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ST3M01 TRIPLE VOLTAGE REGULATOR s s s s s s ONLY TWO CELL NEED AS INPUT THREE REGULATED OUTPUT 1) HIGH EFFICENCY PFM DC/DC CONVERTER 3.3V AT 200mA (87% EFFICENCY) 2) VERY LOW NOISE AND VERY LOW DROP VREG (3V AT 20mA) 3) VERY LOW NOISE AAND VERY LOW DROP VREG (1.9V AT 20mA) LOGIC CONTROLLED ELECTRONIC SHUTDOWN LOW BATTERY DETECTOR VIRTUAL GND PIN TEMPERATURA RANGE: -40 TO 85C SO-14 SCHEMATIC DIAGRAM Vin 150 F 15 H IN_SW Lx DC/DC DC/DC OUT DC/DC Linear A OUT LA 1 F IN_Linear Linear B OUT LB 1 F Virtual GND 150 F On-Mode Off-Mode SHDN + LBO Ref Ref - Vref 100 nF 1 K GND_SW GND_Signal November 2000 1/11 ST3M01 ABSOLUTE MAXIMUM RATINGS Symbol VIN VSHDN VLX VLBO ILBO Tstg Top Shutdown Input Voltage Switch Voltage Low Battery Output Voltage Low Battery Output Maximum Current Storage Temperature Range Operating Junction Temperature Range Parameter DC Input Voltage (Both IN_Linear and IN_SW) Value -0.3 to 7 -0.3 to VIN+0.3 -0.3 to 7 -0.3 to 7 -0.3 to 7 30 30 -65 to +150 -40 to +85 Unit V V V V V mA mA C C Vvirtual_GND Virtual GND Output Voltage Ivirtual_GND Virtual GND Output Maximum Current THERMAL DATA Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (*) Value 160 Unit C/W ORDER CODES Type ST3M01D ST3M01DTR Package SO-14 SO-14 (Tape & Reel) Comment 50 parts per tube / 20 tube per box 2500 parts per reel 2/11 ST3M01 CONNECTION DIAGRAM (top view) PIN DESCRIPTION Pin N 1 2 3 4 5 6 7 Symbol GND SW GND SW Virtual GND LBO VREF IN Linear OUT LB Name and Function Switching Ground. Must be low impedance; solder directly to GND plane Switching Ground. Must be low impedance; solder directly to GND plane Virtual GND. Open Drain N-Cnannel MOSFET: must be high impedance when the Low Battery condition is detected. Low Battery Output. Open Drain N-Cnannel MOSFET: sinks current when the input voltage drops below 2V typically. Reference Voltage Output. Bypass with 0.1 F to improve the linears VREF thermal noise performance. Linear Input. Must be connected togheter with IN SW to the input supply. Linear B Output port. 1.9V typically. 8 9 10 11 12 13 14 SHDN GND Signal OUT LA OUT DC/DC IN SW LX LX Shutdown Input. Disables the SMPS and LA output, but the LB, the referencevoltage and the low batery comparator remain active. Signal GND. Must be connected togheter with the Switching Ground. Linear A Output port. 3V typically. DC/DC Output Port: 3.3V typically. SMPS Input. Must be connected togheter with IN_Linear to the input supply. 1.5A N-Channel Power MOSFET Drain. 1.5A N-Channel Power MOSFET Drain. 3/11 ST3M01 ELECTRICAL CHARACTERISTICS (Unless otherwise specified, please refer to the typical operating circut of the pag 1 for the external components values and connections. Unless otherwise noted VSHDN=HIGH) Symbol VI VO(DC/DC) Parameter Operating Input Voltage DC/DC Converter Output Voltage (Test Circuit A) 2.24 DC/DC Converter Efficency VIN=2.4V; IO(DC/DC)=100mA; IO(LA)=0mA; IO(LB)=0mA; TJ = 25C Linear A Output Voltage (Test Circuit A) Linear B Output Voltage (Test Circuit A) Linear A Thermal Output Noise Voltage (Note 2) Linear B Thermal Output Noise Voltage (Note 2) Quiescent Current OFF Mode DC/DC & LA OFF LB ON) (Test Circuit E) Quiescent Current OFF Mode (DC/DC & LA OFF LB ON) (Test Circuit F) DC/DC Supply Current (Test Circuit B) Linear A Quiescent Current (Test Circuit C) 2.24 % V VO(LB) 1.86 1.9 1.955 V eN(LA) VIN=2.4V; VO(DC/DC)=3.5V; IO(LA)=20mA; 10 < f < 80KHz; CO(LA)=1F; CREF=0.1F; TJ = 25C VIN=2.4V; VO(DC/DC)=3.5V; IO(LB)=20mA; 10 < f < 80KHz; CO(LB)=1F; CREF=0.1F; TJ = 25C VIN=3.3V; TJ = 25C VIN=1.9V; TJ = 25C VIN=2.24V; No Load; VSHDN=LOW; 60 Vrms eN(LB) 35 Vrms Iq(OFF) 75 A Iq(OFF) No Load; VSHDN=HIGH; 50 A IS(DC/DC) Iq(LA) Iq(LB) VBATT No Load; TJ = 25C 100 220 75 1.96 2 150 2.04 200 A A A V mV 0.4 V V ms VIN=2.24V; VO(DC/DC)=3.5V; IO(LA)=10mA; TJ = 25C Linear B Quiescent Current VIN=2.24V; VO(DC/DC)=3.5V; (Test Circuit C) IO(LB)=10mA; TJ = 25C VSHDN=HIGH with falling edge Low Battery Detection Range VBATT(HYS) Low Battery Detection Hysteresys RON(LBO) LBO RDSON Vih Vil Ton Control Input Logic Low Control Input Logic High Timer On Response Time on DC/DC VIN=1.9V; VIN>2.24V; VIN>2.24V; ID=5mA; TJ = 25C 1.5 10 -40 < TJ < 85C -40 < TJ < 85C 0.6 VIN=2.4V; CO=100F; TJ = 25C IO(DC/DC)=200mA VSHDN=from GND to VSHDN(MAX) VIN>2.24V; ID=5mA; TJ = 25C 9 RON(V_GND) Virtual GND RDSON 10 Note 1: For VIN < 1.9V the VO(LB) is out of regulation because of under dropout condition Note 2: VO(DC/DC) = 3.5V force for an external DC source to avoid switching noise 4/11 ST3M01 DC/DC CONVERTER BLOCK DIAGRAM LINEAR VREG BLOCK DIAGRAM 5/11 ST3M01 TEST CIRCUIT A Vin 150 F 15 H IN_SW Lx DC/DC DC/DC OUT DC/DC Linear A OUT LA V IN_Linear Linear B OUT LB V Virtual GND 1 F 1 F 150 F V On-Mode Off-Mode SHDN + LBO Ref Ref - Vref 0.1 F 1 K GND_SW GND_Signal TEST CIRCUIT B Vin (Isup)DC/DC A 47 F 15 H IN_SW Lx DC/DC DC/DC OUT DC/DC Linear A OUT LA 1 F IN_Linear Linear B OUT LB 1 F Virtual GND 150 F 47 F SHDN=HIGH + LBO Ref Ref - Vref 0.1 F 1 K GND_SW GND_Signal 6/11 ST3M01 TEST CIRCUIT C (Iq)Ia=(Iin)Ia-(Iout)Ia (Vin)DC/DC Floating (Iin)la A 47 F 15 H IN_SW Lx DC/DC DC/DC (Vin)Lin=2.24V IN_Linear Linear B 47 F OUT DC/DC (Vout)DC/DC=3.5V Linear A OUT LA (Iout)la 1 F OUT LB 1 F Virtual GND SHDN=HIGH + LBO Ref Ref - Vref 0.1 F 1 K GND_SW GND_Signal TEST CIRCUIT D (Iq)Ib=(Iin)Ib-(Iout)Ib (Vin)DC/DC Floating 47 F (Vin)Lin=3.3V (Iin)lb 150 F Lx DC/DC DC/DC OUT DC/DC Linear A OUT LA 1 F IN_Linear Linear B 47 F OUT LB (Iout)lb 1 F Virtual GND 15 H IN_SW A SHDN=LOW + LBO Ref Ref - Vref 0.1 F 1 K GND_SW GND_Signal 7/11 ST3M01 TEST CIRCUIT E Vin = 3.3V A Iq = off 150 F 15 H IN_SW Lx DC/DC DC/DC OUT DC/DC Linear A OUT LA 1 F IN_Linear Linear B OUT LB 1 F Virtual GND 150 F SHDN= LOW + LBO Ref Ref - Vref 0.1 F 1 K GND_SW GND_Signal TEST CIRCUIT F Vin = 1.9V A Iq = off 150 F 15 H IN_SW Lx DC/DC DC/DC OUT DC/DC Linear A OUT LA 1 F IN_Linear Linear B OUT LB 1 F Virtual GND 150 F SHDN=HIGH + LBO Ref Ref - Vref 0.1 F 1 K GND_SW GND_Signal 8/11 ST3M01 DEMOBOARD CIRCUIT L 22 H D STPS320U IN C1 150 F 12 IN_SW ON SH OFF 13,14 LX 11 OUT_DC/DC C2 150 F DC SHDN 8 OUT_LA 10 C4 1 F A ST3M01 IN_Linear 6 Virtual_GND 3 4 LBO GND_SW 1,2 GND_Signal 9 OUT_LB 7 Vref 5 C3 100 nF B C5 1 F VG LBO R1 1KOhm VR PC BOARD LAYOUT 9/11 ST3M01 SO-14 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013G 10/11 ST3M01 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom (c) http://www.st.com 11/11 |
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