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| PD - 93756D IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching 1.8V Gate Rated HEXFET(R) Power MOSFET G1 VDSS = -12V 3D S 2 RDS(on) = 0.05 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Micro3 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 -4.3 -3.4 -34 1.3 0.8 0.01 33 8.0 -55 to + 150 Units V A W W/C mJ V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. 75 Max. 100 Units C/W www.irf.com 1 04/29/03 IRLML6401 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions -12 --- --- V VGS = 0V, ID = -250A --- -0.007 --- V/C Reference to 25C, ID = -1mA --- --- 0.050 VGS = -4.5V, ID = -4.3A --- 0.085 VGS = -2.5V, ID = -2.5A --- 0.125 VGS = -1.8V, ID = -2.0A -0.40 -0.55 -0.95 V VDS = VGS, ID = -250A 8.6 --- --- S VDS = -10V, ID = -4.3A --- --- -1.0 VDS = -12V, VGS = 0V A --- --- -25 VDS = -9.6V, VGS = 0V, TJ = 55C --- --- -100 VGS = -8.0V nA --- --- 100 VGS = 8.0V --- 10 15 ID = -4.3A --- 1.4 2.1 nC VDS = -10V --- 2.6 3.9 VGS = -5.0V --- 11 --- VDD = -6.0V ns --- 32 --- ID = -1.0A --- 250 --- RD = 6.0 --- 210 --- RG = 89 --- 830 --- VGS = 0V --- 180 --- pF VDS = -10V --- 125 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 22 8.0 -1.3 A -34 -1.2 33 12 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.3A, VGS = 0V TJ = 25C, IF = -1.3A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. Surface mounted on 1" square single layer 1oz. copper FR4 board, steady state. Starting TJ = 25C, L = 3.5mH RG = 25, IAS = -4.3A. 2 www.irf.com IRLML6401 100 VGS -7.0V -5.0V -4.5V -3.0V -2.5V - 1.8V -1.5V BOTTOM -1.0V TOP 100 VGS -7.0V -5.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.0V TOP -I D, Drain-to-Source Current (A) 10 -I D, Drain-to-Source Current (A) 10 1 1 -1.0V -1.0V 0.1 0.1 20s PULSE WIDTH Tj = 25C 0.01 0.1 1 10 100 20s PULSE WIDTH Tj = 150C 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.0 2.0 -I D , Drain-to-Source Current ( ) T J = 25C 10.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -4.3A 1.5 T J = 150C 1.0 1.0 0.5 VDS = -12V 20s PULSE WIDTH 0.1 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -V GS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 1000 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd ID = -4.3A VDS =-10V C, Capacitance(pF) Ciss 800 Coss = C + Cgd ds 8 6 600 4 400 200 Coss Crss 2 0 1 10 100 0 0 4 8 12 16 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 -ID , Drain Current (A) I 100 10us 10 100us 1ms 1 10ms TJ = 150 C TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 0.1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 -VSD,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLML6401 5.0 EAS , Single Pulse Avalanche Energy (mJ) 80 4.0 ID -1.9A -3.4A BOTTOM -4.3A TOP -ID , Drain Current (A) 60 3.0 40 2.0 20 1.0 0.0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC , Case Temperature ( C) Starting TJ , Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 PDM t1 t2 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLML6401 0.10 RDS ( on ) , Drain-to-Source On Resistance ( ) 0.20 VGS = -1.8V 0.15 VGS = -2.5V RDS(on) , Drain-to -Source Voltage ( ) 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0.10 Id = -4.3A 0.05 VGS = -4.5V 0.00 0 10 20 30 40 -I D , Drain Current ( A ) -VGS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current 0.8 -VGS(th) Gate threshold Voltage (V) 0.7 0.6 ID = -250A 0.5 0.4 0.3 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 14. Typical Threshold Voltage Vs. Junction Temperature 6 www.irf.com IRLML6401 Micro3 Package Outline Dimensions are shown in millimeters (inches) D -B3 LEAD ASSIGNMENTS 1 - GATE 2 - SOURCE 3 - DRAIN H 2 0.20 ( .008 ) M AM DIM A A1 B C D e e1 E INCHES MIN .032 .001 .015 .004 .105 MAX .044 .004 .021 .006 .120 MILLIMETERS MIN 0.82 0.02 0.38 0.10 2.67 MAX 1.11 0.10 0.54 0.15 3.05 3 E -A- 3 1 .0750 BASIC .0375 BASIC .047 .083 .005 0 .055 .098 .010 8 1.90 BASIC 0.95 BASIC 1.20 2.10 0.13 0 1.40 2.50 0.25 8 e e1 0.008 (.003) 3X 0.10 (.004) M A1 C AS B S L 3X C 3X H L A -CB MINIMUM RECOMMENDED FOOTPRINT 0.80 ( .031 ) 3X 0.90 ( .035 ) 3X 2.00 ( .079 ) NOTES: 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. 0.95 ( .037 ) 2X www.irf.com 7 IRLML6401 Micro3 Part Marking Information Notes : T his part marking information applies to devices produced before 02/26/2001 EXAMPLE: T HIS IS AN IRLML6302 WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR PART NUMBER 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D DATE CODE PART NUMBER CODE REFERENCE: 1A = 1B = 1C = 1D = 1E = 1F = 1G = 1H = IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 24 25 26 X Y Z WW = (27-52) IF PRECEDED BY A LETT ER YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D DAT E CODE EXAMPLES: YWW = 9503 = 5C YWW = 9532 = EF 50 51 52 X Y Z Notes : T his part marking information applies to devices produced after 02/26/2001 W = (1-26) IF PRECE DED BY LAS T DIGIT OF CALENDAR YEAR Y = YEAR W = WEEK YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D PART NUMBER LOT CODE PART NUMBER CODE REFERENCE: A= B= C= D= E= F= G= H= IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 24 25 26 X Y Z W = (27-52) IF PRECEDED BY A LETTER YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 50 51 52 X Y Z 8 www.irf.com IRLML6401 Micro3 Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.32 ( .051 ) 1.12 ( .045 ) 1.85 ( .072 ) 1.65 ( .065 ) TR 3.55 ( .139 ) 3.45 ( .136 ) 8.3 ( .326 ) 7.9 ( .312 ) FEED DIRECTION 4.1 ( .161 ) 3.9 ( .154 ) 1.1 ( .043 ) 0.9 ( .036 ) 0.35 ( .013 ) 0.25 ( .010 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/03 www.irf.com 9 |
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