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| MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE TM130RZ/EZ/GZ-24,-2H * IT (AV) * IF (AV) * VRRM * * * * Average on-state current .......... 130A Average forward current .......... 130A Repetitive peak reverse voltage .... 1200/1600V VDRM Repetitive peak off-state voltage .... 1200/1600V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 (RZ Type) APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm (RZ) 6.5 M8 A1 20 K1 K2 A2 40 CR A1 K1 A2 K2 SR K1 G1 K1 G1 6 18 30 68.5 16 32 150 18 30 68.5 16 (EZ) CR A1 K1 K2 Tab#110, t=0.5 23 9 32 39 A2 SR K1 G1 LABEL 7 (GZ) CR A1 K1 K2 SR A2 K1 G1 (RZ Type) (Bold line is connective bar.) Feb.1999 MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class 24 1200 1350 960 1200 1350 960 2H 1600 1700 1280 1600 1700 1280 Unit V V V V V V Symbol IT (RMS), IF (RMS) IT (AV), IF (AV) ITSM, IFSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS current Average current Surge (non-repetitive) current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M8 Conditions Ratings 205 Unit A A A A2s A/s W W V V A C C V N*m kg*cm N*m kg*cm g Single-phase, half-wave 180 conduction, TC=78C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=1.0A, Tj=125C 130 2600 2.8 x 104 100 10 3.0 10 5.0 4.0 -40~125 -40~125 2500 8.83~10.8 90~110 1.96~3.92 20~40 300 -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM IDRM VTM, VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) -- Parameter Repetitive peak reverse current Repetitive peak off-state current Forward voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=125C, VRRM applied Tj=125C, VDRM applied Tj=125C, ITM=IFM=390A, instantaneous meas. Tj=125C, VD=2/3VDRM Tj=25C, VD=6V, RL=2 Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, RL=2 Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. -- -- -- 500 -- 0.25 15 -- -- 10 Typ. -- -- -- -- -- -- -- -- -- -- Max. 30 30 1.5 -- 3.0 -- 100 0.22 0.1 -- Unit mA mA V V/s V V mA C/ W C/ W M Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item Thyristor Diode -- -- -- -- VRRM VRSM VR (DC) VDRM VDSM VD (DC) IT (RMS) IF (RMS) IT (AV) IF (AV) ITSM IFSM I2t di/dt Item Thyristor Diode PGM PG (AV) VFGM IFGM Tj Tstg -- -- -- -- ELECTRICAL CHARACTERISTICS Item Thyristor Diode -- -- -- -- -- IRRM IDRM VTM VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 4 7 5 3 2 CURRENT (A) 10 3 7 5 3 2 10 2 7 5 3 2 10 1 0.6 3200 Tj=125C SURGE (NON-REPETITIVE) CURRENT (A) 2800 2400 2000 1600 1200 800 400 1.0 1.4 1.8 2.2 0 1 23 5 7 10 20 30 50 70100 RATED SURGE (NON-REPETITIVE) CURRENT FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLE AT 60Hz) GATE CHARACTERISTICS 4 3 2 10 1 GATE VOLTAGE (V) 7 5 3 2 VGT=3.0V PG(AV)= 3.0W VFGM=10V PGM=10W TRANSIENT THERMAL IMPEDANCE (C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.25 0.20 0.15 10 0 7 5 IGT= 100mA 3 2 10 -1 VGD=0.25V IFGM=4.0A 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA) Tj=25C 0.10 0.05 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) Feb.1999 MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) AVERAGE POWER DISSIPATION (W) 200 120 160 90 120 =30 80 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) 150 140 CASE TEMPERATURE (C) 130 120 110 100 90 80 70 60 50 0 40 80 120 160 200 =30 60 90 120 180 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 180 60 40 0 0 40 80 120 160 200 AVERAGE CURRENT (A) AVERAGE CURRENT (A) AVERAGE POWER DISSIPATION (W) 400 MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) 130 CASE TEMPERATURE (C) 120 110 100 90 80 70 60 =30 90 180 60 120 270 DC 80 120 160 200 240 280 320 AVERAGE CURRENT (A) 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 320 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT DC 240 160 =30 80 60 270 180 120 90 0 0 40 80 120 160 200 50 0 40 AVERAGE CURRENT (A) Feb.1999 |
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