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| (R) STGD7NB120S-1 N-CHANNEL 7A - 1200V IPAK Power MESHTM IGBT PRELIMINARY DATA T YPE STGD7NB120S-1 s V CES 1200 V V CE(sat) < 2.1 V IC 7A s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS s LIGHT DIMMER s INRUSH CURRENT LIMITATION s MOTOR CONTROL 3 2 1 IPAK TO-251 (Suffix "-1") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM (*) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature o o o Value 1200 20 20 10 7 20 55 0.4 -65 to 150 150 Un it V V V A A A W W /o C o o C C (*) Pulse width limited by safe operating area April 2000 1/6 STGD7NB120S-1 THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 2.27 100 1.5 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbo l V BR(CES) V BR(ECR) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Emitter-Collector Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Con ditions I C = 250 A IC = 10 mA V GE = 0 V GE = 0 T j = 25 oC o T j = 125 C V CE = 0 Min. 1200 20 250 1000 100 Typ. Max. Unit V V A A nA V CE = Max Rating V CE = 0.8 Max Rating V GE = 20 V ON () Symbo l V GE(th) V GE V CE(SAT ) Parameter Gate Threshold Voltage Gate Emitter Voltage Collector-Emitt er Saturation Voltage V CE = V GE V CE = 2.5V V GE = 15 V V GE = 15 V V GE = 15 V Test Con ditions IC = 250 A I C = 2A T j =25 /125 oC IC = 3.5 A IC = 7 A IC = 10 A Min. 3 Typ. Max. 5 6.5 1.6 2.1 1.7 Unit V V V V V DYNAMIC Symbo l gf s C i es C o es C res QG I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Latching Current Test Con ditions V CE =25 V V CE = 25 V IC = 7 A f = 1 MHz V GE = 0 Min. 2.5 Typ. 4.5 430 40 7 29 10 Max. Unit S pF pF pF nC A V CE = 960 V V clamp = 960 V T j = 150 o C IC = 7 A V GE = 15 V R G =1k SWITCHING ON Symbo l t d(on) tr (di/dt) on Eo n Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Con ditions V CC = 960 V V GE = 15 V V CC = 960 V R G = 1 K T j = 125 o C IC = 7 A R G = 1 K IC = 7 A V GE = 15 V Min. Typ. 570 270 800 3.2 Max. Unit ns ns A/s mJ 2/6 STGD7NB120S-1 ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbo l tc t r (v off ) tf E o ff(**) tc t r (v off ) tf E o ff(**) Parameter Test Con ditions IC = 7 A V GE = 15 V Min. Typ. 4.9 2.9 3.3 15 7.5 5.5 6.2 22 Max. Unit s s s mJ s s s mJ Cross-O ver Time V CC = 960 V Off Voltage Rise Time R GE = 1000 Fall T ime Turn-off Switching Loss Cross-O ver Time V CC = 960 V Off Voltage Rise Time R GE = 1000 Fall T ime T j = 125 o C Turn-off Switching Loss IC = 7 A V GE = 15 V (*) Pulse width limited by safe operating area () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) 3/6 STGD7NB120S-1 Switching Off Safe Operatin Area Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching Fig. 3: Switching Waveforms 4/6 STGD7NB120S-1 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 5/6 STGD7NB120S-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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