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| TP0202K Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) -30 30 rDS(on) (W) 1.4 @ VGS = -10 V 3.5 @ VGS = -4.5 V VGS(th) (V) -1.3 to -3.0 -1.3 to -3.0 ID (mA) -385 -240 Qg (Typ) 1000 FEATURES D D D D D D High-Side Switching Low On-Resistance: 1.2 (typ) Low Threshold: -2.0 V (typ) Fast Swtiching Speed: 14 ns (typ) Low Input Capacitance: 31 pF (typ) Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Easily Driven Without Buffer APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply Converter Circuits D Solid State Relays TO-236 (SOT-23) G 1 Ordering Information: TP0202K-T1 TP0202K-T1--E3 (Lead (Pb)-Free) 3 S 2 Top View D Marking Code: 2Kwll 2K = Part Number Code for TP0202K w = Week Code ll = Lot Traceability ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulse Drain Currentb Power Dissipationa Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range Notes a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71609 S-41777--Rev. D, 04-Oct-04 www.vishay.com TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM PD Limit -30 "20 -385 -280 -750 350 185 350 -55 to 150 Unit V mA mW _C/W _C RthJA TJ, Tstg 1 TP0202K Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Gate Body Leakage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VGS = 0 V, ID = -100 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "5 V VDS = 0 V, VGS = "10 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 85_C VDS = -10 V, VGS = -10 V VGS = -4.5 V, ID = -50 mA VGS = -10 V, ID = -500 mA VDS = -5 V, ID = -200 mA IS = -250 mA, VGS = 0 V -500 2.1 1.25 315 -1.2 3.5 1.4 -30 -1.3 -38 -2 -3.0 "50 "300 -100 -10 mA mA W mS V nA V Symbol Test Condition Min Typ Max Unit Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On Resistance Drain Source On-Resistancea Forward Transconductancea Diode Forward Voltagea Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -15 V, VGS = 0 V, f = 1 MHz VDS = -16 V, VGS = -10 V, ID ^ -200 mA 1000 225 175 31 11 4 p pF p pC Switchingb Turn-On Turn On Time td(on) tr td(off) tf VDD = -15 V, RL = 75 W 15 ID ^ -200 mA, VGEN = -10 V, RG = 6 W 9 6 30 20 ns Turn-Off Turn Off Time Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71609 S-41777--Rev. D, 04-Oct-04 TP0202K Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. Output Characteristics 1.6 1.4 I D - Drain Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS = 10 V 8V 7V 6V 5.5 V 5V 4.5 V 4V 3.5 V 3V I D - Drain Current (mA) 1200 1000 Transfer Characteristics TJ = -55_C 800 600 400 200 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) 25_C 125_C On-Resistance vs. Gate-Source Voltage 20 14 12 10 8 6 4 2 0 0 4 8 12 16 20 0 On-Resistance vs. Drain Current r DS(on) - On-Resistance ( W ) 16 VGS = 4.5 V 12 8 VGS = 10 V r DS(on) - On-Resistance ( W ) VGS = 4.5 V VGS = 10 V 4 0 VGS - Gate -to-Source Voltage (V) 50 VGS = 0 V f = 1 MHz 40 C - Capacitance (pF) Ciss 30 200 400 600 800 1000 ID - Drain Current (mA) Capacitance 16 V GS - Gate-to-Source Voltage (V) 14 12 ID = 200 mA Gate Charge VDS = 16 V 10 8 6 4 2 VDS = 10 V 20 Coss 10 Crss 0 0 4 8 12 16 20 0 0 200 400 600 800 1000 1200 1400 1600 Qg - Total Gate Charge (pC) VDS - Drain-to-Source Voltage (V) Document Number: 71609 S-41777--Rev. D, 04-Oct-04 www.vishay.com 3 TP0202K Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. 1.8 1.6 rDS(on) - On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 1 -25 0 25 50 75 100 125 TJ - Junction Temperature (_C) 150 0.00 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 1.5 VGS = 4.5 V @ 50 mA VGS = 10 V @ 200 mA On-Resistance vs. Junction Temperature 1000 Source-Drain Diode Forward Voltage VGS = 0 V I S - Source Current (A) 100 TJ = 150_C 10 TJ = 25_C TJ = -55_C 0.5 0.4 V GS(th) Variance (V) 0.3 Threshold Voltage Variance Over Temperature 1000 IGSS vs. Temperature VGS = 10 V ID = 250 mA I GSS - (nA) 100 0.2 0.1 -0.0 VGS = 5 V 10 -0.1 -0.2 -0.3 -50 1 -25 0 25 50 75 100 125 150 25 50 TJ - Junction Temperature (_C) 2 Normalized Effective Transient Thermal Impedance 1 75 100 125 TJ - Junction Temperature (_C) 150 Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 350_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71609. www.vishay.com Document Number: 71609 S-41777--Rev. D, 04-Oct-04 4 |
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