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| Semiconductor ST5870 Photo Transistor Features * * * * * Lensed for high sensitivity 5mm(T-13/4) all plastic mold type High reliability and stable characteristics Visible light cut-off type With base terminal Outline Dimensions unit : mm PIN Connections 1. Base 2.Collector 3.Emitter KPT-0004-000 1 ST5870 Absolute maximum ratings Characteristic Collector-Emitter Voltage Emitter-Collector Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Temperature Storage Temperature *1Soldering Temperature Symbol VCEO VECO VCBO VEBO IC PD Topr Tstg Tsol Ratings 30 6 30 6 20 75 -25 -30 260 85 100 for 5 seconds Unit V V V V mA mW *1. Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Current Dark Current Symbol ICEO ICEL Test Condition VCEO=10V, Ee=0 VCE=5V, Ee IC=0.5 , Ee 1mW/ 1mW/ Min - Typ 0.05 5 0.18 10 10 Max 0.5 - Unit uA mA V us nm * Light Current Current-Emitter Saturation Voltage Switching Time Rise Time Fall Time 3 VCE(sat) tr tf VCC=2V, IC=1mA R1=100 - Spectral Sensitivity Peak Sensitivity Wavelength Half angle P 700 ~ 1000 880 35 - - nm deg 1/2 30% *1. Tolerance = KPT-0004-000 2 Characteristic Diagrams Fig. 1 ICEL - Ee Fig. 2 ICEL - VCE ST5870 Light Current ICEL [mA] Irradiance Ee [ / ] Light Current ICEL [mA] Collector-Emitter Voltage VCE [V] Fig. 3 PD - Ta Fig.4 ICEO - Ta Power Dissipation PD [mW] Ambient Temperature Ta [ ] Collector Dark Current ICEO [ ] Ambient Temperature Ta [ ] Fig. 5 Spectrum Sensitivity Fig. 6 Sensitivity Diagram Relative Intensity [%] Ambient Temperature Ta [ Wavelength [nm] ] Sensitivity Diagram KPT-0004-000 3 ST5870 Characteristic Diagrams Fig. 7 ICEL - Ee Fig. 8 Spectrum Sensitivity Light Current ICEL [mA] Irradiance Ee [ / ] Light Current ICEL [mA] Irradiance Ee [ / ] Fig. 9 Switching Time Test Circuit KPT-0004-000 4 |
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