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SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 JANUARY 1996 FEATURES * Low saturation voltage * 300V VCEO COMPLEMENTARY TYPE - FZT657 PARTMARKING DETAIL - FZT757 FZT757 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL MIN. V(BR)CBO V(BR)CEO -300 -300 -5 -0.1 -0.1 -0.5 -1.0 -1.0 40 50 30 20 MHz pF SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE -300 -300 -5 -1 -0.5 2 -55 to +150 UNIT V V V A A UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-200V VEB=-3V IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE =-5V* IC=-10mA, VCE =-5V* IC=-100mA, VCE =-5V* IC=-10mA, VCE =-20V f=20MHz VCB=-20V, f=1MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo V V V *Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 240 FZT757 TYPICAL CHARACTERISTICS td tr ts tf s 250 s IB1=IB2=IC/10 VCE=10V 4 1.6 - (mV) IC/IB=10 200 3 1.4 1.2 ts Switching time 1.0 tf 2 0.8 150 V 0.6 td 1 0.4 tf 0.2 tr 0.1 tr 100 ts td 1 0 0.0001 0.001 0.01 0.1 1 0.01 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 100 1.2 - Normalised Gain (%) 80 1.0 IC/IB=10 VCE=5V 60 - (Volts) V 0.8 40 0.6 20 0.4 h 0 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 1 VBE(sat) v IC Single Pulse Test at Tamb=25C 1.2 1.0 VCE=5V 0.8 0.1 DC 100ms 10ms 1ms 300s - (Volts) 0.6 0.01 V 0.4 0.0001 0.001 0.01 0.1 1 0.001 1 10 100 1000 IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 241 |
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