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| TPC6002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6002 Notebook PC Applications Portable Equipment Applications * * * * Low drain-source ON resistance: RDS (ON) = 25 m (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage DC Drain current (Note 1) Pulse (Note 1) Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range (Note 4) Symbol VDSS VDGR VGSS ID Rating 30 30 20 6 A IDP 24 Unit V V V JEDEC W 2-3T1A PD 2.2 JEITA TOSHIBA PD EAS IAR EAR Tch Tstg 0.7 5.8 3 0.22 150 -55 to 150 W mJ A mJ C C Weight: 0.011 g (typ.) Circuit Configuration 6 5 4 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Symbol Rth (ch-a) Max 56.8 Unit C/W 1 2 3 Marking (Note 5) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.5 C/W Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatically sensitive device. Please handle it with caution. S2B 1 2001-11-07 TPC6002 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD ~ 24 V, VGS = 10 V, ID = 6 A Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr ton ID = 3 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 3 A VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A Min 3/4 3/4 30 15 1.3 3/4 3/4 3.5 3/4 3/4 3/4 3/4 VOUT 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 36 25 10 610 105 151 3 9 9 27 13 10 3 Max 10 10 3/4 3/4 2.5 50 30 3/4 3/4 3/4 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 nC pF Unit mA mA V V mW S VGS 10 V 0V 4.7 W Duty < 1%, tw = 10 ms = VDD ~ 15 V - Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Pulse drain reverse current Forward voltage (Diode) (Note 1) Symbol IDRP VDSF Test Condition 3/4 IDR = 6 A, VGS = 0 V Min 3/4 3/4 Typ. 3/4 3/4 Max 24 -1.2 Unit A V Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) FR-4 25.4 25.4 0.8 Unit: (mm) (a) (b) RL = 5 W FR-4 25.4 25.4 0.8 Unit: (mm) Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 W, IAR = 3.0 A Note 4: Repetitive rating; pulse width limited by maximum channel temperature Note 5: Black round marking "*" locates on the left lower side of parts number marking "S2B" indicates terminal No.1. 2 2001-11-07 TPC6002 ID - VDS 5 10 4 4 3.2 3 8 10 3.4 4 10, 8, 6 ID - VDS 3.2 3.1 (A) (A) 2.8 3 2.7 2 3 6 2.9 ID Drain current Drain current ID 2.6 VGS = 2.5 V Common source Ta = 25C Pulse test 0.1 0.2 0.3 0.4 0.5 4 2.7 2 1 VGS = 2.5 V Common source Ta = 25C Pulse test 1 2 3 4 5 0 0 0 0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 12 Common source VDS = 10 V Pulse test 0.6 VDS - VGS Common source Ta = 25C Pulse test (A) 8 VDS Drain-source voltage (V) 10 0.5 0.4 Drain current ID 6 0.3 4 100C 2 25C 0 0 Ta = -55C 2.5 3 3.5 0.2 3A 0.1 1.5 A ID = 6 A 0.5 1 1.5 2 0 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 Common source VDS = 10 V 50 Pulse test 30 Ta = -55C 25C 100C 100 Common source Ta = 25C Pulse test RDS (ON) - ID iYfsi (S) Drain-source on resistance RDS (ON) (mW) 50 VGS = 4.5 V 30 10 V Forward transfer admittance 10 5 3 1 1 3 10 30 100 10 0.1 0.3 1 3 10 30 100 Drain current ID (A) Drain current ID (A) 3 2001-11-07 TPC6002 RDS (ON) - Ta 60 Common source Pulse test 50 30 ID = 6 A, 3 A, 1.5 A 100 Common source Ta = 25C Pulse test 10 V IDR - VDS Drain-source on resistance RDS (ON) (mW) (A) 5V 3V 30 VGS = 4.5 V ID = 6 A, 3 A, 1.5 A 20 VGS = 10 V 10 Drain reverse current IDR 40 10 3 1 0.3 1V 0.1 0 -0.2 -0.4 -0.6 VGS = 0 V -0.8 -1 -1.2 0 -80 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 1000 Ciss 3 Vth - Ta Common source Gate threshold voltage Vth (V) 2.5 VDS = 10 V ID = 1 mA Pulse test (pF) 300 2 Capacitance C 100 Coss Crss 1.5 1 30 Common source VGS = 0 V f = 1 MHz Ta = 25C 10 0.3 1 0.1 0.5 3 10 30 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Tc 2.5 (1) t = 5 s (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (1) DC 1 (2) t = 5 s 0.5 (2) DC 0 0 40 Dynamic input/output characteristics Common source I =6A 35 D Ta = 25C Pulse test 30 25 VDD = 24 V VGS 16 12 V 6V VDD = 24 V 12 10 8 6 4 6V 5 VDS 0 0 2 0 24 14 PD (W) (V) 2 VDS Drain power dissipation Drain-source voltage 20 15 12 V 10 40 80 120 160 4 8 12 16 20 Ambient temperature Ta (C) Total gate charge Qg (nC) 4 2001-11-07 Gate-source voltage 1.5 VGS (V) TPC6002 rth - tw 1000 (C/W) 300 100 Device mounted on a glassepoxy board (b) (Note 2b) rth Transient thermal impedance 30 10 Device mounted on a glassepoxy board (a) (Note 2a) 3 1 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse tw (S) Safe operating area 100 30 ID max (pulsed)* 1 ms* 10 10 ms* 3 1 0.3 0.1 0.03 0.01 Drain current ID (A) *: Single nonrepetitive pulse Ta = 25C 0.003 Curves must be derated linearly with increase in temperature 0.001 0.01 0.03 0.1 0.3 1 VDSS max 3 10 30 100 Drain-source voltage VDS (V) 5 2001-11-07 TPC6002 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any in * ellectual property or other rights of TOSHIBA CORPORATION or others. 6 2001-11-07 |
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