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| GaAs FET CLY 5 ________________________________________________________________________________________________________ Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Q62702-L90 1 G Pin Configuration 2 3 4 S D S Package 1) CLY 5 CLY 5 SOT 223 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature Pulse peak power Total power dissipation (Ts < 80 C) Ts: Temperature at soldering point Symbol VDS VDG VGS ID TCh Tstg PPulse Ptot Values 9 12 -6 1.2 150 -55...+150 9 2 Unit V V V A C C W W Thermal Resistance Channel-soldering point RthChS 35 K/W 1) Dimensions see chapter Package Outlines Siemens Aktiengesellschaft pg. 1/8 17.12.96 HL EH PD21 GaAs FET Electrical characteristics (TA = 25C , unless otherwise specified) Characteristics Drain-source saturation current VDS = 3 V VGS = 0 V CLY 5 typ 800 10 5 -2.8 11.0 max 1200 100 20 -1.8 Unit mA A A V dB ________________________________________________________________________________________________________ Symbol min 600 -3.8 10.5 IDSS ID IG VGS(p) G Drain-source pinch-off current VDS = 3 V VGS = -3.8 V Gate pinch-off current VDS = 3 V VGS = -3.8 V Pinch-off Voltage VDS= 3 V ID=100A Small Signal Gain*) VDS = 3 V ID = 350 mA Pin = 0 dBm f = 1.8 GHz Small Signal Gain*) VDS = 5 V ID = 350 mA Pin = 0 dBm f = 1.8 GHz G 11.5 12.0 - dB Small Signal Gain **) VDS = 3 V ID = 350 mA Pin = 0 dBm f = 1.8 GHz Gp 9.0 9.5 - dB Output Power VDS = 3 V ID = 350 mA Pin = 19 dBm f = 1.8 GHz Po 26.5 27 - dBm Output Power VDS = 5 V ID = 350 mA Pin = 21 dBm f = 1.8 GHz Po 29.5 30 - dBm 1dB-Compression Point VDS = 3 V ID = 350 mA f = 1.8 GHz P1dB P1dB f = 1.8GHz 40 26.5 30 55 - dBm dBm % 1dB-Compression Point VDS = 5 V ID = 350 mA Power Added Efficiency VDS = 5 V ID = 350 mA Pin = 21 dBm f = 1.8 GHz PAE *) Matching conditions for maximum small signal gain (not identical with power matching conditions!) **) Power matching conditions: f=1.8GHz: Source Match: ms : MAG 0.58; ANG -143; Load Match: ml : MAG 0.76; ANG -116 Siemens Aktiengesellschaft pg. 2/8 17.12.96 HL EH PD21 GaAs FET CLY 5 ________________________________________________________________________________________________________ Compression Power vs. Drain-Source Voltage f = 1.8GHz; IDS=0.5IDSS P1dB 40 [dBm] 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7[V] 8 Drain-Source Voltage D 80 [%] 70 60 50 40 30 20 10 0 Gain 16 [dB] 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7[V] 8 Drain-Source Voltage P1dB 2.0 [W] 1.75 1.5 1.25 1.0 0.75 0.5 0.25 0 Output Characteristics PtotDC 0,9 0,7 0,5 0,3 0,1 0 VGS = 0V VGS = -0.5V VGS = -1V VGS = -1.5V VGS = -2V 0 1 2 3 4 5 6 Drain-Source Voltage [V] Siemens Aktiengesellschaft pg. 3/8 17.12.96 HL EH PD21 GaAs FET CLY 5 ________________________________________________________________________________________________________ typ. Common Source S-Parameters VDS = 3 V ID = 350 mA Zo = 50 f GHz 0,1 0.15 0.2 0.25 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.5 1.6 1.8 2 2.2 2.4 2.5 3 3.5 4 4.5 5 5.5 6 S11 MAG 0,98 0.96 0.93 0.9 0.87 0.81 0.77 0.73 0.71 0.7 0.69 0.68 0.69 0.7 0.71 0.72 0.74 0.76 0.78 0.8 0.81 0.85 0.87 0.89 0.9 0.92 0.92 0.92 ANG -26,6 -39.4 -51.5 -63.1 -73.8 -93.3 -110.3 -125.3 -138.5 -150.4 -161.1 -170.8 172.1 157.3 150.5 144.1 132.2 121.4 111.5 102.5 98 79.2 64 51.4 39.8 29 18.4 8.3 S21 MAG 11.52 11.15 10.6 10.06 9.49 8.34 7.33 6.47 5.75 5.14 4.64 4.2 3.51 2.98 2.76 2.56 2.22 1.94 1.7 1.49 1.39 1.01 0.75 0.59 0.48 0.41 0.35 0.31 ANG 160.7 151.4 142.8 134.9 127.4 114.1 102.5 92.4 83.5 75.2 67.6 60.5 47.2 35.1 29.2 23.6 12.6 2.1 -7.9 -17.4 -21.9 -42.1 -58.1 -70.6 -82.2 -93.1 -103.4 -112.4 S12 MAG 0.01024 0.015 0.01942 0.02323 0.02665 0.03245 0.03711 0.04138 0.04528 0.0489 0.05271 0.05646 0.06393 0.07181 0.07569 0.07941 0.08684 0.09377 0.0998 0.10532 0.1076 0.11638 0.12148 0.12571 0.12914 0.13429 0.13892 0.14142 ANG 79 74.3 69.9 66.1 62.3 57 52.8 49.7 47.3 45.2 43.3 41.6 38 34 32 29.7 24.8 19.7 14.6 9.4 6.7 -6 -17.2 -27.3 -37.2 -47 -57 -66.8 S22 MAG 0.3 0.31 0.33 0.36 0.38 0.4 0.43 0.45 0.47 0.49 0.5 0.51 0.54 0.57 0.58 0.59 0.62 0.65 0.68 0.7 0.71 0.76 0.8 0.84 0.86 0.88 0.9 0.91 ANG -171.8 -169.3 -169.2 -169.4 -169.4 -172.7 -175.6 -179.4 177.5 174.2 170.8 168.1 161.8 155.6 152.9 149.4 143.2 137 130.9 124.7 121.1 105.6 91.4 78.2 65.6 53.1 40.3 27 Siemens Aktiengesellschaft pg. 4/8 17.12.96 HL EH PD21 GaAs FET CLY 5 ________________________________________________________________________________________________________ typ. Common Source S-Parameters VDS = 5 V ID = 350 mA Zo = 50 f GHz 0.1 0.15 0.2 0.25 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.5 1.6 1.8 2 2.2 2.4 2.5 3 3.5 4 4.5 5 5.5 6 S11 MAG 0.98 0.95 0.92 0.89 0.86 0.8 0.76 0.72 0.7 0.69 0.68 0.68 0.68 0.7 0.71 0.72 0.75 0.77 0.8 0.82 0.83 0.87 0.89 0.91 0.92 0.93 0.93 0.93 ANG -26.3 -38.8 -50.8 -62.1 -72.6 -91.7 -108.3 -122.9 -135.9 -147.6 -158.1 -167.7 175.3 160.4 153.6 147.1 135 123.9 113.7 104.3 99.7 80.1 64.4 51.5 39.6 28.8 18.1 8 S21 MAG 13.02 12.58 11.98 11.34 10.68 9.39 8.24 7.27 6.45 5.77 5.2 4.7 3.92 3.31 3.06 2.83 2.43 2.1 1.82 1.58 1.47 1.02 0.74 0.56 0.45 0.37 0.31 0.27 ANG 160.1 150.7 141.9 133.7 126.1 112.4 100.6 90.2 80.9 72.4 64.5 57 43 30.1 24 17.9 6.2 -5 -15.6 -25.7 -30.4 -51.4 -67.4 -79.4 -90.2 -100 -109.2 -117.1 S12 MAG 0.00906 0.01326 0.01702 0.02026 0.02304 0.02771 0.03151 0.0348 0.03798 0.04099 0.04435 0.04784 0.05543 0.06413 0.06865 0.07318 0.08237 0.09121 0.09917 0.10617 0.10916 0.12055 0.12631 0.13053 0.13384 0.13894 0.1434 0.14538 ANG 79.1 73.7 69.3 65.6 61.8 57 53.4 51.2 49.7 48.8 47.9 47.1 45.2 42.2 40.6 38.5 33.7 28.3 22.5 16.7 13.6 -0.8 -13.4 -24.5 -35 -45.2 -55.5 -65.6 S22 MAG 0.15 0.17 0.2 0.23 0.26 0.29 0.33 0.35 0.37 0.4 0.41 0.44 0.47 0.51 0.54 0.55 0.6 0.64 0.67 0.7 0.72 0.78 0.83 0.86 0.88 0.91 0.92 0.92 ANG -153.9 -148.4 -148.5 -149.9 -150.6 -155.5 -159.4 -164.1 -167.6 -171.3 -174.9 -177.8 175.4 168.7 165.5 161.7 154.6 147.5 140.4 133.3 129.1 111.6 95.8 81.3 67.9 54.9 41.7 28 Additional S-Parameter available on CD Siemens Aktiengesellschaft pg. 5/8 17.12.96 HL EH PD21 GaAs FET CLY 5 ________________________________________________________________________________________________________ Total Power Dissipation Ptot = f(Ts) Ptot 3.2 [W] 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 50 100 C Ts O 150 Permissible Pulse Load Ptotmax/PtotDC = f(tp) Siemens Aktiengesellschaft pg. 6/8 17.12.96 HL EH PD21 GaAs FET CLY 5 ________________________________________________________________________________________________________ CLY5 Power GaAs-FET Matching Conditions Definition: Measured Data: Typ f [GHz] 0.9 VDS [V] 3 5 6 3 5 6 3 5 6 3 5 6 ID [mA] 350 350 350 350 350 350 350 350 350 350 350 350 P-1dB [dBm] 25.8 29.2 29.8 26.5 30.0 30.6 26.5 30.0 30.5 25.0 29.1 30.5 Gain [dB] 15.6 16.3 17.2 11.0 11.5 12.6 9.5 10.0 10.0 8.4 8.7 8.9 ms MAG 0.50 0.52 0.58 0.63 0.59 0.64 0.58 0.56 0.58 0.62 0.60 0.65 ms ANG 133 144 143 -167 -164 -165 -143 -140 -133 -108 -109 -112 ml MAG 0.70 0.61 0.54 0.74 0.69 0.55 0.76 0.71 0.69 0.68 0.66 0.68 ml ANG -154 -156 -168 -126 -126 -132 -116 -118 -119 -105 -105 -106 CLY5 1.5 1.8 2.4 Note: Gain is small signal gain @ ms and ml Siemens Aktiengesellschaft pg. 7/8 17.12.96 HL EH PD21 GaAs FET CLY 5 ________________________________________________________________________________________________________ Increased Power Handling Capability Pulsed Applications GSM/PCN TDMA-Frame: 4,615ms D= tp T = 0.577 ms = 0125 . 4.615ms 577s Take value Ptot max Ptot DC from diagram permissible pulse load --> Ptot max Ptot DC 1.4 Ptot = 2W x 1.4 = 2.8W DECT TDMA-Frame: 10ms D= tp T = 10ms 4.615ms = 0.0417 417s Take value Ptot max Ptot DC from diagram permissible pulse load --> Ptot max Ptot DC 1.5 Ptot = 2W x 1.5 = 3W Siemens Aktiengesellschaft pg. 8/8 17.12.96 HL EH PD21 |
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