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e PTB 20051 6 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor Description The 20051 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 6 Watts, 1.465-1.513 GHz Class AB Characteristics 35% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 9.0 Output Power (Watts) 7.5 6.0 4.5 3.0 1.5 0.0 0 0.5 1 1.5 2 200 51 LOT COD E VCC = 26 V ICQ = 40 mA f = 1.501 GHz Input Power (Watts) Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 0.7 28 0.16 -40 to +150 6.2 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20051 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 10 mA, RBE = 22 VBE = 0 V, IC = 10 mA IC = 0 A, IE = 5 mA VCE = 10 V, IC = 0.7 A Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 50 4 20 Typ -- -- 5 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, f = 1.501 GHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 40 mA, f = 1.501 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, f = 1.501 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, f = 1.501 GHz--all phase angles at frequency of test) Symbol Gpe P-1dB C Min 8.0 6.5 35 -- Typ -- -- -- -- Max -- -- -- 5:1 Units dB Watts % -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA) Z Source Z Load Frequency GHz 1.465 1.489 1.513 R 10.7 9.4 8.1 Z Source jX 11.2 11.8 12.8 R 11.9 10.2 9.7 Z Load jX 21.0 20.3 18.3 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1994 EUS/KR 1301-PTB 20051 Uen Rev. D 09-28-98 2 |
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