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DG417/418/419
Precision CMOS Analog Switches
Features
D D D D D D D "15-V Analog Signal Range On-Resistance--rDS(on): 20 W Fast Switching Action--tON: 100 ns Ultra Low Power Requirements--PD:35 nW TTL and CMOS Compatible MiniDIP and SOIC Packaging 44-V Supply Max Rating
Benefits
D Wide Dynamic Range D Low Signal Errors and Distortion D Break-Before-Make Switching Action D Simple Interfacing D Reduced Board Space D Improved Reliability
Applications
D D D D D D Precision Test Equipment Precision Instrumentation Battery Powered Systems Sample-and-Hold Circuits Military Radios Guidance and Control Systems D Hard Disk Drives
Description
The DG417/418/419 monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical size, the DG417 series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space. To achieve high-voltage ratings and superior switching performance, the DG417 series is built on Siliconix's high voltage silicon gate (HVSG) process. Break-before-make is guaranteed for the DG419, which is an SPDT configuration. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. The DG417 and DG418 respond to opposite control logic levels as shown in the Truth Table.
Functional Block Diagram and Pin Configuration
DG417
Dual-In-Line and SOIC S NC GND V+ 1 2 3 4 Top View 8 7 6 5 D V- IN VL
Truth Table Logic
0 1
DG417
ON OFF
DG418
OFF ON
Logic "0" = v 0.8 V, Logic "1" = w 2.4 V
DG419
Dual-In-Line and SOIC D S1 GND V+ 1 2 3 4 Top View Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70051. 8 7 6 5 S2 V- IN VL
Truth Table--DG419 Logic
0 1
SW1
ON OFF
SW2
OFF ON
Logic "0" = v 0.8 V, Logic "1" = w 2.4 V
Siliconix S-52880--Rev. D, 28-Apr-97
1
DG417/418/419
Ordering Information
Temp Range DG417/418
8-Pin Plastic MiniDIP -40 to 85_C 8-Pin Narrow SOIC -55 to 125_C 8-Pin CerDIP DG417DJ DG418DJ DG417DY DG418DY DG417AK, DG417AK/883 DG418AK, DG418AK/883
Package
Part Number
DG419
-40 to 85_C -55 to 125_C 8-Pin Plastic MiniDIP 8-Pin Narrow SOIC 8-Pin CerDIP DG419DJ DG419DY DG419AK, DG419AK/883
Absolute Maximum Ratings
Voltages Referenced to V- V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3 V) to (V+) + 0.3 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) + 2 V or 30 mA, whichever occurs first Current, (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . 30 mA Current (S or D) Pulsed 1 ms, 10% duty cycle . . . . . . . . . . . . . 100 mA Storage Temperature (AK Suffix) . . . . . . . . . . . . . . -65 to 150_C (DJ, DY Suffix) . . . . . . . . . . . -65 to 125_C Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 6.5 mW/_C above 25_C e. Derate 12 mW/_C above 75_C Power Dissipation (Package)b 8-Pin Plastic MiniDIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW 8-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW 8-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
Schematic Diagram (Typical Channel)
V+ S VL Level Shift/ Drive V+ GND D V-
V-
VIN
Figure 1.
2
Siliconix S-52880--Rev. D, 28-Apr-97
DG417/418/419
Specificationsa
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch Off Leakage Current ID(off) V+ = 16.5 V, V- = -16.5 V 16 5 V V 16 5 VD = #15.5 V VS = "15.5 V DG417 DG418 DG419 DG417 DG418 DG419 IS = -10 mA, VD = "12.5 V V+ = 13.5 V, V- = -13.5 V Full Room Full Room Full Room Full Room Full Room Full Room Full 20 -0.1 -0.1 -0.1 -0.4 -0.4 -0.25 -20 -0.25 -20 -0.75 -60 -0.4 -40 -0.75 -60 -15 15 35 45 0.25 20 0.25 20 0.75 60 0.4 40 0.75 60 -0.25 -5 -0.25 -5 -0.75 -12 -0.4 -10 -0.75 -12 -15 15 35 45 0.25 5 0.25 5 0.75 12 0.4 10 0.75 12 nA V W
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V+ = 15 V, V- = -15 V VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd Mind Maxd Unit
Channel On Leakage C Lk Current
ID(on)
V+ = 16.5 V, V- = -16.5 V , VS = VD = "15.5 V 15 5
Digital Control
Input Current VIN Low Input Current VIN High IIL IIH Full Full 0.005 0.005 -0.5 -0.5 0.5 0.5 -0.5 -0.5 0.5 mA 0.5
Dynamic Characteristics
Turn-On Time Turn-Off Time tON tOFF tTRANS tD Q CS(off) f = 1 MHz VS = 0 V MHz, Drain Off Capacitance Channel On Capacitance CD(off) CD(on) DG417 DG418 DG417 DG418 DG419 RL = 300 W , CL = 35 pF VS = "10 V See Switching Time Test Circuit RL = 300 W , CL = 35 pF VS1 = "10 V VS2 = #10 V RL = 300 W , CL = 35 pF VS1 = VS2 = "10 V DG417 DG418 DG417 DG418 DG419 Room Full Room Full Room Full Room Room Room Room Room Room 13 60 8 8 30 35 5 100 60 175 250 145 210 175 250 5 pC 175 250 145 210 175 250 ns
Transition Time Break-Before-Make Time Delay Charge Injection Source Off Capacitance
DG419
CL = 10 nF, Vgen = 0 V, Rgen = 0 W
p pF
f = 1 MHz, VS = 0 V ,
Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current I+ I- IL IGND V+ = 16.5 V, V- = -16.5 V VIN = 0 or 5 V Room Full Room Full Room Full Room Full 0.001 -0.001 0.001 -0.000 1 -1 -5 1 5 -1 -5 -1 -5 1 5 -1 -5 1 5 A mA 1 5
Ground Current
Siliconix S-52880--Rev. D, 28-Apr-97
3
DG417/418/419
Specificationsa for Unipolar Supplies
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS = -10 mA, VD = 3.8 V V+ = 10.8 V Full Room 40 0 12 0 12 V W
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V+ = 12 V, V- = 0 V VV VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd Mind Maxd Unit
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injection tON tOFF tD Q RL = 300 W , CL = 35 pF, VS = 8 V p, S S i hi Ti T Ci i See Switching Time Test Circuit RL = 300 W , CL = 35 pF DG419 Room Room Room Room 110 40 60 5 pC ns
CL = 10 nF, Vgen = 0 V, Rgen = 0 W
Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ I- IL IGND V+ = 13.2 V, VL = 5.25 V VIN = 0 or 5 V Room Room Room Room 0.001 -0.001 0.001 -0.001 mA
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
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Siliconix S-52880--Rev. D, 28-Apr-97
DG417/418/419
Typical Characteristics
50
rDS(on) vs. VD and Supply Voltage
ID = -10 mA "5 V
40
rDS(on) vs. Temperature
40 "8 V rDS(on)( W ) 30 "10 V "12 V "15 V "20 V 10 rDS(on) ( W )
30
TA = 125_C
20
25_C -55_C
20
10
0 -20 -15 -10 -5 0 5 10 15 20 VD - Drain Voltage (V) 30 20 10 I (pA) 0 -10 -20 -30 -15 -10 -5 0 5 10 15 VD or VS - Drain or Source Voltage (V) DG417/418: ID(on) DG419: ID(off), ID(on)
0 -15 -10 -5 0 5 10 15 VD - Drain Voltage (V) 200
Leakage Currents vs. Analog Voltage
V+ = 15 V V- = -15 V VL = 5 V DG417/418: ID(off), IS(off) DG419: IS(off) Q (pC)
Drain Charge Injection
V+ = 16.5 V V- = -16.5 V VL = 5 V VIN = 0 V CL = 10 nF 1 nF
150
100
500 pF
50
100 pF
0
-50 -15 -10 -5 0 5 10 15 VS - Source Voltage (V)
3.5 3.0 2.5 VIN (V)
Input Switching Threshold vs. Supply Voltages
50 42 40
Operating Voltage Range
1.5 1.0 0.5 VL = 5 V
V+ (V)
2.0
VL = 7 V
30
20
10 2 0 10 -10 15 -15 20 -10 25 -5 30 0 35 0 40 0
0 (V+) 5 (V-) -5
Siliconix S-52880--Rev. D, 28-Apr-97
EEEEEEEE EEEEEEEE EEEEEEEE EEEEEEEE EEEEEEEE EEEEEEEE EEEEEEEE EEEEEEEE EEEEEEEE
5 V CMOS Compatible F F TTL Compatible VIN = 0.8 V, 2.4 V 0
CMOS Compatible -40
-10 -20 -30 Negative Supply V- (V) F = Voltages Used for Production Testing
5
DG417/418/419
Typical Characteristics (Cont'd)
Switching Time vs. Temperature
120 100 80 60 40 20 0 -55 -40 -20 (dB) tOFF 80 60 40 20 0 0 20 40 60 80 100 120 100 1k 10 k 100 k 1M 10 M 100 M Temperature (_C) f - Frequency (Hz) V+ = 15 V V- = -15 V VL = 5 V DG419 Source 1 V+ = 15 V, V- = -15 V VL = 5 V, VIN = 3 V Pulse tON 140 120 100 t ON , t OFF (ns)
Crosstalk and Off Isolation vs. Frequency
DG417/418/419 Source 2
Switching Time vs. Supply Voltages
80
130 120 110
Switching Time vs. V+
70 t ON , t OFF (ns) t ON , t OFF (ns) V- = 0 V VL = 5 V VIN = 3 V tON
100 90 80 70 60 tON V- = 0 V VL = 5 V VIN = 3 V
60
50 tOFF 40 10 11 12 13 14 15 16 Supply Voltage (V) 50 40 30 10 11 12 13 14 15 16 V+ Supply Voltage (V) tOFF
Power Supply Currents vs. Switching Frequency
10 mA V+ = 15 V, V- = -15 V VL = 5 V, VIN = 5 V, 50% D Cycle 1 mA
1 mA 100 nA 10 nA
Supply Current vs. Temperature
V+ = 16.5 V, V- = -16.5 V VL = 5 V, VIN = 0 V I+, I-
I SUPPLY
I+, I- 10 mA IL 1 mA
I SUPPLY
100 mA
1 nA 100 pA 10 pA 1 pA IGND
100 nA 100 1k 10 k 100 k 1M 10 M f - Frequency (Hz)
0.1 pA -55 -40 -20
0
20
40
60
80
100 120
Temperature (_C)
6
Siliconix S-52880--Rev. D, 28-Apr-97
DG417/418/419
Test Circuits
VO is the steady state output with the switch on. +5 V +15 V Logic Input VL "10 V S IN GND V- V+ D 3V 50% 0V VO RL 300 W CL 35 pF Switch Input VS VO 90% tOFF tr <20 ns tf <20 ns
-15 V CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on)
Switch Output
0V tON
Note: Logic input waveform is inverted for switches that have the opposite logic sense.
Figure 2. Switching Time (DG417/418)
+5 V +15 V Logic Input VL VS1 VS2 S1 S2 IN GND V- RL 300 W CL 35 pF V+ D VO VS1 = VS2 VO Switch Output CL (includes fixture and stray capacitance) -15 V 0V tD tD 3V 0V tr <20 ns tf <20 ns
90%
Figure 3. Break-Before-Make (DG419)
+5 V VL VS1 VS2 S1 S2 IN GND V- V+
+15 V Logic Input 3V 50% 0V tTRANS VS1 V01 Switch Output VS2 V02 10% tTRANS 90% tr <20 ns tf <20 ns
D
VO RL 300 W CL 35 pF
-15 V CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on)
Figure 4. Transition Time (DG419)
Siliconix S-52880--Rev. D, 28-Apr-97
7
DG417/418/419
Test Circuits (Cont'd)
+5 V +15 V VO VO CL 10 nF V- INX OFF ON OFF DVO VL S IN 3V GND V+ D
Rg
Vg
Q = DVO x CL
-15 V
Figure 5. Charge Injection
C
+5 V
+15 V
C +5 V +15 V C VL VS Rg = 50 W 0V, 2.4 V IN GND V- C RL S
V+
VL VS Rg = 50 W S1
V+ D 50 W
C
D
VO
VO RL 0.8 V
S2
IN GND V- C
-15 V XTALK Isolation = 20 log C = RF bypass VS VO
-15 V Off Isolation = 20 log VS VO
Figure 6. Crosstalk (DG419)
Figure 7. Off Isolation
+5 V C VL VS Rg = 50 W 0V, 2.4 V IN GND S
+15 V C V+ D RL VO
V-
C
-15 V
Figure 8. Insertion Loss
8
Siliconix S-52880--Rev. D, 28-Apr-97
DG417/418/419
Test Circuits (Cont'd)
+5 V C VL
V+
+15 V +15 V C C V+ S2 Meter HP4192A Impedance Analyzer or Equivalent C f = 1 MHz S1 Meter HP4192A Impedance Analyzer or Equivalent C f = 1 MHz NC
S
DG417/418
V, 2.4 V IN D GND V-
DG419
0 V, 2.4 V IN D2 GND V- D1
-15 V
-15 V
Figure 9. Source/Drain Capacitances
Applications
Switched Signal Powers Analog Switch
The analog switch in Figure 10 derives power from its input signal, provided the input signal amplitude exceeds 4 V and its frequency exceeds 1 kHz. This circuit is useful when signals have to be routed to either of two remote loads. Only three conductors are required: one for the signal to be switched, one for the control signal and a common return. A positive input pulse turns on the clamping diode D1 and charges C1. The charge stored on C1 is used to power the chip; operation is satisfactory because the switch requires less than 1 mA of stand-by supply current. Loading of the signal source is imperceptible. The DG419's on-resistance is a low 100 W for a 5-V input signal.
D1 V+ Input D VL S1 S2 IN Control
C1 0.01 mF
VOUT
RL2 10 kW
DG419
GND V-
RL1 10 kW
Figure 10. Switched Signal Powers Remote SPDT Analog Switch
Siliconix S-52880--Rev. D, 28-Apr-97
9
DG417/418/419
Applications (Cont'd)
Micropower UPS Transfer Switch
When VCC drops to 3.3 V, the DG417 changes states, closing SW1 and connecting the backup cell, as shown in Figure 11. D1 prevents current from leaking back towards the rest of the circuit. Current consumption by the CMOS analog switch is around 100 pA; this ensures that most of the power available is applied to the memory, where it is really needed. In the stand-by mode, hundreds of mA are sufficient to retain memory data. change of state in the analog switch, restoring normal operation.
Programmable Gain Amplifier
The DG419, as shown in Figure 12, allows accurate gain selection in a small package. Switching into virtual ground reduces distortion caused by rDS(on) variation as a function of analog signal amplitude.
GaAs FET Driver
The DG419, as shown in Figure 13 may be used as a GaAs FET driver. It translates a TTL control signal into -8-V, 0-V level outputs to drive the gate.
When the 5-V supply comes back up, the resistor divider senses the presence of at least 3.5 V, and causes a new
D1 VCC (5 V) R1 VSENSE 453 kW Memory
V+ D
SW1
VL S + - V- 3 V Li Cell
DG417
IN
R2 383 kW
GND
Figure 11. Micropower UPS Circuit
+5 V
DG419
S1 S2
R1 R2 VL S1 S2 D VOUT V+ GaAs FET
IN D VIN - VOUT + 5V
DG419
GND V-
-8 V
Figure 12. Programmable Gain Amplifier
Figure 13. GaAs FET Driver
10
Siliconix S-52880--Rev. D, 28-Apr-97

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