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| (R) STGB20NB37LZ N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESHTM IGBT PRELIMINARY DATA TYPE STGB20NB37LZ s s s s s s V CES CLAMPED V CE(s at) < 2.0 V IC 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") 3 1 DESCRIPTION Using the latest high voltage technology based on patented strip layout, STMicroelectronics has designed an advanced family of IGBTs with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS AUTOMOTIVE IGNITION D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM s ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM (*) E AS P tot E SD T s tg Tj Parameter Collector-Emitter Voltage (V GS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at Tc = 25 o C Collector Current (continuous) at Tc = 100 o C Collector Current (pulsed) Single Pulse Energy Tc = 25 o C T otal Dissipation at Tc = 25 o C Derating Factor ESD (Human Body Model) Storage Temperature Max. O perating Junction Temperature Value CLAMPED 20 CLAMPED 40 30 80 700 150 1 4 -65 to 175 175 Un it V V V A A A mJ W W /o C KV o o C C 1/6 (*) Pulse width limited by safe operating area February 2000 STGB20NB37LZ THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 1 62.5 0.2 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbo l BV (CES) Parameter Clamped Voltage I C =2mA I C =2mA I C =2mA I C = 75 mA I G = 2 mA V CE = 15 V V CE = 200 V V GE = 10 V V GE = 0 T C = 150 o C V GE = 0 T C = 150 oC V CE = 0 300 10 660 15 Test Con ditions V GE = 0 V GE = 0 V GE = 0 T C = - 40 C T C = 25 o C o T C = 150 C TC = 25 o C o Min. 380 375 370 20 12 Typ. 405 400 395 28 14 Max. 430 425 420 Unit V V V V BV (ECR) BV GE I CES IGES RGE Emitter Collector Break-down Voltage Gate Emitter Break-down Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Emitter Resistanc e 16 10 100 1000 30 V A A A K ON () Symbo l V GE(th) Parameter Gate Threshold Voltage Collector-Emitt er Saturation Voltage Test Con ditions V CE = V GE IC = 250A V CE = V GE IC = 250A V CE = V GE IC = 250A V GE V GE V GE V GE = = = = 4.5 4.5 4.5 4.5 V V V V IC IC IC IC = = = = 10 10 20 20 A A A A T C = - 40 C o T C = 25 C o T C = 150 C T C = 25 o C T C= 150 o C T C = 25 o C T C= 150 o C o Min. 1.2 1.0 0.6 Typ. 1.4 1.1 1.0 1.35 1.25 Max. 2 1.8 1.7 2.0 2.0 Unit V V V V V V V V CE(SAT ) DYNAMIC Symbo l gf s C i es C o es C res QG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Test Con ditions V CE = 25 V V CE = 25 V f = 1 MHz I C = 20 A V GE = 0 Min. Typ. 35 2300 165 28 51 Max. Unit S pF pF pF nC V CE = 280 V IC = 20 A V GE = 5 V 2/6 STGB20NB37LZ FUNCTIONAL CHARACTERISTICS Symbo l II U.I. S. Parameter Latching Current Functional Test Open Secondary Coil Test Con ditions V CLAMP = 250 V R GOF F = 1 K R GOF F=1 K L =3 mH R GOF F=1 K L =3 mH V GE = 4.5 V TC = 150 o C T C = 25 o C TC = 150 o C Min. 80 21.6 15 26 18 Typ. Max. Unit A A A SWITCHING ON Symbo l t d(on) tr (di/dt) on Eo n Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Con ditions V CC = 250 V V GE = 4.5 V V CC = 250 V R G = 1 K V CC =250V I C =20A R G =1 K V GE =4.5V I C = 20 A R G = 1 K I C = 20 A V GE = 4.5 V T C = 25 o C TC = 150 o C Min. Typ. 2.3 0.6 550 8.8 9.2 Max. Unit s s A/s mJ mJ SWITCHING OFF Symbo l tc t r (v off ) tf td (o ff ) E o ff(**) tc t r (v off ) tf td (o ff ) E o ff(**) Parameter Test Con ditions I C = 20 A V GE = 4.5 V Min. Typ. 4.8 2.6 2.0 11.5 11.8 7.8 3.5 3.9 12.0 17.8 Max. Unit s s s s mJ s s s s mJ Cross-O ver Time V CC = 250 V Off Voltage Rise Time R GE = 1 K Fall T ime Off Voltage Delay Time Turn-off Switching Loss Cross-O ver Time V CC = 250 V Off Voltage Rise Time R GE = 1 K Fall T ime T C = 150 oC Off Voltage Delay Time Turn-off Switching Loss I C = 20 A V GE = 4.5 V (*) Pulse width limited by safe operating area (*) Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % (**)Losses Include Also The Tail (jedec Standardization) 3/6 STGB20NB37LZ Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 4/6 STGB20NB37LZ TO-263 (D2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D E G L L2 L3 4.4 2.49 0.7 1.14 0.45 1.21 8.95 10 4.88 15 1.27 1.4 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 10.4 5.28 15.85 1.4 1.75 MIN. 0.173 0.098 0.027 0.044 0.017 0.047 0.352 0.393 0.192 0.590 0.050 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.409 0.208 0.624 0.055 0.068 DIM. D A C A2 DETAIL "A" A1 B2 B G C2 DETAIL"A" E L2 L L3 P011P6/E 5/6 STGB20NB37LZ Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 6/6 http://www.st.com . |
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