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| SI4558DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (W) 0.040 @ VGS = 10 V 0.060 @ VGS = 4.5 V ID (A) "6 "4.8 "6 "4.4 P-Channel -30 0.040 @ VGS = -10 V 0.070 @ VGS = -4.5 V S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D D D D G2 D G1 S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 30 "20 "6 "4.7 "30 2 2.4 P-Channel -30 "20 "6 "4.7 "30 -2 Unit V A W 1.5 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70633 S-56944--Rev. E, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA N- or P- Channel 52 Unit _C/W 2-1 SI4558DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = -30 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS = -24 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 10 V On-State Drain Currentb OS DiC ID(on) VDS = -5 V, VGS = -10 V VDS = 5 V, VGS = 4.5 V VDS = -5 V, VGS = -4.5 V VGS = 10 V, ID = 6 A Drain-Source On-State Resistanceb DiS OS Ri VGS = -10 V, ID = -6 A rDS(on) VGS = 4.5 V, ID = 4.8 A VGS = -4.5 V, ID = -4.4 A Forward Transconductanceb gfs VDS = 15 V, ID = 6 A VDS = -15 V, ID = -6 A IS = 2 A, VGS = 0 V IS = -2 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.045 0.056 13 10.6 0.77 0.77 1.2 -1.2 V 0.060 0.070 S N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -30 8.0 -8.0 0.032 0.032 0.040 0.040 W A N-Ch P-Ch 1.0 -1.0 "100 1 -1 5 -5 mA A nA V Symbol Test Condition Min Typa Max Unit Diode Forward Voltageb VSD Dynamica Total Gate Charge Qg N-Ch N-Channel N Ch l VDS = 15 V VGS = 10 V ID = 6 A V, V, P-Channel P Ch l VDS = -15 V, VGS = -10 V ID = -6 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel N Ch l VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = -15 V RL = 15 W 15 V, ID ^ -1 A, VGEN = -10 V, RG = 6 W 1 10 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IF = 2 A, di/dt = 100 A/ms IF = -2 A, di/dt = 100 A/ms N-Ch P-Ch 16 22 3.4 5.4 2.3 3.6 12 12 12 12 27 38 24 25 45 50 25 25 25 25 55 55 50 50 80 80 ns 30 35 nC C Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70633 S-56944--Rev. E, 23-Nov-98 SI4558DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10, 9, 8, 7, 6, 5 V 30 N-CHANNEL Transfer Characteristics 24 I D - Drain Current (A) 24 I D - Drain Current (A) 18 4V 12 18 12 TC = 125_C 6 25_C -55_C 0 6 3V 0 0 1 2 3 4 5 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.150 1500 Capacitance 0.125 r DS(on)- On-Resistance ( W ) C - Capacitance (pF) 1200 Ciss 900 0.100 0.075 VGS = 4.5 V 0.050 VGS = 10 V 600 Coss 300 Crss 0.025 0 0 6 12 18 24 30 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 VDS = 15 V ID = 6 A 2.0 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 6 r DS(on)- On-Resistance ( W ) (Normalized) 8 1.6 VGS = 10 V ID = 6 A 1.2 4 0.8 2 0.4 0 0 4 8 12 16 0 -50 0 50 100 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70633 S-56944--Rev. E, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-3 SI4558DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 TJ = 150_C 10 r DS(on)- On-Resistance ( W ) I S - Source Current (A) 0.10 N-CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.08 0.06 0.04 ID = 6 A 0.02 TJ = 25_C 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 32 40 Single Pulse Power 0.2 V GS(th) Variance (V) -0.0 Power (W) 24 -0.2 16 -0.4 8 -0.6 -0.8 -50 0 0 50 TJ - Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 2. Per Unit Base = RthJA = 52_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70633 S-56944--Rev. E, 23-Nov-98 SI4558DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10, 9, 8, 7, 6, 5 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 TC = -55_C 25_C P-CHANNEL Transfer Characteristics 18 4V 12 18 125_C 12 6 3V 0 0 2 4 6 8 10 6 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 2000 Capacitance r DS(on)- On-Resistance ( W ) 0.15 C - Capacitance (pF) 1500 Ciss 0.10 VGS = 4.5 V 0.05 VGS = 10 V 1000 Coss 500 Crss 0 0 6 12 18 24 30 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 VDS = 15 V ID = 6 A 2.0 1.8 r DS(on)- On-Resistance ( W ) (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 0 0 5 10 15 20 25 0.4 -50 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 8 VGS = 10 V ID = 6 A 6 4 2 0 50 100 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70633 S-56944--Rev. E, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-5 SI4558DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 0.10 P-CHANNEL On-Resistance vs. Gate-to-Source Voltage 10 TJ = 150_C r DS(on)- On-Resistance ( W ) 0.08 I S - Source Current (A) 0.06 0.04 ID = 6 A 0.02 TJ = 25_C 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.8 0.6 0.4 0.2 -0.0 -0.2 8 -0.4 -0.6 -50 0 0 50 TJ - Temperature (_C) 100 150 0.01 ID = 250 mA 32 40 Single Pulse Power V GS(th) Variance (V) Power (W) 24 16 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 2. Per Unit Base = RthJA = 52_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 70633 S-56944--Rev. E, 23-Nov-98 |
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