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PD - 94004A IRFP260N HEXFET(R) Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS(on) = 0.04 G S ID = 50A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 50 35 200 300 2.0 20 560 50 30 10 -55 to +175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.24 --- Max. 0.50 --- 40 Units C/W www.irf.com 1 10/11/00 IRFP260N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 200 --- --- 2.0 27 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.26 --- --- --- --- --- --- --- --- --- --- 17 60 55 48 5.0 13 4057 603 161 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.04 VGS = 10V, ID = 28A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 28A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 234 ID = 28A 38 nC VDS = 160V 110 VGS = 10V --- VDD = 100V --- ID = 28A ns --- RG = 1.8 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 50 showing the A G integral reverse --- --- 200 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 28A, VGS = 0V --- 268 402 ns TJ = 25C, IF = 28A --- 1.9 2.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ISD 28A, di/dt 486A/s, VDD V(BR)DSS, TJ 175C Starting TJ = 25C, L = 1.5mH RG = 25, IAS = 28A. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRFP260N 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 10 4.5V 4.5V 1 1 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 175C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 3.5 3.0 2.5 2.0 1.5 1.0 0.5 ID = 50A I D , Drain-to-Source Current (A) 100 TJ = 175 C 10 TJ = 25 C 1 4.0 V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFP260N 8000 7000 6000 Coss = Cds + Cgd VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = C gd 16 ID = 28A V DS= 160V V DS= 100V V DS= 40V 12 C, Capacitance(pF) 5000 4000 3000 2000 Ciss 8 Coss 4 Crss 1000 0 1 10 100 1000 0 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 TJ = 175 C ID , Drain Current (A) 100 10us 10 100us TJ = 25 C 1 10 1ms 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 2.2 1 1 TC = 25 C TJ = 175 C Single Pulse 10 100 10ms 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com IRFP260N RD 50 50 VDS VGS D.U.T. + VDD ID , Drain Current (A) ID , Drain Current (A) 40 40 RG - 30 30 10V Pulse Width 1 s Duty Factor 0.1 % 20 20 Fig 10a. Switching Time Test Circuit VDS 90% 10 10 0 0 25 25 50 50 75 100 125 150 125 150 TC 75 , Case100 Temperature ( C) TC , Case Temperature ( C) 175 175 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 1 Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x ZthJC + TC J 0.0001 0.001 0.01 0.1 1 0.1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFP260N EAS , Single Pulse Avalanche Energy (mJ) 1500 15V ID 11A 20A BOTTOM 28A TOP VDS L D R IV E R 1000 RG 20V D .U .T IA S tp + - VD D A 0 .0 1 500 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFP260N Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFP260N Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) 1 5.90 (.6 2 6) 1 5.30 (.6 0 2) -B3.65 (.1 43 ) 3.55 (.1 40 ) 0.25 (.0 1 0) M -A5 .50 (.21 7) 2 0 .30 (.80 0) 1 9 .70 (.77 5) 1 2 3 -C1 4.8 0 (.5 83 ) 1 4.2 0 (.5 59 ) 4 .3 0 (.1 70 ) 3 .7 0 (.1 45 ) LE A D A S S IG N M E N TS 1 2 3 4 G A TE D R A IN SOURCE D R A IN -DDBM 5 .3 0 (.20 9 ) 4 .7 0 (.18 5 ) 2 .5 0 (.08 9) 1 .5 0 (.05 9) 4 2X 5.50 (.2 1 7) 4.50 (.1 7 7) NOTES: 1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3 C O N F O R M S TO JE D E C O U TLIN E T O -247-A C . 2 .40 (.09 4) 2 .00 (.07 9) 2X 5.45 (.2 1 5) 2X 1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0 .2 5 (.0 10 ) M 3 .4 0 (.1 33 ) 3 .0 0 (.1 18 ) C AS 0 .80 (.03 1) 3X 0 .40 (.01 6) 2.60 (.1 0 2) 2.20 (.0 8 7) Part Marking Information TO-247AC E XAM P L E : TH IS IS A N IR F PE 3 0 W ITH A S S E M B L Y L O T C O D E 3 A1 Q A IN TE R N ATIO N AL R EC T IF IE R LOGO ASSEMBLY LOT CODE P A R T N U M B ER IR FP E 30 3A 1 Q 9 3 0 2 D A TE C O D E (YYW W ) YY = YE A R W W W EE K IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 8 www.irf.com |
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