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| SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 4 FEBRUARY 1997 FEATURES * 250 Volt VCEO * Gain of 500 at IC=100mA * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits PARTMARKING DETAIL FZT696B FZT696B C E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 180 180 5 1 0.5 2 -55 to +150 UNIT V V V A A W C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25C) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-OnVoltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff 500 150 70 200 6 80 4400 180 180 5 SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V V V 0.1 0.1 0.2 0.2 0.25 0.9 0.9 A A IC=100A IC=10mA* IE=100A VCB=140V VEB=4V IC=50mA, IB=0.5mA* IC=100mA, IB=2mA* IC=200mA, IB=5mA* IC=200mA, IB=5mA* IC=200mA, VCE=5V* IC=100mA, VCE=5V* IC=200mA, VCE=5V* V V V V V MHz pF pF ns ns IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCE=10V, f=1MHz IC=100mA, IB1=10mA IB2=10mA, VCC=50V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 227 FZT696B TYPICAL CHARACTERISTICS IC/IB=100 0.8 IC/IB=50 IC/IB=10 Tamb=25C 0.8 -55C +25C +100C +175C IC/IB=50 - (Volts) 0.6 - (Volts) V 0.6 0.4 0.4 V 0.2 0.2 0 0.01 0.1 1 10 0 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 +100C +25C -55C VCE=5V 1.5K 1.6 1.4 - Normalised Gain -55C +25C +100C +175C IC/IB=50 - Typical Gain - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 1K 500 h 0 0 0.01 0.1 1 10 0 0.01 0.1 1 10 I+ - Collector Current (Amps) h I+ - Collector Current (Amps) hFE v IC 1 VCE=5V VBE(sat) v IC 1.6 1.4 -55C +25C +100C +175C - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 DC 1s 100ms 10ms 1ms 100s V 0.01 0 0.01 0.1 1 10 0.001 1V 10V 100V 1000V I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 228 |
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