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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2N25E/D Product Preview TMOS E-FETTM High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. * Avalanche Energy Capability Specified at Elevated Temperature * Internal Source-to-Drain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode * Source-to-Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage, RGS = 1.0 mW Gate-to-Source Voltage -- Continuous Gate-to-Source Voltage -- Single Pulse (tp 50 mS) Drain Current -- Continuous @ TC = 25C Drain Current -- Continuous @ TC = 100C Drain Current -- Single Pulse (tp 10 mS) Total Power Dissipation @ TC = 25C Derate above 25C Total PD @ TA = 25C mounted on 1 Sq. Drain Pad on FR-4 Bd. Material Total PD @ TA = 25C mounted on 0.7 Sq. Drain Pad on FR-4 Bd. Material Total PD @ TA = 25C mounted on min. Drain Pad on FR-4 Bd. Material Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID ID IDM PD MMFT2N25E TMOS POWER FET 2.0 AMPERES 250 VOLTS RDS(on) = 3.5 W (R) 4 2,4 D 1 2 3 1 G S 3 CASE 318E-04, STYLE 3 TO-261AA Value 250 250 20 40 2.0 0.6 7.0 0.77 6.2 1.0 1.2 0.8 - 55 to 150 Unit Vdc Vdc Vdc Vdc Adc Apk Watts mW/C Watts TJ, Tstg C UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS (TJ < 150C) Single Pulse Drain-to-Source Avalanche Energy -- Starting TJ = 25C (VDD = 80 V, VGS = 10 V, Peak IL= 4.0 Apk, L = 3.0 mH, RG = 25 ) EAS 26 mJ THERMAL CHARACTERISTICS -- Junction-to-Ambient on 1 Sq. Drain Pad on FR-4 Bd. Material -- Junction-to-Ambient on 0.7 Sq. Drain Pad on FR-4 Bd. Material -- Junction-to-Ambient on min. Drain Pad on FR-4 Bd. Material Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds RJA 90 103 162 260 C/W TL C This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. TMOS is a registered trademark of Motorola, Inc. E-FET is a trademark of Motorola, Inc. (c)Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1997 1 MMFT2N25E ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 250 V, VGS = 0) (VDS = 250 V, VGS = 0, TJ = 125C) Gate-Body Leakage Current (VGS = 20 V, VDS = 0) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mA) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (VGS = 10 V, ID = 1.0 Adc) Drain-to-Source On-Voltage (VGS = 10 V, ID = 2.0 A) (VGS = 10 V, ID = 1.0 A, TJ = 125C) Forward Transconductance (VDS = 8.0 V, ID = 2.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge V, (VDS = 200 V ID = 2 0 A, 2.0 A VGS = 10 V) ) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage IS = 2.0 A, VGS = 0 V IS = 2.0 A, VGS = 0 V, TJ = 125C Reverse Recovery Time ( (IS = 2 0 A, 2.0 A, dlS/dt = 100 A/s) Reverse Recovery Stored Charge (1) Pulse Test: Pulse Width 300 S, Duty Cycle 2%. VSD VSD trr ta tb qrr -- -- -- -- -- -- 0.94 0.83 104 63 41 0.365 2.0 -- -- -- -- -- nS Vdc (VDS = 125 V, V ID = 2.0 A, , RG = 9.1 Ohms, VGS = 10 V) td(on) tr td(off) tf QT Q1 Q2 Q3 -- -- -- -- -- -- -- -- 9.2 6.6 13 8.5 4.7 1.3 3.2 2.3 20 10 30 20 10 -- -- -- nC ns (VDS = 25 V, VGS = 0, f = 1.0 MHz) 10 Ciss Coss Crss -- -- -- 137 30 7.0 190 40 10 pF VGS(th) 2.0 -- RDS(on) -- VDS(on) -- -- gFS 0.44 1.2 -- -- -- 8.40 7.35 mhos 2.1 3.5 Vdc 2.8 5.7 4.0 -- Vdc mV/C Ohms BVDSS 250 -- IDSS -- -- IGSS -- -- 100 -- -- 10 100 nAdc -- 324 -- -- Vdc V/C Adc Symbol Min Typ Max Unit mC 2 Motorola TMOS Power MOSFET Transistor Device Data MMFT2N25E 4.0 TJ = 25C 3.5 ID , DRAIN CURRENT (AMPS) 9.0 V 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5.0 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 5.0 V 6.0 V VGS = 10 V ID , DRAIN CURRENT (AMPS) 8.0 V 7.0 V 4.0 3.5 3.0 - 55C 2.5 2.0 1.5 1.0 0.5 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 25C VDS 10 V TJ = 100C Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) 7.0 VGS = 10 V 6.0 TJ = 100C 5.0 25C 4.0 3.0 2.0 1.0 0 0 1.0 2.0 ID, DRAIN CURRENT (AMPS) 3.0 4.0 - 55C R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) 6.0 TJ = 25C 5.0 4.0 VGS = 10 V 3.0 2.0 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ID, DRAIN CURRENT (AMPS) 15 V Figure 3. On-Resistance versus Drain Current and Temperature R DS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 4. On-Resistance versus Drain Current and Gate Voltage 2.5 VGS = 10 V ID = 1.0 A 2.0 IDSS , LEAKAGE (nA) 100 VGS = 0 V TJ = 125C 1.5 100C 10 1.0 0.5 0 -50 1.0 -25 0 25 50 75 100 125 150 0 50 100 150 200 250 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation versus Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage Motorola TMOS Power MOSFET Transistor Device Data 3 MMFT2N25E TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VGS = 0 V Ciss VDS = 0 V 300 C, CAPACITANCE (pF) 250 200 150 100 50 0 -10 Crss -5.0 VGS 0 VDS 5.0 10 15 20 Coss Crss Ciss QT 10 VDS 8.0 Q1 6.0 100 4.0 2.0 Q3 0 0 2.0 4.0 6.0 50 TJ = 25C ID = 2.0 A 8.0 10 0 Q2 150 VGS 200 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 350 12 250 25 QG, TOTAL GATE CHARGE (nC) GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 IS , SOURCE CURRENT (AMPS) TJ = 25C ID = 2.0 A VDD = 125 V VGS = 10 V t, TIME (ns) td(off) 10 tf tr 2.0 Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge TJ = 25C VGS = 0 V 1.5 1.0 td(on) 0.5 1.0 1.0 10 RG, GATE RESISTANCE (OHMS) 100 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 10 EAS , SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) VGS = 20 V SINGLE PULSE TC = 25C 100 ms 1.0 ms 10 ms 0.1 dc 0.01 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1.0 10 100 1000 60 ID = 2.0 A 50 40 30 20 10 0 25 50 75 100 125 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) ID, DRAIN CURRENT (AMPS) 1.0 0.001 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 4 Motorola TMOS Power MOSFET Transistor Device Data MMFT2N25E 1.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 1.0E-5 1.0E-4 1.0E-3 1.0E-2 1.0E-1 t, TIME (seconds) 1.0E+0 1.0E+1 1.0E+2 1.0E+3 0.001 Figure 13. Thermal Response MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface 0.15 3.8 0.079 2.0 between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.091 2.3 0.248 6.3 0.059 1.5 inches mm SOT-223 Motorola TMOS Power MOSFET Transistor Device Data 5 MMFT2N25E PACKAGE DIMENSIONS A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S 1 2 3 B D L G J C 0.08 (0003) H M K INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 GATE DRAIN SOURCE DRAIN CASE 318E-04 ISSUE H Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 6 Motorola TMOS Power MOSFET TransistorMMFT2N25E/D Device Data |
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