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| Mini PROFET(R) BSP 450 MiniPROFET * High-side switch * Short-circuit protection * Input protection * Overtemperature protection with hysteresis * Overload protection * Overvoltage protection * Switching inductive load * Clamp of negative output voltage with inductive loads * Undervoltage shutdown * Maximum current internally limited * Electrostatic discharge (ESD) protection * Reverse battery protection1) Package: SOT 223 Type Ordering code Q67000-S266 Pins 1 OUT 2 GND 3 IN 4 Vbb 4 3 2 1 BSP 450 Maximum Ratings Parameter Supply voltage range Load current self-limited Maximum input voltage2) Maximum input current Inductive load switch-off energy dissipation single pulse IL = 0.5A , TA = 85C Operating temperature range Storage temperature range Max. power dissipation (DC)3) TA = 25 C Electrostatic discharge capability (ESD)4) Thermal resistance chip - soldering point: chip - ambient3) Symbol Vbb IL VIN IIN EAS Values -0.3...48 IL(SC) -5.0...Vbb 5 0.5 -40 ...+125 -55 ...+150 1.4 1 7 70 Unit V A V mA J C W kV K/W Tj Tstg Ptot VESD RthJS RthJA + V bb 4 Voltage source ESDDiode Overvoltage protection Current limit Gate protection V Logic Voltage sensor Charge pump Level shifter Rectifier Limit for unclamped ind. loads OUT Temperature sensor 1 3 R IN in Load ESD Logic GND MINI-PROFET Load GND 2 Signal GND GND=150 in GND connection, resistor in series with IN connections reverse load current limited by connected load. 2) At V > V , the input current is not allowed to exceed 5 mA. IN bb 3) BSP 450 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for V connection bb 4) HBM according to MIL-STD 883D, Methode 3015.7 1) With resistor R Semiconductor Group 1 06.96 BSP 450 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 24V unless otherwise specified Symbol Values min typ Unit max Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1) IL = 0.5 A, Vin = high Tj = 25C Tj = 125C 5) Nominal load current (pin 4 to 1) ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 C Turn-on time to 90% VOUT Turn-off time to 10% VOUT RL = 47 Slew rate on 10 to 30% VOUT, RL = 47 Slew rate off 70 to 40% VOUT, RL = 47 RON IL(ISO) --1.7 0.16 --- 0.2 0.38 -- A ton toff dV /dton -dV/dtoff ----- 60 90 2 2 100 150 4 4 s V/s V/s Input Allowable input voltage range, (pin 3 to 2) Input turn-on threshold voltage Vbb = 18...30V Tj = -25...+125C Input turn-off threshold voltage Vbb = 18...30V Tj = -25...+125C Input threshold hysteresis Off state input current (pin 3) VIN(off) = 1.82 V Tj = -25...+125C On state input current (pin 3) VIN(on) = 3.0 V to Vbb Tj = -25...+125C Input resistance Tj = -25...+125C VIN VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) RIN -3.0 -1.82 -20 -1.5 ---0.1 --2.8 Vbb 3.0 ---110 3.5 V V V V A A k 5) I L(ISO) characterizes the MOSFET part of the device and may be higher than the shortcircuit current IL(SC) of the whole device Semiconductor Group 2 BSP 450 Parameter and Conditions at Tj = 25 C, Vbb = 24V unless otherwise specified Symbol Values min typ Unit max Operating Parameters Operating voltage Tj =-25...+125C Undervoltage shutdown Tj =-25...+125C Undervoltage restart Tj =-25...+125C: Undervoltage hysteresis Standby current (pin 4), Vin = low Tj =-25...+100C Tj =125C6) Operating current (pin 2), Vin = high Tj =-25...+125C leakage current (pin 1) Vin = low Tj =-25...+125C Protection Functions Current limit (pin 4 to 1) Vbb(on) Vbb(under) Vbb(u rst) Vbb(under) Ibb(off) IGND IL(off) 12 7 ------ ---0.4 10 1 -- 40 10.5 11 -25 50 1.6 2 V V V V A mA A Tj = 25C Tj = -25...+125C Overvoltage protection Ibb=4mA Tj =-25...+125C Output clamp (ind. load switch off) at VOUT = Vbb - VON(CL), Ibb = 4mA Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation7) Tj Start = 85 C, single pulse, IL = 0.5 A, Vbb = 12 V Reverse Battery Reverse battery voltage8) Continious reverse drain current Drain-Source diode voltage IF = 1 A, Vin = low IL(SC) Vbb(AZ) VON(CL) Tjt Tjt EAS 0.7 0.7 48 -135 --- 1.5 --72 150 10 -- 2 2.4 ----0.5 A V V C K J TA = 25C VOUT>Vbb -Vbb -IS -VON --- --- 30 1 1.2 V A V 6) increase of standby current at T = 125C caused by temperature sense current j 7) while demagnetizing load inductance, dissipated energy is E = (V AS ON(CL) * iL(t) dt, 2 VON(CL) approx. EAS= 1/2 * L * I * ( ) L VON(CL)-Vbb 8) Requires 150 resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Semiconductor Group 3 BSP 450 Max allowable power dissipation Ptot = f (TA,TSP) Ptot [W] 16 14 12 Current limit characteristic IL(SC) = f (Von) (Von see testcircuit) IL(SC) [A] 3.5 3 2.5 10 8 TS P 2 1.5 6 4 TA 2 0 0 25 50 75 100 125 125C 25C -25C 1 0.5 0 0 5 10 15 20 25 TA, TSP[C] On state resistance (Vbb-pin to OUT pin) RON = f (Tj);Vbb = 24 V;IL = 0.5 A RON [] 0.4 0.35 0.3 0.25 0.2 Von [V] Typ. input current IIN = f(VIN); Vbb = 24 V IIN [A] 90 80 70 60 -25C 25C 98% 125C 50 40 0.15 30 0.1 0.05 0 -50 -25 0 25 50 75 100 125 20 10 0 0 5 10 15 20 25 Tj [C] VIN [V] Semiconductor Group 4 BSP 450 Typ. overload current IL(lim) = f (t), Vbb=24V, no heatsink, Param.:Tjstart IL(lim) [A] 1.6 1.4 Typ. operating current IGND = f (Tj), Vbb=30V, VIN=high GND [mA] 1 0.8 1.2 1 0.8 0.6 0.4 125C -25C 0.6 0.4 0.2 0.2 0 -20 0 20 40 60 80 100 0 -25 0 25 50 75 100 125 t [ms] Tj [C] Short circuit current IL(SC) = f (Tj);Vbb = 30 V; IL(SC) [] 1.6 1.4 1.2 1 Typ. standby current Ibb(off) = f(Tj); Vbb = 30 V, VIN = low Ibb(off) [A] 7 6 5 4 0.8 3 0.6 0.4 0.2 0 -25 2 1 0 25 50 75 100 125 0 -25 0 25 50 75 100 125 150 Tj [C] Tj [C] Semiconductor Group 5 BSP 450 Typ. input turn on voltage threshold VIN(T+) = f (Tj) VIN(T+) [V] 3 18V 30V 2 Test circuit 2.5 1.5 1 0.5 0 -25 0 25 50 75 100 125 Tj [C] Typ. on-state resistance (Vbb-Pin to OUT-Pin) RON = f (Vbb,IL); IL = 0.5A, Tj = 25 C; RON [m] 160 140 120 100 80 60 40 20 0 0 5 10 15 20 25 30 35 40 45 Vbb [V] Semiconductor Group 6 BSP 450 Package: all dimensions in mm. SOT 223/4: Semiconductor Group 7 |
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