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CMT02N60
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
FEATURES
Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP TO-252 TO-251
SYMBOL
N-Channel MOSFET
Front View
Front View
Front View
D
SOURCE
GATE
SOURCE
SOURCE
DRAIN
DRAIN
DRAIN
GATE
GATE
G
1 2 3
1
2
3
S
1 2 3
ABSOLUTE MAXIMUM RATINGS
Rating Drain to Current Continuous Pulsed Gate-to-Source Voltage Continue Non-repetitive Total Power Dissipation Derate above 25 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy TJ = 25 (VDD = 100V, VGS = 10V, IL = 2A, L = 10mH, RG = 25) Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds JC JA TL 1.0 62.5 260 /W TJ, TSTG EAS Symbol ID IDM VGS VGSM PD Value 2.0 9.0 20 40 50 0.4 -55 to 150 20 V V W W/ mJ Unit A
2004/12/01
Rev. 1.2
Champion Microelectronic Corporation
Page 1
CMT02N60
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number CMT02N60N251 CMT02N60N252 CMT02N60N220 CMT02N60N220FP CMT02N60GN251* CMT02N60GN252* CMT02N60GN220* CMT02N60GN220FP* *Note: G : Suffix for Pb Free Product Package TO-251 TO-252 TO-220 TO-220 Full Package TO-251 TO-252 TO-220 TO-220 Full Package
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
CMT02N60 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.0A) * Drain-Source On-Voltage (VGS = 10 V) (ID = 2.0 A) Forward Transconductance (VDS 50 V, ID = 1.0A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25" from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time ** Negligible, Dominated by circuit inductance (IS = 2.0 A, VGS = 0 V, dIS/dt = 100A/s) VSD ton trr 1.0 ** 340 1.6 V ns ns LS 7.5 nH (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 300 V, ID = 2.0 A, VGS = 10 V, RG = 18) * (VDS = 400 V, ID = 2.0 A, VGS = 10 V)* gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD 1.0 435 56 9.2 12 21 30 24 13 2.0 6.0 4.5 22 mhos pF pF pF ns ns ns ns nC nC nC nH RDS(on) VDS(on) 3.3 4.4 8.8 V VGS(th) 2.0 3.1 4.0 V IGSSR 100 nA IGSSF IDSS 0.25 1.0 100 nA mA Symbol V(BR)DSS Min 600 Typ Max Units V
* Pulse Test: Pulse Width 300s, Duty Cycle 2%
2004/12/01
Rev. 1.2
Champion Microelectronic Corporation
Page 2
CMT02N60
POWER FIELD EFFECT TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
2004/12/01
Rev. 1.2
Champion Microelectronic Corporation
Page 3
CMT02N60
POWER FIELD EFFECT TRANSISTOR
PACKAGE DIMENSION
TO-220
B F
C S
PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE
Q
A
U
T
A B
1
Z H
2
3
C D F G H J K L N Q R S T U
G L V N D
R J
V Z
TO-220FP
I
R1
C
R
J
D
Q
H
.5 0
R1 .5 0
B
8 3.1
0 0.1
A B
A
C D
E
E
P
K O
G H I J K M N O P Q
60 1. R
G
b
R b b1 b2 e
b1 e Front View
b2 R
N M
Side View
Back View
2004/12/01
Rev. 1.2
Champion Microelectronic Corporation
Page 4
CMT02N60
POWER FIELD EFFECT TRANSISTOR
PACKAGE DIMENSION
TO-251
2004/12/01
Rev. 1.2
Champion Microelectronic Corporation
Page 5
CMT02N60
POWER FIELD EFFECT TRANSISTOR
PACKAGE DIMENSION
TO-252
2004/12/01
Rev. 1.2
Champion Microelectronic Corporation
Page 6
CMT02N60
POWER FIELD EFFECT TRANSISTOR
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. customer should provide adequate design and operating safeguards. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer's applications, the
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2004/12/01
Rev. 1.2
Champion Microelectronic Corporation
Page 7

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