V ns C A GATE-SOURCE ZENER DIODE Symbol BVGSO T Rz Parameter Gate-Source Breakdown Voltage Voltage Thermal Coefficient Dynamic Resistance Test Conditions Igs= 1mA (Open Drain) T=25C Note(3) ID = 50 mA, VGS = 0 Min. 25 1.3 90 Typ. Max. Unit V 10-4/C Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. VBV = T (25-T) BVGSO(25) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 3/12 STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 Safe Operating Area For TO-220/DPAK/IPAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220/DPAK/IPAK Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics 4/12 STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/12 STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 Source-drain Diode Forward Characteristics 6/12 STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/12 STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 D F1 G1 E Dia. L5 L7 L6 L4 P011C L9 8/12 F2 F G H2 STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D F G1 E H F2 123 L2 L4 G 9/12 STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 TO-262 (I2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D e E L L1 L2 4.4 2.49 0.7 1.14 0.45 1.23 8.95 2.4 10 13.1 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 2.7 10.4 13.6 3.78 1.4 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055 DIM. A C2 B2 B E L1 L2 D L P011P5/E 10/12 e A1 C STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 TO-263 (D2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D E G L L2 L3 4.4 2.49 0.7 1.14 0.45 1.21 8.95 10 4.88 15 1.27 1.4 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 10.4 5.28 15.85 1.4 1.75 MIN. 0.173 0.098 0.027 0.044 0.017 0.047 0.352 0.393 0.192 0.590 0.050 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.409 0.208 0.624 0.055 0.068 DIM. D A C C2 DET AIL "A" DET AIL "A" A1 B2 B E G L2 L L3 P011P6/E A2 11/12 STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 12/12 |
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