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| Infrared Emitting Diodes(GaAs) K DNH OESI KET-511 DIMENSIONS The KET-511 is a GaAs IRED mounted in a low profile clear epoxy package. This IRED is both compact and easy to mount. (Unit : mm) FEATURES UPlastic mold package APPLICATIONS U hotointerrupters P U ouses M U ncoders E MAXIMUM RATINGS Item Reverse voltage Forward current Power dissipation *1 Pulse forward current Operating temp. Storage temp. *2 Soldering temp. (Ta=2...) 5 Symbol VR F I PD F IP Topr. Tstg. Tsol. Rating 5 50 75 1 0 85 3 5 85 2 260 Unit V mA mW A ... ... ... *1. pulse width tw Z100 *I sec.period 10msec. T= *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Peak emission wavelength Spectral bandwidth Radiant intensity *3 Half angle (Ta=2...) 5 Symbol VF R I *Ip **I PO **E Conditions F= I 20mA VR=5V F= I 20mA F= I 20mA F= I 4mA Min. Typ. 1.2 940 50 ae 0 4 Max. 15 10 Unit. V *I A nm nm mW/sr deg. *3. Measured by tester of KODENSHI CORP. *3. Measured by tester of KODENSHI CORP. - 1- Infrared Emitting Diodes(GaAs) KET-511 Power dissipation Vs. Ambient temperature Relative radiant intensity vs. Ambient temperature Relative intensity Vs. Wavelength Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2- |
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