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| Schottky Barrier Diodes (SBD) MA2SD10 Silicon epitaxial planar type 0.30 0.05 For super-high speed switching circuit I Features * * * * Sealed in the super small SS-mini type 2-pin package Allowing to rectify under (IF(AV) = 200 mA) condition Low forward rise voltage VF Allowing high-density mounting 0.80 0.80 0.05 Unit : mm 2 1 0.60 0.60 0.12 - 0.02 + 0.05 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge current* Peak forward current Average forward current Junction temperature Storage temperature Symbol VR VRRM IFSM IFM IF(AV) Tj Tstg Rating 20 20 1 300 200 125 -55 to +125 Unit V V A mA mA C C 1.20 - 0.03 + 0.05 1.60 0.05 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: 2L Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 2 1 I Electrical Characteristics Ta = 25C 3C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Ct Conditions VR = 10 V IF = 5 mA IF = 200 mA VR = 0 V, f = 1 MHz 40 Min Typ Max 20 0.27 0.47 Unit A V V pF Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 0.60 - 0.03 0.01 0.01 + 0.05 0.80 - 0.03 + 0.05 1 MA2SD10 IF V F 1 10-1 Ta = 125C Schottky Barrier Diodes (SBD) IR V R 10-1 10-2 Forward current IF (A) 10-2 75C 25C 10-4 - 20C Reverse current IR (A) Ta = 125C 10-3 75C 10-3 10-4 10-5 10-5 25C 10-6 0 0.1 0.2 0.3 0.4 0.5 0.6 10-6 0 5 10 15 20 25 30 Forward voltage VF (V) Reverse voltage VR (V) 2 |
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