 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| GaAlAs Infrared Emitting Diodes TO-46 Lensed Package -- 880 nm VTE1163 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications. ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30C: Maximum Continuous Current: Derate above 30C: Peak Forward Current, 10 s, 100 pps: Temp. Coefficient of Power Output (Typ.): -55C to 125C 200 mW 2.11 mW/C 100 mA 1.05 mA/C 3A -.8%/C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise: 1.0 s Fall: 1.0 s Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) 5.0V 10 A 880 nm 35 pF 260C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also GaAlAs curves, pages 108-110) Output Irradiance Part Number Ee mW/cm2 Min. VTE1163 22 Typ. 28 Condition distance mm 36 Diameter mm 6.4 Radiant Intensity Ie mW/sr Min. 285 Total Power PO mW Typ. 110 Test Current IFT mA (Pulsed) 1.0 Forward Drop VF @ IFT Volts Typ. Typ. 2.8 Max. 3.5 10 Half Power Beam Angle 1/2 Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 112 |
Price & Availability of VTE1163
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |