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INTEGRATED CIRCUITS
DATA SHEET
UAA2073M Image rejecting front-end for GSM applications
Product specification Supersedes data of July 1995 File under Integrated Circuits, IC03 1995 Dec 07
Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
FEATURES * Low-noise, wide dynamic range amplifier * Very low noise figure * Dual balanced mixer for at least 30 dB; on-chip image rejection * IF I/Q combination network for 50 to 100 MHz * Down-conversion mixer for closed-loop transmitters * Independent TX/RX fast on/off power-down modes * Very small outline packaging * Very small application (no image filter). APPLICATIONS * 900 MHz front-end for GSM hand-portable equipment * Compact digital mobile communication equipment * TDMA receivers. GENERAL DESCRIPTION UAA2073M contains both a receiver front-end and a high frequency transmit mixer intended for GSM (Global System for Mobile communications) cellular telephones. Designed in an advanced BiCMOS process it combines high performance with low power consumption and a high degree of integration, thus reducing external component costs and total front-end size. The main advantage of the UAA2073M is its ability to provide over 30 dB of image rejection. Consequently, the image filter between the LNA and the mixer is suppressed and the duplexer design is eased, compared with a conventional front-end design. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME UAA2073M SSOP20 DESCRIPTION
UAA2073M
Image rejection is achieved in the internal architecture by two RF mixers in quadrature and two all-pass filters in I and Q IF channels that phase shift the IF by 45 and 135 respectively. The two phase shifted IFs are recombined and buffered to furnish the IF output signal. For instance, signals presented at the RF input at LO + IF frequency are rejected through this signal processing while signals at LO - IF frequency can form the IF signal. An internal switch allows to reject the upper or lower image frequency. Image rejection is at an optimum when the IF is 71 MHz and local oscillator is above the wanted signal. The receiver section consists of a low-noise amplifier that drives a quadrature mixer pair. The IF amplifier has on-chip 45 and 135 phase shifting and a combining network for image rejection.The IF driver has differential open-collector type outputs. The LO part consists of an internal all-pass type phase shifter to provide quadrature LO signals to the receive mixers. The all-pass filters outputs are buffered before been fed to the receive mixers. The transmit section consists of a down-conversion mixer and a transmit IF driver stage. In the transmit mode an internal LO buffer is used to drive the transmit IF down-conversion mixer. All RF and IF inputs or outputs are balanced to reduce EMC issues. Fast power-up switching is possible. A synthesizer-on (synthon) mode enables LO buffers independent of the other circuits. When SYNTHON pin is HIGH, all internal buffers on the LO path of the circuit are turned on, thus minimizing LO pulling when remainder of receive chain is powered-up.
VERSION SOT266-1
plastic shrink small outline package; 20 leads; body width 4.4 mm
1995 Dec 07
2
Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
QUICK REFERENCE DATA Note 1. SYMBOL VCC ICC(RX) ICC(TX) NF GCP IR Tamb Note 1. For conditions see Chapters "DC characteristics" and "AC characteristics". BLOCK DIAGRAM supply voltage receive supply current transmit supply current noise figure on demonstration board (including matching and PCB losses) conversion power gain image frequency rejection operating ambient temperature PARAMETER MIN. 3.6 21 9 - 20 30 -30 TYP. 3.75 26 12 3.25 23 37 +25
UAA2073M
MAX. 5.3 32 15 4.3 26 - +85 V
UNIT mA mA dB dB dB C
handbook, full pagewidth
n.c. 2
n.c. 3
SBS
UAA2073M
1
VCC1
4 20 IFA
RFINA RFINB
5 6 LNA low-noise amplifier IF COMBINER 19 7
IFB
GND1
RECEIVE SECTION
VCC2 15 RX CURRENT REGULATORS TX IF LO 16 QUADRATURE PHASE SHIFTER
TRANSMIT SECTION
RXON TXON SYNTHON
11 12 10
MIXER 14 13 TXOIFA TXOIFB
GND2
LOCAL OSCILLATOR SECTION
18
17 LOINB
9 TXINB
8
MBG794
LOINA
TXINA
Fig.1 Block diagram.
1995 Dec 07
3
Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
PINNING SYMBOL SBS n.c. n.c. VCC1 RFINA RFINB GND1 TXINA TXINB SYNTHON RXON TXON TXOIFB TXOIFA VCC2 GND2 LOINB LOINA IFB IFA PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 DESCRIPTION sideband selection not connected not connected supply voltage for receive and transmit sections RF input A (balanced) RF input B (balanced) ground 1 for receive and transmit sections transmit mixer input A (balanced) transmit mixer input B (balanced) hardware power-on of LO section (including buffers to RX and TX) hardware power-on for receive section and LO buffers to RX hardware power-on for transmit section and LO buffers to TX transmit mixer IF output B (balanced) transmit mixer IF output A (balanced) supply voltage for LO section ground 2 for LO section LO input B (balanced) LO input A (balanced) IF output B (balanced) IF output A (balanced)
n.c. 2 n.c. 3 VCC1 4 RFINA 5
handbook, halfpage
UAA2073M
SBS 1
20 IFA 19 IFB 18 LOINA 17 LOINB 16 GND2
UAA2073M
RFINB 6 GND1 7 TXINA 8 TXINB 9 SYNTHON 10
MBG793
15 VCC2 14 TXOIFA 13 TXOIFB 12 TXON 11 RXON
Fig.2 Pin configuration.
1995 Dec 07
4
Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
FUNCTIONAL DESCRIPTION Receive section The circuit contains a low-noise amplifier followed by two high dynamic range mixers. These mixers are of the Gilbert-cell type. The whole internal architecture is fully differential. The local oscillator, shifted in phase to 45 and 135, mixes the amplified RF to create I and Q channels. The two I and Q channels are buffered, phase shifted by 45 and 135 respectively, amplified and recombined internally to realize the image rejection. Pin SBS allows sideband selection: * fLO < fRF (SBS = 1) * fLO > fRF (SBS = 0).
UAA2073M
Balanced signal interfaces are used for minimizing crosstalk due to package parasitics. The RF differential input impedance is 150 (parallel real part), choosen to minimize current consumption at best noise performance. The IF output is differential and of the open-collector type, tuned for 71 MHz. Typical application will load the output with a differential 500 load; i.e. a 500 resistor load at each IF output, plus a 1 k to x narrow band matching network (x being the input impedance of the IF filter). The path to VCC for the DC current is achieved via tuning inductors. The output voltage is limited to VCC + 3Vbe or 3 diode forward voltage drops. Fast switching, on/off, of the receive section is controlled by the hardware input RXON.
handbook, full pagewidth
SBS IF amplifier +45o
VCC1
MIXER
IFA RFINA RFINB LNA GND1 IF amplifier +135o
MBG795
MIXER
IF COMBINER IFB
SYNTHON
LOIN
RXON
Fig.3 Block diagram, receive section.
1995 Dec 07
5
Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
Local oscillator section The local oscillator (LO) input directly drives the two internal all-pass networks to provide quadrature LO to the receive mixers. The LO differential input impedance is 50 (parallel real part). A synthesizer-on (synthon) mode is used to power-up the buffering on the LO inputs, minimizing the pulling effect on the external VCO when entering transmit or receive modes. This mode is active when the SYNTHON input is HIGH. Table 1 shows status of circuit in accordance with TXON, RXON and SYNTHON inputs. Transmit mixer
UAA2073M
This mixer is used for down-conversion to the transmit IF. Its inputs are coupled to the transmit RF and down-convert it to a modulated transmit IF frequency which is phase locked with the baseband modulation. The transmit mixer provides a differential input at 200 and a differential output driver buffer for a 1 k load. The IF outputs are low impedance (emitter followers). Fast switching, on/off, of the transmit section is controlled by the hardware input TXON.
handbook, halfpage
to RX
VCC2 RX CURRENT REGULATORS TX IF LO to TX
MBG796
handbook, halfpage
TX MIXER RXON TXON SYNTHON LOIN QUAD
MBG797
TXOIFA TXOIFB
GND2
TXON
TXINB
SYNTHON TXINA
LOINA
LOINB
Fig.4 Block diagram, LO section.
Fig.5 Block diagram, transmit mixer.
1995 Dec 07
6
Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
Table 1 Control of power status EXTERNAL PIN LEVEL CIRCUIT MODE OF OPERATION TXON LOW LOW HIGH LOW LOW HIGH HIGH HIGH RXON LOW HIGH LOW LOW HIGH LOW HIGH HIGH SYNTHON LOW LOW LOW HIGH HIGH HIGH LOW HIGH power-down mode RX mode: receive section and LO buffers to RX on TX mode: transmit section and LO buffers to TX on synthon mode: complete LO section on
UAA2073M
SRX mode: receive section on and synthon mode active STX mode: transmit section on and synthon mode active receive and transmit sections on; specification not guaranteed receive and transmit sections on; specification not guaranteed
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC GND Pl(max) Pdis(max) Tj(max) Tstg supply voltage difference in ground supply voltage applied between GND1 and GND2 maximum power input maximum power dissipation in quiet air maximum operating junction temperature storage temperature PARAMETER - - - - - -65 MIN. 9 0.6 +20 250 +150 +150 MAX. V V dBm mW C C UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-a HANDLING Every pin withstands the ESD test in accordance with MIL-STD-883C class 2 (method 3015.5). PARAMETER thermal resistance from junction to ambient in free air VALUE 120 UNIT K/W
1995 Dec 07
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Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
DC CHARACTERISTICS VCC = 3.75 V; Tamb = 25 C; unless otherwise specified. SYMBOL Pins VCC1 and VCC2 VCC ICC(RX) ICC(TX) ICC(SX) ICC(SRX) ICC(STX) ICC(PD) Vth VIH VIL IIH IIL VI(RFIN) IO(IF) VI(TXIN) VO(TXOIF) VI(LOIN) supply voltage supply current in RX mode supply current in TX mode supply current in synthon mode supply current in SRX mode supply current in STX mode supply current in power-down mode over full temperature range 3.6 21 9 4.4 23 12.5 - - 0.7VCC -0.3 pin at VCC - 0.4 V pin at 0.4 V -1 -1 3.75 26 12 5.6 28 15.0 0.01 PARAMETER CONDITIONS MIN.
UAA2073M
TYP.
MAX.
UNIT
5.3 32 15 6.6 34 19.5 50 - VCC 0.8 +1 +1
V mA mA mA mA mA A
Pins SYNTHON, RXON, TXON and SBS CMOS threshold voltage HIGH level input voltage LOW level input voltage HIGH level static input current LOW level static input current note 1 1.25 - - - - V V V A A
Pins RFINA and RFINB DC input voltage level receive section on 2.0 2.2 2.4 V
Pins IFA and IFB DC output current receive section on 2.3 3.0 3.8 mA
Pins TXINA and TXINB DC input voltage level transmit section on 2.1 2.4 2.6 V
Pins TXOIFA and TXOIFB DC output voltage level transmit section on 1.8 1.9 2.1 V
Pins LOINA and LOINB DC input voltage level receive section on transmit section on Note 1. The referenced inputs should be connected to a valid CMOS input level. 2.3 2.3 2.5 2.5 2.8 2.8 V V
1995 Dec 07
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Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
AC CHARACTERISTICS VCC = 3.75 V; Tamb = -30 to +85 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - 925 note 1 differential RF input to differential IF output matched to 1 k differential note 2 note 2 interferer frequency offset 3 MHz note 1 differential output; note 2 15 20 TYP.
UAA2073M
MAX. - 960 - 26
UNIT MHz dB dB
Receive section (receive section on) ZRF fRF RLRF GCP RF input impedance (real part) RF input frequency return loss on matched RF input conversion power gain balanced parallel 150 - 20 23
Grip G/T DES1 CP1RX IP2DRX
gain ripple as a function of RF frequency gain variation with temperature 1 dB desensitization input power 1 dB input compression point 2nd order intercept point referenced to the RF differential input 3rd order intercept point referenced to the RF input overall noise figure typical application IF output load resistor IF output load capacitance IF frequency range image frequency rejection
- -20 - -24.5 +30
0.2 -15 -30 -23.0 +40
0.5 -10 - - -
dB mdB/K dBm dBm dBm
IP3RX NFRX RL(IF) CL(IF) fIF IR
note 2
-18
-15 3.25 500 - 71 71 37 - 50 20
- 4.30 - 2 100 100 -
dBm dB pF MHz MHz dB
RF input to differential IF output; - notes 2 and 3 between pin and VCC unbalanced fLO > fRF fLO < fRF - - 50 50 30
Local oscillator section (RXON or TXON or SYNTHON = 1) fLO ZLO ZLO LO input frequency LO input impedance impedance change when switching from synthon mode to SRX or STX mode return loss on matched input (including power-down mode) LO input power level reverse isolation LOIN to RFIN at LO frequency; note 2 balanced mUnits measured on Smith chart; note 1 note 2 850 - - 1100 - - MHz
RLLO Pi(LO) RILO
10 -7 40
15 -4 -
- 0 -
dB dBm dB
1995 Dec 07
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Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
SYMBOL PARAMETER CONDITIONS MIN. - - - balanced note 1 from 200 to 1 k output; note 2 note 1 - 880 15 5 40 -22 - -12 double sideband; notes 2 and 3 - TXIN to LOIN; note 2 LOIN to TXIN; note 2 40 40 TYP. - 1 - 200 - 20 7.4 - -17.5 +20 -9 9.8 - -
UAA2073M
MAX.
UNIT k pF MHz dB dB MHz dBm dBm dBm dB dB dB s
Transmit section (transmit section on) ZO(TX) ZL(TX) CL(TX) Zi(TX) fi(TX) RLTX GCP fo(TX) CP1TX IP2TX IP3TX NFTX RITX ITX Timing tstart Notes 1. Measured and guaranteed only on Philips UAA2073M demonstration board at Tamb = +25 C. 2. Measured and guaranteed only on Philips UAA2073M demonstration board. 3. This value includes printed-circuit board and balun losses on Philips UAA2073M demonstration board over full temperature range. start-up time of each block 1 5 20 TX IF output impedance TX IF load impedance TX IF load capacitance TX RF input impedance TX input frequency return loss on matched TX input conversion power gain TX output frequency 1 dB input compression point 2nd order intercept point 3rd order intercept point noise figure reverse isolation isolation 200 - 2 - 915 - 10 200 - - - 12 - -
1995 Dec 07
10
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R3 680 5V SBS R4 680 L11 470 nH L12 470 nH C20 27 pF VCC L2 15 nH C2 C3 1.5 pF L3 15 nH 27 pF C4 27 pF C1 1.5 pF L5 15 nH C8 C5 2.2 pF L4 15 nH 27 pF C7 27 pF C6 2.2 pF 1 C26 27 pF C28 120 pF
handbook, full pagewidth
APPLICATION INFORMATION
Philips Semiconductors
Image rejecting front-end for GSM applications
10 pF C17 1 nF C19 10 pF IFB
18 pF
C33
IFA
270 nH L16 IFO 71 MHz C34 18 pF
R5 680 k
1 2
20 19 18 17 16 VCC C12 27 pF C11 27 pF 27 pF
L15 270 nH C18 L8 6.8 nH
C24 1 nF
C23 27 pF
3 4
C9 2.7 pF L7 6.8 nH
LOIN 854 to 1032 MHz
RFIN 925 to 960 MHz
L1 18 nH
5
UAA2073M
6 7 8 9 15 14 13 12 11
C15 R1 C13
C10 2.7 pF L14 220 nH
11
TXIN 880 to 915 MHz
180 390 pF R2 C14
C31 8.2 pF L13 220 nH
TXOIF 117 MHz
L6 27 nH SYNTHON 2 R9 680 k 2
10
180 390 pF C32 8.2 pF TXON
RXON 2 C25 27 pF R8 680 k C27 27 pF
1
1
R10 680 k
VCC
MBG798
Product specification
UAA2073M
All matching is to 50 for measurement purposes. Different values will be used in a real application.
Fig.6 Philips demonstration board diagram for GSM applications.
Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
Table 2 UAA2073M demonstration board parts list PART Resistors R1 R2 R3 R4 R5 R8 R9 R10 Capacitors C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C17 C18 C19 C20 C23 C24 C25 C26 C27 C28 C31 C32 C33 C34 1.5 pF 27 pF 1.5 pF 27 pF 2.2 pF 2.2 pF 27 pF 27 pF 2.7 pF 2.7 pF 27 pF 27 pF 390 pF 390 pF 27 pF 10 pF 10 pF 1 nF 27 pF 27 pF 1 nF 27 pF 27 pF 27 pF 120 pF 8.2 pF 8.2 pF 18 pF 18 pF 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 0805 RFIN RFIN RFIN RFIN TXIN TXIN TXIN TXIN LOIN LOIN LOIN LOIN TXOIF TXOIF VCCLO IFO IFO IF/VCC SBS VCCLNA VCCLNA RXON SYNTHON TXON VCC TXOIF TXOIF IFO IFO 180 180 680 680 680 k 680 k 680 k 680 k 0805 0805 0805 0805 0805 0805 0805 0805 TXOIF TXOIF IFO IFO SBS RXON SYNTHON TXON VALUE SIZE LOCATION PART Inductors L1 L2 L3 L4 L5 L6 L7 L8 L11 L12 L13 L14 L15 L16 18 nH 15 nH 15 nH 15 nH 15 nH 27 nH 6.8 nH 6.8 nH 470 nH 470 nH 220 nH 220 nH 270 nH 270 nH VALUE
UAA2073M
SIZE
LOCATION
0805 0805 0805 0805 0805 0805 0805 0805 1008 1008 0805 0805 1008 1008
RFIN RFIN RFIN TXIN TXIN TXIN LOIN LOIN IFO IFO TXOIF TXOIF IFO IFO
Other components COMPONENT IC1 SMA/RIM SMB Component manufacturers All surface mounted resistors and capacitors are from Philips Components. The small value capacitors are multilayer ceramic with NPO dielectric. The inductors are from Coilcraft UK. DESCRIPTIONS UAA2073M sockets for RF and IF inputs/outputs VCC socket
1995 Dec 07
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Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
UAA2073M
SOT266-1
D
E
A X
c y HE vM A
Z
20
11
Q A2 pin 1 index A1 (A 3) Lp L A
1
e bp
10
detail X wM
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.5 A1 0.15 0 A2 1.4 1.2 A3 0.25 bp 0.32 0.20 c 0.20 0.13 D (1) 6.6 6.4 E (1) 4.5 4.3 e 0.65 HE 6.6 6.2 L 1.0 Lp 0.75 0.45 Q 0.65 0.45 v 0.2 w 0.13 y 0.1 Z (1) 0.48 0.18 10 0o
o
Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT266-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 90-04-05 95-02-25
1995 Dec 07
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Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.
UAA2073M
If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1995 Dec 07
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Philips Semiconductors
Product specification
Image rejecting front-end for GSM applications
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
UAA2073M
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1995 Dec 07
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Philips Semiconductors - a worldwide company
Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40 783 749, Fax. (31)40 788 399 Brazil: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SAO PAULO-SP, Brazil. P.O. Box 7383 (01064-970), Tel. (011)821-2333, Fax. (011)829-1849 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS: Tel. (800) 234-7381, Fax. (708) 296-8556 Chile: Av. Santa Maria 0760, SANTIAGO, Tel. (02)773 816, Fax. (02)777 6730 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. (852)2319 7888, Fax. (852)2319 7700 Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17, 77621 BOGOTA, Tel. (571)249 7624/(571)217 4609, Fax. (571)217 4549 Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. (032)88 2636, Fax. (031)57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. (358)0-615 800, Fax. (358)0-61580 920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. (01)4099 6161, Fax. (01)4099 6427 Germany: P.O. Box 10 63 23, 20043 HAMBURG, Tel. (040)3296-0, Fax. (040)3296 213. Greece: No. 15, 25th March Street, GR 17778 TAVROS, Tel. (01)4894 339/4894 911, Fax. (01)4814 240 India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, Bombay 400 018 Tel. (022)4938 541, Fax. (022)4938 722 Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4, P.O. Box 4252, JAKARTA 12950, Tel. (021)5201 122, Fax. (021)5205 189 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. (01)7640 000, Fax. (01)7640 200 Italy: PHILIPS SEMICONDUCTORS S.r.l., Piazza IV Novembre 3, 20124 MILANO, Tel. (0039)2 6752 2531, Fax. (0039)2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2 -chome, Minato-ku, TOKYO 108, Tel. (03)3740 5130, Fax. (03)3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. (02)709-1412, Fax. (02)709-1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. (03)750 5214, Fax. (03)757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TX 79905, Tel. 9-5(800)234-7381, Fax. (708)296-8556 Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. (040)783749, Fax. (040)788399 (From 10-10-1995: Tel. (040)2783749, Fax. (040)2788399) New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. (09)849-4160, Fax. (09)849-7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. (022)74 8000, Fax. (022)74 8341 Pakistan: Philips Electrical Industries of Pakistan Ltd., Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton, KARACHI 75600, Tel. (021)587 4641-49, Fax. (021)577035/5874546 Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc, 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. (02)810 0161, Fax. (02)817 3474 Portugal: PHILIPS PORTUGUESA, S.A., Rua dr. Antonio Loureiro Borges 5, Arquiparque - Miraflores, Apartado 300, 2795 LINDA-A-VELHA, Tel. (01)4163160/4163333, Fax. (01)4163174/4163366 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. (65)350 2000, Fax. (65)251 6500 South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430, Johannesburg 2000, Tel. (011)470-5911, Fax. (011)470-5494. Spain: Balmes 22, 08007 BARCELONA, Tel. (03)301 6312, Fax. (03)301 42 43 Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM, Tel. (0)8-632 2000, Fax. (0)8-632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. (01)488 2211, Fax. (01)481 77 30 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978, TAIPEI 100, Tel. (02)388 7666, Fax. (02)382 4382 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, Bangkok 10260, THAILAND, Tel. (662)398-0141, Fax. (662)398-3319 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. (0 212)279 27 70, Fax. (0212)282 67 07 United Kingdom: Philips Semiconductors LTD., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. (0181)730-5000, Fax. (0181)754-8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556 Uruguay: Coronel Mora 433, MONTEVIDEO, Tel. (02)70-4044, Fax. (02)92 0601
Internet: http://www.semiconductors.philips.com/ps/ For all other countries apply to: Philips Semiconductors, International Marketing and Sales, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-724825 (from 10-10-1995: +31-40-2724825) SCD41 (c) Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
413061/1100/03/pp16 Document order number: Date of release: 1995 Dec 07 9397 750 00511

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