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| e PTB 20017 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 150 Watts, 860-900 MHz Class AB Characteristics 50% Collector Efficiency at 150 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 240 Output Power (Watts) 200 160 120 80 40 0 0 7 14 21 28 35 200 17 LOT COD E VCC = 25 V ICQ = 200 mA (per side) f = 900 MHz Input Power (Watts) Package 20224 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 60 4.0 25 330 1.89 -40 to +150 0.53 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20017 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 70 5 50 Max -- -- -- 100 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 150 W, ICQ = 200 mA per side, f = 900 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 150 W, ICQ = 200 mA per side, f = 900 MHz) Intermodulation Distortion (VCC = 25 Vdc, Pout = 150 W(PEP), ICQ = 200 mA per side, f1 = 899 MHz, f2 = 900 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 150 W(PEP), ICQ = 200 mA per side f = 900 MHz--all phase angles at frequency of test) Symbol Gpe Min 8.0 Typ 9.0 Max -- Units dB C 50 -- -- % IMD -- -28 -- dBc -- -- 5:1 -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 150 W, ICQ = 200 mA per side) Z Source Z Load Frequency MHz 860 880 900 R 3.4 3.1 2.9 Z Source jX -6.7 -6.1 -5.6 R 3.5 3.4 3.2 Z Load jX -3.1 -2.6 -2.1 2 e Typical Performance Gain & Efficiency vs. Frequency 11 10 PTB 20017 (as measured in a broadband circuit) Gain (dB) 80 70 60 Gain (dB) 9 8 7 6 5 840 Efficiency (%) 50 VCC = 25 V ICQ = 200 mA (per side) Pout = 150 Watts CW 855 870 885 900 40 30 20 915 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1994 EUS/KR 1301-PTB 20017 Uen Rev. D 09-28-98 3 Efficiency (%) |
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