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FDS6894AZ
October 2001
FDS6894AZ
Dual N-Channel Logic Level PWM Optimized PowerTrench(R) MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
* 8 A, 20 V. RDS(ON) = 17 m @ VGS = 4.5 V RDS(ON) = 20 m @ VGS = 2.5 V RDS(ON) = 30 m @ VGS = 1.8 V
* Low gate charge (14 nC typical) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability
D2 D
D2 D
DD1 D1 D
5 6
G1 S1 G
Q1
4 3 2
Q2
SO-8
Pin 1 SO-8
7 8
G2 S S2 S S
1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
20 8
(Note 1a)
Units
V V A W
8 32 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1.0 0.9 -55 to +150 C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
C/W C/W
Package Marking and Ordering Information
Device Marking FDS6894AZ Device FDS6894AZ Reel Size 13'' Tape width 12mm Quantity 2500 units
(c)2001 Fairchild Semiconductor Corporation
FDS6894AZ Rev C (W)
FDS6894AZ
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55C VGS = 8 V, VDS = 0 V VGS = - 8 V, VDS = 0 V
Min
20
Typ
Max Units
V mV/C 1 10 10 -10 A A A
Off Characteristics
13
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 8 A VGS = 2.5 V, ID = 7 A VGS = 1.8 V, ID = 6 A VGS = 4.5 V, ID = 8 A,TJ = 125C VGS = 4.5V, VDS = 5 V VDS = 5 V, ID = 8 A
0.6
0.7 -3 12 14 18 17
1.5
V mV/C m
17 20 30 26
ID(on) gFS
On-State Drain Current Forward Transconductance
16 45
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 10 V, f = 1.0 MHz
V GS = 0 V,
1455 297 151
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6
9 14 33 13
18 24 53 23 20
ns ns ns ns nC nC nC
VDS = 10 V, VGS = 4.5 V
ID = 8 A,
14 2 3
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A
(Note 2)
1.3 0.6 1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 78C/W when 2 mounted on a 0.5in pad of 2 oz copper
b) 125C/W when mounted on a 0.02 2 in pad of 2 oz copper
c) 135C/W when mounted on a minimum mounting pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDS6894AZ Rev C (W)
FDS6894AZ
Typical Characteristics
40 VGS = 4.5V 2.5V 1.8V ID, DRAIN CURRENT (A) 30 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.0V
1.8
1.6 VGS = 1.8V 1.4
2.0V 2.5V 3.0V 3.5V
20 1.5V 10
1.2
1
4.5V
0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V)
0.8 0 10 20 ID, DRAIN CURRENT (A) 30 40
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.045 R DS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 8A VGS = 4.5V 1.4
ID = 4A
0.035
1.2
0.025
1
TA = 125 oC TA = 25 C
o
0.015
0.8
0.6 -50 -25 0 25 50 75 100
o
0.005
125
150
1
2
3
4
5
TJ , JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
40
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
25 C
I D, DRAIN CURRENT (A) 30
o
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
TA = -55oC 10 1 0.1
VGS = 0V
125 C
o
TA = 125o C 25 C -55o C
o
20
0.01 0.001
10
0 0.6 0.9 1.2 1.5 1.8 2.1 VGS , GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6894AZ Rev C (W)
FDS6894AZ
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V) I D = 8A 4 CAPACITANCE (pF) 15V 3 VDS = 5V 10V
2000 f = 1MHz VGS = 0 V
CISS 1500
1000
2
COSS 500
1 C RSS 0 0 5 10 Qg, GATE CHARGE (nC) 15 20 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
100s 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE RJA = 135 oC/W TA = 25oC P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
40 SINGLE PULSE RJA =135C/W TA = 25C 30
ID , DRAIN CURRENT (A)
RDS(ON) LIMIT
10
1
20
0.1
10
0.01 0.01
0.1
1
10
100
0 0.001
0.01
0.1
1
10
100
VDS , DRAIN-SOURCE VOLTAGE (V)
t 1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA R JA = 135 C/W P(pk) t1 t2 TJ - TA = P * R JA(t) Duty Cycle, D = t1 / t2
0.1
0.1 0.05 0.02
0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6894AZ Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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