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| NTE2935 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS(on): 0.638 Typ D Lower Leakage Current: 10A (Max) @ VDS = 500V Absolute Maximum Ratings: Drain-to-Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain Current, ID Continuous TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W/C Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 641mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.5mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . +300C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.46C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 30mH, IAS = 6.2A, VDD = 50V, RG = 27, Starting TJ = +25C. Note 3. ISD 8A, di/dt 160A/s, VDD V(BR)DSS, Starting TJ = +25C. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Gate-Source Leakage Forward Gate-Source Leakage Reverse Drain-to-Source Leakage Current Symbol BVDSS V(BR)DSS/ ID = 250A TJ VGS(th) IGSS IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr (Body Diode) (Body Diode) Note 1 TJ = +25C, IS = 6.2A, VGS = 0V, Note 4 TJ = +25C, IF = 8A, diF/dt = 100A/s, Note 4 VGS = 10V, ID = 8A, VDS = 400V, Note 4, Note 5 VDD = 250V, ID = 8A, RG = 9.1, Note 4, Note 5 VDS = 5V, ID = 250A VGS = 30V VGS = -30V VDS = 500V VDS = 400V, TC = +125C Static Drain-Source ON Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge VGS = 10V, ID = 3.1A, Note 4 VDS = 50V, ID = 3.1A, Note 4 VGS = 0V, VDS = 25V, f = 1MHz Test Conditions VGS = 0V, ID = 250A Min 500 - 2.0 - - - - - - - - - - - - - - - - Typ - 0.66 - - - - - - 5.73 1190 150 166 18 22 83 30 57 7.5 28.4 Max - - 4.0 100 -100 10 100 0.85 - 1550 175 75 45 55 175 70 74 - - Unit V V/C V nA nA A A mhos pF pF pF ns ns ns ns nC nC nC Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge - - - - - - - - 370 3.9 6.2 34 1.4 - - A A V ns C Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width = 250s, Duty Cycle 2%. Note 5. Essentially independent of operating temperature. .221 (5.6) .123 (3.1) .134 (3.4) Dia .630 (16.0) .315 (8.0) .866 (22.0) G .158 (4.0) D S .804 (20.4) .215 (5.45) .040 (1.0) |
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