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| SFH690ABT/ AT/ BT/ CT Vishay Semiconductors Optocoupler, Phototransistor Output, SOP-4, Mini-Flat Package Features * SOP (Small Outline Package) * Isolation Test Voltage, 3750 VRMS (1.0 s) * High Collector-Emitter Breakdown Voltage, VCEO = 70 V * Low Saturation Voltage * Fast Switching Times * Temperature Stable * Low Coupling Capacitance * End-Stackable, .100 " (2.54 mm) Spacing * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A C 1 2 4 C 3E i179065 e3 Pb Pb-free Agency Approvals * UL1577, File No. E52744 System Code U * CSA 93751 * BSI IEC60950 IEC60065 Applications High density mounting or space sensitive PCBs PLCs Telecommunication The coupling devices are designed for signal transmission between two electrically separated circuits. The SFH690 series is available only on tape and reel. There are 2000 parts per reel. Marking for SFH690AT is SFH690A; SFH690BT is SFH690B; SFH690CT is SFH690C; SFH690ABT will be marked as SFH690A or SFH690B. Order Information Part SFH690ABT SFH690AT SFH690BT SFH690CT Remarks CTR 50 - 300 %, SMD-4 CTR 50 - 150 %, SMD-4 CTR 100 - 300 %, SMD-4 CTR 100 - 200 %, SMD-4 Description The SFH690ABT/ AT/ BT/ CT family has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4-pin 100 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage DC Forward current Surge forward current Power dissipation tp 10 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 50 2.5 80 Unit V mA A mW Document Number 83686 Rev. 1.5, 20-Apr-04 www.vishay.com 1 SFH690ABT/ AT/ BT/ CT Vishay Semiconductors Output Parameter Collector-emitter voltage Emitter-collector voltage Collector current tp 1.0 ms Power dissipation Test condition Symbol VCE VEC IC IC Pdiss Value 70 7.0 50 100 150 Unit V V mA mA mW Coupler Parameter Isolation test voltage between emitter and detector (1.0 s) Creepage Clearance Insulation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDEO 0303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Junction temperature Soldering temperature max. 10 s Dip soldering distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tj Tsld Test condition Symbol VISO Value 3750 5.33 5.08 0.4 175 1012 1011 - 55 to + 150 - 55 to + 100 100 260 C C C C Unit VRMS mm mm mm 200 P -Power Dissipation (mW) tot 150 Phototransistor 100 50 Diode 0 0 18484 25 50 75 100 125 150 Tamb - Ambient Temperature ( C ) Figure 1. Permissible Power Dissipation vs. Ambient Temperature www.vishay.com 2 Document Number 83686 Rev. 1.5, 20-Apr-04 SFH690ABT/ AT/ BT/ CT Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Capacitance Thermal resistance Test condition IF = 5 mA VR = 6.0 V VR = 0.0 V, f = 1.0 MHz Symbol VF IR CO Rthja Min Typ. 1.15 0.01 14 750 Max 1.4 10 Unit V A pF K/W Output Parameter Collector-emitter leakage current Collector-emitter capacitance Thermal resistance Test condition VCE = 20 V VCE = 5.0 V, f = 1.0 MHz Symbol ICEO CCE Rthja 2.8 500 Min Typ. Max 100 Unit nA pF K/W Coupler Parameter Collector-emitter saturation voltage Coupling capacitance Test condition IF = 10 mA, IC = 2.0 mA f = 1.0 MHz Symbol VCEsat CC Min Typ. 0.1 0.3 Max 0.3 Unit V pF Current Transfer Ratio Parameter IC/IF Test condition Part SFH690BT SFH690CT SFH690ABT Symbol CTR CTR CTR CTR Min 50 100 100 50 Typ. Max 150 300 200 300 Unit % % % % IF = 5.0 mA, VCE = 5.0 V SFH690AT Document Number 83686 Rev. 1.5, 20-Apr-04 www.vishay.com 3 SFH690ABT/ AT/ BT/ CT Vishay Semiconductors Switching Characteristics Parameter Rise time Fall time Turn-on time Turn-off time Test condition IC = 2.0 mA, VCC = 5.0 V, RL = 100 IC = 2.0 mA, VCC = 5.0 V, RL = 100 IC = 2.0 mA, VCC = 5.0 V, RL = 100 IC = 2.0 mA, VCC = 5.0 V, RL = 100 Symbol tr tf ton toff Min Typ. 3.0 4.0 5.0 3.0 Max Unit s s s s Typical Characteristics (Tamb = 25 C unless otherwise specified) 80 Collector Current, IC (mA) 70 60 50 40 30 20 10 0 0 2 4 6 IF = 5 mA IF = 30 mA IF = 20 mA IF = 15 mA IF = 10 mA IF RL = 100 VCC = 5 V 50 8 10 isfh690at_01 isfh690at_03 Collector to Emitter Voltage, VCE (V) Figure 2. Switching Operation (without Saturation) Figure 4. Collector Current vs. Collector Emitter Voltage T=-55C Forward Voltage, VF (V) T=-25C 1.4 T=0C Collector-Emitter Dark Current, ICEO (nA) 1.6 1000.0 24 V 100.0 40 V 1.1 T=100C T=75C T=50C T=25C 0.10 1.00 10.00 100.00 12 V 10.0 0.9 1.0 -60 -40 -20 0 20 40 60 80 100 Ambient Temperature, TA (C) 0.6 0.01 isfh690at_02 Forward Current, IF (mA) isfh690at_04 Figure 3. Diode Forward Voltage vs. Forward Current Figure 5. Collector to Emitter Dark Current vs. Ambient Temperature www.vishay.com 4 Document Number 83686 Rev. 1.5, 20-Apr-04 SFH690ABT/ AT/ BT/ CT Vishay Semiconductors 100.000 Current Transfer Ratio, CTR (%) 300 VCE=5.0 V 250 200 150 100 50 0 0.1 isfh690at_08 10.000 Collector Current (mA) Typical for CTR=250% 1.000 0.100 0.010 IF = 25 mA IF = 10 mA IF = 5.0 mA IF = 2.0 mA IF = 1.0 mA Typical for CTR=150% isfh690at_05 0.001 0.0 0.2 0.4 0.6 0.8 1.0 Collector-Emitter Saturation Voltage, VCE (sat) (V) 1.0 10.0 Forward Current, IF (mA) 50 100.0 Figure 6. Collector Current vs. Collector-Emitter Saturation Voltage Figure 9. Current Transfer Ratio vs. Forward Current 1.4 Normalized Output Current, CTR 100.0 1.2 1.0 0.8 0.6 0.4 0.2 Normalized to 1.0 at TA = 25 C IF = 1.0 mA, VCE = 5.0 V -40 -20 0 20 40 60 80 100 isfh690at_09 VCC = 5.0 V IC = 2.0 mA t on t off td Switching Time (s) 10.0 1.0 ts 0.0 -60 isfh690at_06 0.1 0 500 1000 1500 2000 Load Resistance, RL () Ambient Temperature, TA (C) Figure 7. Normalized Output Current vs. Ambient Temperature Figure 10. Switching Time vs. Load Resistance 1.2 Normalized Output Current, CTR 1000 IF = 5.0 mA VCC = 5.0 V 100 CTR = 150% Switching Time, (s) 1.0 0.8 0.6 0.4 0.2 Normalized to 1.0 at T = 25 C A IF = 5.0 mA, VCE = 5.0 V 0.0 -60 -40 -20 0 20 40 60 Ambient Temperature, TA (C) 80 100 tf ts 10 tr td 1 0 100 isfh690at_10 isfh690at_07 1000 10000 Load Resistance, RL () 100000 Figure 8. Normalized Output Current vs. Ambient Temperature Figure 11. Switching Time vs. Load Resistance Document Number 83686 Rev. 1.5, 20-Apr-04 www.vishay.com 5 SFH690ABT/ AT/ BT/ CT Vishay Semiconductors Package Dimensions in Inches (mm) 4 3 0.190 (4.83) 0.170 (4.32) ISO Method A R .010 (.25) .014 (.36) .100 (2.54) .036 (.91) 1 2 .200 (5.08) .290 (7.37) 0.220 (5.59) 0.200 (5.08) 40 10 .045 (1.14) Pin one I.D. (on chamfer side of package) 0.184 (4.67) 0.164 (4.17) 0.024 (0.61) 0.034 (0.86) 0.080 (2.03) 0.075 (1.91) 6 0.018 (0.46) 0.013 (0.33) 0.008 (0.20) 0.004 (0.10) 0.018 (0.46) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41) i178037 LEADS COPLANARITY 0.004 (0.10) Max. 0.025 (0.63) 0.015 (0.38) 0.284 (7.21) 0.264 (6.71) www.vishay.com 6 Document Number 83686 Rev. 1.5, 20-Apr-04 SFH690ABT/ AT/ BT/ CT Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83686 Rev. 1.5, 20-Apr-04 www.vishay.com 7 |
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