View STBV32_77488.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

(R)
STBV32
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s s s
s
ST13003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED
APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV32 is designed for use in compact fluorescent lamp application. TO-92
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 o C St orage Temperature Max. Operating Junction Temperature Value 700 400 9 1.5 3 0.75 1.5 1.1 -65 to 150 150 Uni t V V V A A A A W
o o
C C
February 2000
1/7
STBV32
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 112
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CEV I EBO
Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0)
Test Cond ition s V CE = 700V V CE = 700V V EB = 9 V I C = 10 mA L = 25 mH I C = 0.5 A IC = 1 A I C = 1.5 A I C = 0.5 A IC = 1 A I C = 0.5 A IC = 1 A IC = 1 A I B1 = 0.2 A T p = 25 s IC = 1 A V BE = -5 V V c la mp = 300 V IB = 0.1 A I B = 0.25 A IB = 0.5 A IB = 0.1 A I B = 0.25 A V CE = 2 V V CE = 2 V VCC = 125 V I B2 = -0.2 A IB1 = 0.2 A L = 50 mH T j = 125 o C
Min.
Typ .
Max. 1 5 1
Un it mA mA mA V
V CEO(sus ) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat ) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain RESISTIVE LO AD Rise Time Storage Time Fall Time INDUCTIVE LO AD Storage Time
400
0.5 1 3 1.0 1.2 8 5 35 25 1.0 4.0 0.7 0.8
V V V V V
V BE(s at) h F E
tr ts tf ts
s s s s
Pulsed: Pulse duration = 300s, duty cycle = 1.5 %.
2/7
STBV32
Safe Operating Area Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
STBV32
Inductive Fall Time Inductive Storage Time
Reverse Biased SOA
4/7
STBV32
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Resistive Load Switching Test Circuits.
5/7
STBV32
TO-92 MECHANICAL DATA
mm DIM. MIN. TYP. MAX. MIN.
inch
TYP.
MAX.
A
4.58
5.33
0.180
0.210
B
4.45
5.2
0.175
0.204
C
3.2
4.2
0.126
0.165
D
12.7
0.500
E
1.27
0.050
F
0.4
0.51
0.016
0.020
G
0.35
0.14
6/7
STBV32
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
7/7

▲Up To Search▲

Price & Availability of STBV32

	To Download STBV32 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .