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| HAT2024R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-494 C (Z) 4th. Edition July 1997 Features * * * * Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP-8 8 5 76 34 12 78 DD 56 DD 2 G 4 G S1 S3 1, 3 2, 4 5, 6, 7, 8 S G Dra MOS1 MOS2 HAT2024R Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch*2 Pch * Tch Tstg 3 1 Ratings 30 20 5.5 44 5.5 2 3 150 -55 to +150 Unit V V A A A W W C C Notes: 1. PW 10s, duty cycle 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 2 HAT2024R Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 20 -- -- 1.0 -- -- 3.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.05 0.078 5.5 310 220 100 17 190 25 60 0.9 50 Max -- -- 10 10 2.0 0.065 0.11 -- -- -- -- -- -- -- -- 1.4 -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = 5.5A, VGS = 0*1 IF = 5.5A, VGS = 0 diF/ dt =20A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 16V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10V, I D = 1mA I D = 3A, VGS = 10V*1 I D = 3A, VGS = 4V*1 I D = 3A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz VGS = 4V, ID = 3A VDD 10V Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test t d(on) tr t d(off) tf VDF t rr 3 HAT2024R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 100 30 I D (A) Maximum Safe Operation Area 10 s 10 0 s Pch (W) 10 DC 3 1 Op PW 1m s Drain Current Channel Dissipation era 2.0 1D tio =1 n( 0m 1.0 riv e ra pe eO ri v 2D n tio tio n Op era Operation in 0.3 this area is limited by R DS(on) 0.1 Ta = 25C 0.03 1 shot Pulse 0.01 1 Drive Operation 0.1 PW s < 1 No 0 s te5 ) 0 50 100 150 200 Ambient Temperature Ta (C) 0.3 1 3 10 Drain to Source Voltage V 30 (V) DS 100 Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) 20 Typical Output Characteristics 10V 8 V 5V 6V Pulse Test I D (A) Typical Transfer Characteristics 20 25C Tc = 75C -25C 12 16 I D (A) 4.5 V 4V 16 12 Drain Current 8 Drain Current 3.5 V 3V VGS = 2.5 V 8 4 4 V DS = 10 V Pulse Test 0 2 4 6 Drain to Source Voltage V 8 (V) DS 10 0 2 Gate to Source4 Voltage6 V (V) GS 8 10 4 HAT2024R Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.2 0.1 0.4 ID= 5 A 0.3 0.2 2A 0.1 1A 0 Drain to Source On State Resistance R DS(on) ( W ) Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 0.05 0.02 0.01 0.2 2 4 6 Gate to Source Voltage V 8 (V) GS 10 0.5 1 2 Drain Current 5 10 I D (A) 20 Static Drain to Source on State Resistance R DS(on) ( W ) Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test Forward Transfer Admittance vs. Drain Current 20 Forward Transfer Admittance |y | fs (S) 10 5 2 Tc = -25 C 25 C 0.16 ID= 5 A 0.12 VGS = 4 V 0.08 2A 1A 75 C 1 0.5 0.2 0.1 0.2 V DS = 10 V Pulse Test 1 0.5 2 5 Drain Current I D (A) 10 20 1 A, 2 A, 5 A 0.04 10 V 0 -40 0 40 80 Case Temperature Tc 120 (C) 160 5 HAT2024R Body-Drain Diode Reverse Recovery Time 1000 500 VGS = 0 f = 1 MHz Ciss 200 100 Crss 50 20 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Coss Typical Capacitance vs. Drain to Source Voltage 500 Reverse Recovery Time trr (ns) 100 50 20 10 di/dt = 20 A/s V GS = 0, Ta = 25C 5 0.1 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) Capacitance C (pF) 200 Dynamic Input Characteristics Reverse Drain Current vs. Souece to Drain Voltage V DS (V) 40 16 Reverse Drain Current I DR (A) I D = 5.5 A V GS (V) 50 20 20 16 V GS = 5 V 0, -5 V Drain to Source Voltage 30 V DS V DD = 5 V 10 V 20 V 12 Gate to Source Voltage 12 20 V GS 8 V DD = 20 V 10 V 5V 2 4 6 8 Gate Charge Qg (nc) 4 0 10 8 10 4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 0 6 HAT2024R Switching Characteristics VGS = 4 V, V DD= 10 V PW = 3 s, duty < 1 % tr tf t d(off) 20 t d(on) 10 5 0.1 0.2 500 200 Switching Time t (ns) 100 50 0.5 1 Drain Current 2 5 I D (A) 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 4V 50 W VDD = 10 V Vout Monitor Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout 7 HAT2024R Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 Normalized Transient Thermal Impedance g s (t) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 p ot uls e q ch - f(t) = g s (t) * q ch - f q ch - f = 125 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm) PDM PW T 0.001 1s h D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) 10 Normalized Transient Thermal Impedance g s (t) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 lse 0.01 q ch - f(t) = g s (t) * q ch - f q ch - f = 166 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm) pu PDM PW T 0.001 t ho 1s D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) 8 HAT2024R Package Dimensions Unit: mm 5.0 Max 8 5 4.0 Max 1 4 6.2 Max 1.75 Max 0.25 Max 0 - 8 1.27 0.51 Max 0.25 Max 1.27 Max 0.15 0.25 M Hitachi code EIAJ JEDEC FP-8DA -- MS-012AA 9 HAT2024R Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 10 |
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